BSS123 DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
/c183Low Gate Threshold Voltage /c183Low Input Capacitance /c183Fast Switching Speed /c183Low Input/Output Leakage /c183High Drain-Source Voltage Rating Maximum Ratings @ TA = 25/c176C unless otherwise specified Characteristic Symbol BSS123 Units Drain-Source Voltage VDSS 100 V Drain-Gate Voltage RGS /c163 20K/c87 VDGR 100 V Gate-Source Voltage Continuous VGSS /c17720 V Drain Current (Note 1) Continuous Pulsed ID IDM 170 680 mA Total Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) R/c113JA 417 /c176C/W Operating and Storage Temperature Range Tj,T STG -55 to +150 /c176C /c183Case: SOT-23, Molded Plastic /c183Case material - UL Flammability Rating 94V-0 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagram /c183Marking: K23 (See Page 3) /c183Ordering & Date Code Information: See Page 3 /c183Weight: 0.008 grams (approx.) Mechanical Data TCUDORPWEN Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 /c97 0/c176 8/c176 All Dimensions in mm A E J L TOP VIEW M B C H G D K D G S Source Gate Drain
DS30366 Rev. 3 - 2 2 of 3 BSS123 www.diodes.com Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BVDSS 100 /c190/c190 V VGS = 0V, ID = 250/c109A Zero Gate Voltage Drain Current IDSS /c190/c190 1.0 µA nA VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V Gate-Body Leakage, Forward IGSSF /c190/c190 50 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 0.8 1.4 2.0 V VDS =V GS, ID = 1mA Static Drain-Source On-Resistance RDS (ON) /c190 /c190 /c190 /c190 6.0 10 /c87 VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A Forward Transconductance gFS 80 370 /c190 mS VDS = 10V, ID = 0.17A, f = 1.0KHz Drain-Source Diode Forward Voltage VSD /c190 0.84 1.3 V VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS Input Capacitance Ciss /c190 29 60 pF VDS = 25V, VGS = 0V f = 1.0MHzOutput Capacitance Coss /c190 10 15 pF Reverse Transfer Capacitance Crss /c190 26 p F SWITCHING CHARACTERISTICS Turn-On Rise Time tr /c190/c190 8n s VDD = 30V, ID = 0.28A, RGEN = 50/c87,V GS = 10V Turn-Off Fall Time tf /c190/c190 16 ns Turn-On Delay Time tD(ON) /c190/c190 8n s Turn-Off Delay Time tD(OFF) /c190/c190 13 ns Electrical Characteristics @ TA = 25/c176C unless otherwise specified Note: 2. Short duration test pulse used to minimize self-heating effect. TCUDORPWEN 0.2 0.7 0 1 3 4 5 I , DRAIN-SOURCE CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 1 On-Region Characteristics V = 4VGS 0.6 0.5 0.1 0.3 0.4 V = 3VGS V = 10, 7, 6, 5VGS 0.8 1.2 1.6 0.1 0.2 R , NORMALIZEDDS(ON) DRAIN-SOURCE ON-RESISTANCE I , DRAIN-SOURCE CURRENT (A)D Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current V= 4 VGS 2.0 2.4 0 . 30 . 4 0 . 50 . 6 V= 3 VGS V = 5, 6, 7, 10VGS
DS30366 Rev. 3 - 2 3 of 3 BSS123 www.diodes.com Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND Year 2002 2003 2004 2005 2006 2007 2008 Code NP RS T UV Date Code Key K23 YM K23 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Marking Information Device Packaging Shipping BSS123-7 SOT-23 3000/Tape & Reel Ordering Information (Note 3) TCUDORPWEN 0.4 0.8 1.2 -50 0 75 100 125 150 R NORMALIZED ON-RESISTANCEDS(ON), T , JUNCTION TEMPERATURE (ºC)J Fig. 4 On-Resistance Variation with Temperature 1.6 1.8 2.2 -25 25 50 0.6 1.4 V = 10VGS I = 1 7 0 mD 0.7 0.8 0.9 -50 0 75 100 125 150 V NORMALIZED THRESHOLD VOLTAGEGS(th), T , JUNCTION TEMPERATURE (ºC)J Fig. 3 Gate Threshold Variation with Temperature 1.1 1.2 -25 25 50 0 5 15 20 25 C, CAPACITANCE (pF) V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 5 T ypical Capacitance