BSR17A KEXIN | Alldatasheet
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High current (max. 100 mA). Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 6V Collector current I C 100 mA Peak collector current I CM 200 mA Peak base current I BM 100 mA Total power dissipation P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors BSR17A Marking Marking U92 OR 54 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0A ;V CB = 30 V 50 nA IE =0A ;V CB =3 0V ;Tj = 150 5ì A Emitter cutoff current I EBO IC =0A ;V EB =6V 5 0 n A DC current gain * h FE IC =1 0m AVCE = 1 V; 100 300 IC =1 0m A ;IB = 1 mA; 200 mV IC =5 0m A ;IB = 5 mA; 200 mV IC =1 0m A ;IB = 1 mA; 650 850 mV IC =5 0m A ;IB = 5 mA; 950 mV Collector capacitance C c IE =i e=0A ;V CB =5V ;f=1M H z 4 p F Emitter capacitance C e IC =i c=0A ;V EB = 500 mV; f = 1 MHz 8 pF Transition frequency f T IC =1 0m A ;VCE = 20 V; f = 100 MHz 300 MHz Noise figure NF IC = 100 ìA; VCE =5V ;R S =1k Ù ; f=1 0 Hz to 15.7 kHz 5d B Turn-on time t on 65 ns Delay time t d 35 ns Rise time t r 35 ns Turn-off time t off 240 ns Storage time t s 200 ns Fall time t f 50 ns * Pulse test: tp 300 ìs; d 0.02. VCEsat ICon =1 0m A ;IBon =1m A ;IBoff =- 1m A VBEsat Collector cutoff current I CBO collector-emitter saturation voltage * base-emitter saturation voltage *