BSR56

BSR56 PHILIPS | Alldatasheet

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Product specification File under Discrete Semiconductors, SC07 April 1991 DISCRETE SEMICONDUCTORS BSR56; BSR57; BSR58 N-channel FETs

Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58

DESCRIPTION

Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. PINNING Note 1. Drain and source are interchangeable. Marking code 1 = drain 2 = source 3 = gate BSR56 = M4P BSR57 = M5P BSR58 = M6P Fig.1 Simplified outline and symbol, SOT23. handbook, halfpage g d s Top view MAM385 QUICK REFERENCE DATA BSR56 BSR57 BSR58 Drain-source voltage ±VDS max. 40 40 40 V Total power dissipation up to Tamb = 40°CP tot max. 250 250 250 mW Drain current VDS = 15 V; VGS =0 IDSS > 50 20 8 mA <− 100 80 mA Gate-source cut-off voltage VDS = 15 V; ID = 0.5 nA −V(P)GS > 4 2 0.8 V < 10 6 4 V Drain-source resistance (on) at f = 1 kHz ID = 0; VGS =0 r ds on < 25 40 60 Ω Feedback capacitance at f = 1 MHz −VGS = 10 V; VDS =0 C rs < 555 p F Turn-off time VDD = 10 V; VGS =0 ID = 20 mA;−VGSM = 10 V t off < 25 −− ns ID = 10 mA;−VGSM =6 V t off <− 50 − ns ID = 5 mA; −VGSM =4 V t off <−− 100 ns

Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Notes 1. Mounted on a ceramic substrate of 8 mm× 10 mm × 0.7 mm. CHARACTERISTICS Tj=2 5°C unless otherwise specified Drain-source voltage ± VDS max. 40 V Drain-gate voltage V DGO max. 40 V Gate-source voltage −VGSO max. 40 V Forward gate current I GF max. 50 mA Total power dissipation up to Tamb =4 0°C (note 1) P tot max. 250 mW Storage temperature range T stg −65 to+150 °C Junction temperature T j max. 150 °C From junction to ambient (note 1) R th j-a = 430 K/W Gate-source cut-off current VDS =0V ; −VGS =2 0V −IGSS max. 1.0 nA Drain cut-off current VDS =1 5V ;−VGS = 10 V I DSX max. 1.0 nA BSR56 BSR57 BSR58 Drain current VDS = 15 V; VGS =0 IDSS > 50 20 8 mA <− 100 80 mA Gate-source breakdown voltage −IG =1 µA; VDS =0 −V(BR)GSS > 40 40 40 V Gate-source cut-off voltage ID = 0,5 nA; VDS = 15 V −V(P)GS > 4 2 0.8 V < 10 6 4 V Drain-source voltage (on) ID = 20 mA; VGS =0 V DSon < 750 −− mV ID = 10 mA; VGS =0 V DSon <− 500 − mV ID = 5 mA; VGS =0 V DSon <− − 400 mV Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0; Ta =2 5°Cr ds on < 25 40 60 Ω Feedback capacitance at f = 1 MHz −VGS = 10 V; VDS =0 C rss < 555 p F

Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 BSR56 BSR57 BSR58 Switching times VDD = 10 V; VGS =0 Conditions ID and −VGSM ID =2 0 1 0 5 m A −VGSM =1 0 6 4 V Delay time t d < 6 6 10 ns Rise time t r < 3 4 10 ns Turn-off time t off < 25 50 100 ns Fig.2 Switching times waveforms. handbook, halfpage MBK299 tr td VGSM Vo Vi 10% 90% 200 ns toff Fig.3 Test circuit. handbook, halfpage MBK298 R T.U.T 50 Ω Vi Vo VDD Pulse generator Oscilloscope BSR56; R = 464 Ω BSR57; R = 953 Ω BSR58; R = 1910 Ω tr =tf≤ 1n s δ = 0.02 Zo =5 0 Ω tr ≤ 0.75 ns R i ≥ 1M Ω C i ≤ 2.5 pF Fig.4 Power derating curve. handbook, halfpage Tamb (°C) Ptot (mW) 300 200 100 40 200 80 120 160 MDA245

Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.