BSR17A

BSR17A DIOTEC | Alldatasheet

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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 10 01.11.2003 BSR 17A Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSR 17A Collector-Emitter-voltage B open V CE0 40 V Collector-Base-voltage E open V CB0 60 V Emitter-Base-voltage C open V EB0 6 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 200 mA Peak Base current – Basis-Spitzenstrom I BM 100 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V I CB0 – – 50 nA IE = 0, VCB = 30 V, Tj = 150/g47CI CB0 –– 5 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 6 V I EB0 – – 30 nA Collector saturation volt. – Kollektor-Sättigungsspg. 1) IC = 10 mA, IB = 1 mA V CEsat – – 200 mV IC = 50 mA, IB = 5 mA V CEsat – – 200 mV 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 1101.11.2003 Switching Transistors BSR 17A Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 1 mA V BEsat 650 mV – 850 mV IC = 50 mA, IB = 5 mA V BEsat – – 950 mV DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 1 V, IC = 0.1 mA h FE 60 – – VCE = 1 V, IC = 1 mA h FE 80 – – VCE = 1 V, IC = 10 mA h FE 100 – 300 VCE = 1 V, IC = 50 mA h FE 60 – – VCE = 1 V, IC = 100 mA h FE 30 – – Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz f T 300 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz C CB0 – 4 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 8 pF – Noise figure – Rauschzahl VCE = 5 V, IC = 100 /g58A, RS = 1 k/g83, f = 10 Hz...15.7 kHz F – – 5 dB Switching times – Schaltzeiten turn-on time ICon = 10 mA IBon = 1 mA - IBoff = 1 mA ton – – 65 ns delay time t d – – 35 ns rise time t r – – 35 ns turn-off time t off – – 240 ns storage time t s – – 200 ns fall time t f – – 50 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BSR 18A Marking - Stempelung BSR 17A = U92