BSR18A KEXIN | Alldatasheet
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Low current (max. 100 mA). Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -40 V Collector-emitter voltage V CEO -40 V Emitter-base voltage V EBO -6 V Collector current (DC) I C -100 mA Peak collector current I CM -200 mA Peak base current I BM -100 mA Total power dissipation P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature Tj1 5 0 Operating ambient temperature T amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th(j-a) 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 unless otherwise specified. Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO IE =0A ;V CB = -30 V -50 nA Emitter cutoff current I EBO IC =0A ;V EB =- 6V - 5 0 n A VCE =- 1V ; IC =- 0 . 1m A 6 0 VCE =- 1V ; IC =- 1m A 8 0 VCE =- 1V ;IC = -10 mA 100 300 VCE =- 1V ; IC = -50 mA 60 VCE =- 1V ; IC =- 1 0 0m A 3 0 IC =- 1 0m A ;IB =- 1m A - 2 0 0 m V IC =- 5 0m A ;IB =- 5m A - 2 0 0 m V IC =- 1 0m A ;IB = -1 mA -650 -850 mV IC =- 5 0m A ;IB =- 5m A - 9 5 0 m V Collector capacitance C c IE =i e=0A ;V CB =- 5V ;f=1M H z 4 . 5 p F Emitter capacitance C e IC =i c=0A ;V EB = -500 mV; f = 1 MHz 10 pF Transition frequency f T IC =- 1 0m A ;VCE = -20 V; f = 100 MHz 250 MHz Noise figure NF IC =- 1 0 0ì A ;VCE =- 5V ;RS =1k Ù ; f= 10 Hz to 15.7 kHz 4d B Turn-on time t on 65 ns Delay time t d 35 ns Rise time t r 35 ns Turn-off time t off 300 ns Storage time t s 225 ns Fall time t f 75 ns * Pulse test: tp 300 ìs; d 0.02. DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * VCEsat VBEsat ICon =- 1 0m A ;IBon =- 1m A ;IBoff =1m A hFE BSR18A Marking Marking T92