BSS123 UMW | Alldatasheet

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Technical content

Mosfet Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.17 A Pulsed Drain Current (tp=10us) IDM 0.68 A Continuous Source-Drain Current(Diode Conduction) IS 0.17 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8 from case for TL 260 ℃ N-Channel 100-V(D-S) MOSFET FEATURE:

  • Rugged and Relaible Small Servo Motor Controls
  • High density cell design for extremely low RDS(on) Power MOSFET Gate Drivers
  • Surface Mount Package Switching Application
  • Voltage Controlled Small Signal Switch UMW R ID = 0.17A (V GS =10V) /G108VDS(V) =100V /G108RDS(ON) 10 (VGS =4.5V) BSS123 /G108R RDS(ON) 6 (VGS =10V) /G108 APPLICATION: /G108 /G108 /G108 SOT–23 1. GATE 2. SOURCE 3. DRAIN www.umw-ic.com 1 UTD Semiconductor Co.,Limited

MOSFET ELECTRICAL CHARACTERISTICS unless otherwise specified Ta = 25 ℃ Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 100 V Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1 2.8 V Gate-body leakage IGSS VDS =0V, VGS =±20V ±50 nA Zero gate voltage drain current IDSS VDS =100V, VGS =0V 1 µA Drain-source on-resistancea RDS(on) VGS =10V, ID = 0.17A 3.8 6 Ω VGS =4.5V, ID =0.17A 3.5 10 Ω Forward transconductancea gfs VDS =10V, ID =170mA 80 mS Diode forward voltage VSD IS=340mA,VGS=0V 0.8 1.3 V Dynamic Characteristics Input capacitance Ciss VDS =25V,VGS =0V, f=1MHz 29 pF Output capacitance Coss 10 pF Reverse transfer capacitanceb Crss 2 pF Switchingb Characteristics Turn-on delay time td(on) VGS=10V, VDD=30V ID =0.28A, RGEN=50Ω 8 ns Rise time tr 8 ns Turn-off delay time td(off) 13 ns Fall time tf 16 ns Total Gate Charge Qg VDS=10V, ID=0.22A, VGS=10V 2 nC Gate-Source Charge Qgs 0.25 nC Gate-Drain Charge Qgd 0.4 nC Note : 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test ; Pulse Width =300µs, Duty Cycle ≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. N-Channel 100-V(D-S) MOSFET UMW R BSS123www.umw-ic.com 2 UTD Semiconductor Co.,Limited

N-Channel 100-V(D-S) MOSFET UMW R BSS123 Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. Marking

Ordering information

Ordercode Package Baseqty Deliverymode UMW BSS123 SOT-23 3000 Tape and reel www.umw-ic.com 3 UTD Semiconductor Co.,Limited