BSR50 FAIRCHILD | Alldatasheet

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©2002 Fairchild Semiconductor Corporation Rev. A, May 2002 BSR50 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted Electrical Characteristics TA=25°C unless otherwise noted Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A TJ, TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage * I C = 10mA, IB = 0 45 V BVCBO Collector-Base Breakdown Voltage I C = 100µA, IB = 0 60 V BVEBO Emitter-Base Breakdown Voltage I E = 100µA, IC = 0 5 V ICBO Collector Cut-off Current V CB = 45V, IE = 0 50 nA IEBO Emitter Cut-off Current V EB = 4.0V, IC = 0 50 nA hFE DC Current Gain V CE = 10V, IC = 150mA VCE = 10V, IC = 0.5A 1,000 2,000 VCE (sat) Collector-Emitter Saturation Voltage I C = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA 1.3 1.6 V VBE (sat) Base-Emitter Saturation Voltage I C = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA 0.9 2.2 V Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W 1. Emitter 2. Collector 3. Base BSR50 NPN Darlington Transistor

  • This device designed for applications requiring extremely high gain at collector currents to 0.5A.
  • Sourced from Process 06. TO-921

0.46 ±0.10 1.27TYP (R2.29) 3.86MAX [1.27 ±0.20] 1.27TYP [1.27 ±0.20] 3.60 ±0.20 14.47 ±0.40 1.02 ±0.10 (0.25) 4.58 ±0.20 4.58+0.25 –0.15 0.38+0.10 –0.05 0.38+0.10 –0.05 TO-92 Package Dimensions BSR50 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, May 2002

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