BSR40 DIODES | Alldatasheet
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ISSUE 3 – FEBRUARY 1996 ✪ COMPLEMENTARY TYPES – BSR40 – BSR30 BSR42 – BSR32 PARTMARKING DETAIL – BSR40 – AR1 BSR42 – AR3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSR40 BSR42 UNIT Collector-Base Voltage VCBO 70 90 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 2A Continuous Collector Current IC 1A Base Current IB 100 mA Power Dissipation at Tamb =25°C Ptot 1W Operating and Storage Temperature Range T j:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base BSR40 Breakdown Voltage BSR42 V(BR)CBO 70 V V I C=100µA IC=100µA Collector-Emitter BSR40 Breakdown Voltage BSR42 V (BR)CEO 60 V V I C=10mA IC=10mA Emitter-Base Breakdown Voltage V (BR)EBO 5V IE=10µA Collector Cut-Off Current I CBO 100 nA µA V CB=60V VCB=60V, Tamb=125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V I C =150mA, IB=15mA IC =500mA, IB=50mA Base-Emitter Saturation Voltage V BE(sat) 1.0 1.2 V V I C =150mA, IB=15mA IC =500mA, IB=50mA Static Forward Current Transfer Ratio h FE 10 120 I C =100µA, VCE=5V IC =100mA, VCE=5V IC =500mA, VCE=5V Collector Capacitance C c 12 pF V CB =10V, f =1MHz Emitter Capacitence C e 90 pF V EB =0.5V, f=1MHz Transition Frequency f T 100 MHz I C=50mA, VCE=10V f =35MHz Turn-On Time T on 250 ns V CC =20V, IC =100mA IB1 =-IB2 =-5mATurn-Off Time T off 1000 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. BSR40 BSR42 C C B E 3 - 67 Not Recommended for New Design Please Use FMMT491