BSR18A

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Technical content

BSR18A — PNP General-Purpose Amplifier © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BSR18A Rev. 1.1.0 1 March 2014 BSR18A PNP General-Purpose Amplifier

Ordering Information

Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Part Number Marking Package Packing Method BSR18A T92 SOT-23 3L Tape and Reel Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current - Continuous -200 mA TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C SOT-23 Mark: T92 C B E

Description

This device is designed as a general-purpose ampli- fier for switching applications at collector currents of 10 μA to 100 mA. Sourced from process 66.

BSR18A — PNP General-Purpose Amplifier © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BSR18A Rev. 1.1.0 2 Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Note: 3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted. Note: 4. Pulse test: pulse width † 300 μs, duty cycle †0.01%. Symbol Parameter Max. Unit PD Total Device Dissipation 350 mW Derate Above TA = 25°C 2.8 mW/°C RθJA Thermal Resistance, Junction to Ambient 357 °C/W Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown Voltage I C = -10 μA, IB = 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage I C = -1.0 mA, IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage I E = -10 μA, IC = 0 -5.0 V ICBO Collector Cut-Off Current V CB = -30 V, IE = 0 -50 nA IEBO Emitter Cut-Off Current V EB = -3.0 V, IC = 0 -50 nA hFE DC Current Gain(4) IC = -0.1 mA, VCE = -1.0 V 60 IC = -1.0 mA, VCE = -1.0 V 80 IC = -10 mA, VCE = -1.0 V 100 300 IC = -50 mA, VCE = -1.0 V 60 IC = -100 mA, VCE = -1.0 V 30 VCE(sat) Collector-Emitter Saturation Voltage(4) IC = -10 mA, IB = -1.0 mA -0.25 V IC = -50 mA, IB = -5.0 mA -0.40 VBE(sat) Base-Emitter Saturation Voltage (4) IC = -10 mA, IB = -1.0 mA -0.65 -0.85 V IC = -50 mA, IB = -5.0 mA -0.95 fT Transition Frequency IC = -10 mA, VCE = -20 V, f = 100 MHz 250 MHz Ccb Collector-Base Capacitance VCB = -5.0 V, IE = 0, f = 100 kHz 4.5 pF Ceb Emitter-Base Capacitance VEB = -0.5 V, IC = 0, f = 100 kHz 10 pF hie Input Impedance VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 21 2 k Ω hie Small-Signal Current Gain VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 100 400 hie Output Admittance VCE = -10 V, IC = -1.0 mA, f = 1.0 kHz 36 0 μS td Delay Time IC = -10 mA, IB1 = -1.0 mA, VEB = -0.5 V 35 ns tr Rise Time 35 ns ts Storage Time IC = -10 mA, IBon = IBoff = -1.0 mA 275 ns tf Fall Time 75 ns

Figure 16. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) warranty therein, which covers Fairchild products. http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. MOLD FLASH AND TIE BAR EXTRUSIONS.

1.20 MAX

0.20 A B

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