BSR18A

BSR18A FAIRCHILD | Alldatasheet

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PNP General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted This device is designed as a general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units *BSR18A PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 °C/W C E BSOT-23 Mark: T92 *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  1997 Fairchild Semiconductor Corporation NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. BSR18A

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 µA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 mA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current V CB = 30 V 50 nA IEBO Emitter-Cutoff Current V EB = 3.0 V, IC = 0 50 nA ON CHARACTERISTICS* hFE DC Current Gain I C = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.25 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Transition Frequency I C = 10 mA, VCE = 20, f = 100 MHz

250 MHz

C cb Collector-Base Capacitance V CB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF C eb Emitter-Base Capacitance V EB = 0.5 V, IC = 0, f = 100 kHz 10 pF hie Input Impedance V CE = 10 V,IC = 1.0 mA,f=1.0 kHz 2.0 12 kΩ hfe Small-Signal Current Gain V CE = 10 V,IC = 1.0 mA,f=1.0 kHz 100 400 hoe Output Admittance V CE = 10 V,IC = 1.0 mA,f=1.0 kHz 3.0 60 µS SWITCHING CHARACTERISTICS td Delay Time I C = 10 mA, IB1 = 1.0 mA, 35 ns tr Rise Time V EB = 0.5 V 35 ns ts Storage Time IC = 10 mA, IBon = IBoff = 1.0 mA 275 ns tf Fall Time 75 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 0.01% Spice Model Xtf=6 Rb=10) PNP General Purpose Amplifier (continued) NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C obo C ibo Typical Pulsed Current Gain vs Collector Current 0.1 0.2 0.5 1 2 5 10 20 50 1 00 10 0 15 0 20 0 25 0 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 1.0VCE Collector-Em itt er Sa turation Voltage vs Collect or Curre nt 11 0 1 0 0 2 0 0 0. 05 0.1 0. 15 0.2 0. 25 0.3 I - COLLECTOR CU RR EN T (mA ) V - C OLLECTOR EMIT TER VOLT AGE (V)C CE SAT 25 °C - 40 °C 125°C β = 10 Base-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 2 0 0 0.2 0.4 0.6 0.8 I - COLLECTOR CU RR EN T (mA ) V - BASE EMIT TER VOLT AGE (V) C BE SAT β = 10 25 °C - 40 °C 125 °C Bas e E mitter O N Voltage vs Collector Current 0 .1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CU RR EN T (mA ) V - BA SE EMITTER ON VOLT AGE (V) C BE( ON) V = 1 VCE 25 °C - 40 °C 125 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 1 00 1 25 0. 01 0.1 10 0 T - A MBI E NT TEMP ER ATUR E ( C) I - C OLLE CTOR CU RR EN T (nA) A CBO V = 25VCB BSR18A PNP General Purpose Amplifier (continued)

TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o SOT-23 Typical Characteristics (continued) PNP General Purpose Amplifier (continued) Noise Figure vs Frequency 0.1 1 10 100 f - FREQUENCY (kHz) NF - NOISE FIGURE (dB) I = 100 µA, R = 200ΩC V = 5.0VCE S I = 100 µA, R = 2.0 kΩC S I = 1.0 mA, R = 200ΩC S Noise Figure vs Source Resistance 0.1 1 10 100 R - SOURCE RESISTANCE ( ) NF - NOISE FIGURE (dB) kΩ I = 100 µAC V = 5.0V f = 1.0 kHz CE I = 1.0 mAC S Switching Times vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = tr t s C Ic t f td Turn On and Turn Off Times vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = t off B1 B2 Ic t on V = 0.5VBE(OFF) t I = on t off Ic

Typical Characteristics (continued) Input Impedance 0.1 1 10 0.1 I - COLLECTOR CURRENT (mA) h - INPUT IMPEDANCE (k ) V = 10 VCE C ie f = 1.0 kHzΩ Output Admittance 0.1 1 10 100 1000 I - COLLECTOR CURRENT (mA) h - OUTPUT ADMITTANCE ( mhos) V = 10 VCE C oe f = 1.0 kHz µ Current Gain 0.1 1 10 100 200 500 1000 I - COLLECTOR CURRENT (mA) h - CURRENT GAIN V = 10 VCE C fe f = 1.0 kHz Voltage Feedback Ratio 0.1 1 10 100 I - COLLECTOR CURRENT (mA) h - VOLTAGE FEEDBACK RATIO (x10 ) C re BSR18A PNP General Purpose Amplifier (continued)

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™