BSR33 DGNJDZ | Alldatasheet
Document overview
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Technical content
- COLLECTOR 3. EMITTER BSR33 TRANSI STOR (PNP)
FEATURES
MARKING:BR4 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified) Pa rameter Symbol T est conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC= -100µA,IE= 0 -90 V Co llector-emitter breakdown voltage V(B R)CEO IC=-1 mA,IB= 0 -80 V Emitter-b ase breakdown voltage V( BR)EBO IE= -100µA,IC=0 -5 V Co llector cut-off current ICB O V CB= -60V,IE= 0 -100 nA Emitter cut-off current IEBO V EB=-5 V,IC= 0 -100 nA hFE(1)* V CE=-5 V, IC= 0.1mA 30 hFE(2)* V CE=-5 V, IC= -100mA 100 300DC cu rrent gain hFE(3)* V CE=-5 V, IC= -500mA 50 IC= -150mA,IB= -15mA -0.25 V Co llector-emitter saturation voltage VCE (sat)* IC= -500mA,IB= -50mA -0.5 V IC= -150mA,IB= -15mA -1 V Bas e-emitter saturation voltage VBE( sat)* IC= -500mA,IB= -50mA -1.2 V T ransition frequency fT V CE= -10V,IC= -50mA, f=100MHz 100 MHz *Pulse test Symbol Para meter Value Unit VCBO Coll ector-Base Voltage -90 V VCE O Coll ector-Emitter Voltage -80 V VEB O Emitter-Base V o ltage -5 V IC Coll ector Current -1 A PC Coll ector Power Dissipation 500 mW RθJA T hermal Resistance From Junction To Ambient 250 ℃/W Operation Junction and Storage Temperature Range ℃TJ,Tstg -55~ +150 BR4 SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com
-1 - 10 -100 -1000 -200 -400 -600 -800 -1000 0 25 50 75 100 125 150 100 200 300 400 500 600 -1 -10 -1 00 -1000 -10 -100 -1000 -1 - 10 -100 -1000 100 1000 -0.1 -1 -1 100 1000 -200 - 400 -600 -800 -1000 -0.1 -10 -100 -1000 -0 -1 -50 -100 -150 -200 β=10 ICVBE sat —— BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECT OR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 ICVCE sat —— COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURREMT IC (mA) IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMM ON EMITTER VCE= -5V -30 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— Cob Cib REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) COLLECTOR CURRENT IC (mA) BASE-EM MITER VOLTAGE VBE (mV) IC —— V BE T a=25℃ T a=100℃ COMM ON EMITTER VCE=-5V St atic Characteristic CO MMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -1mA -0.9 mA -0.8 mA -0.7 mA -0.6 mA -0.5 mA -0.2 mA -0.3 mA -0.4 mA IB=-0.1m A Ty pical Characteristics Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com