BSR15 KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
High current (max. 600 mA). Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -60 V Collector-emitter voltage V CEO -40 V Emitter-base voltage V EBO -5 V Collector current I C -600 mA Peak collector current I CM -800 mA Peak base current I BM -200 mA Total power dissipation P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = -50 V -20 nA IE =0 ;VCB =- 5 0V ;Tj = 150 -20 ìA Emitter cutoff current I EBO IC =0 ;VEB =- 5V - 5 0 n A IC =- 0 . 1m A ;VCE =- 1 0V 3 5 IC =- 1m A ;VCE =- 1 0V 5 0 IC =- 1 0m A ;VCE =- 1 0V 7 5 IC = -150 mA; VCE = -10 V* 100 300 IC = -500 mA; VCE =- 1 0V ;* 3 0 IC = -150 mA; IB = -15 mA -400 mV IC = -500 mA; IB =- 5 0m A - 1 . 6 V IC = -150 mA; IB =- 1 5m A - 1 . 3 V IC = -500 mA; IB =- 5 0m A - 2 . 6 V Collector capacitance C c IE =i e=0 ;VCB =- 1 0V ;f=1M H z 8 p F Emitter capacitance C e IC =i c=0 ;VEB =- 2V ;f=1M H z 3 0 Transition frequency f T IC =- 5 0m A ;VCE = -20 V; f = 100 MHz 200 MHz Turn-on time t on 40 ns Delay time t d 12 ns Rise time t r 30 ns Turn-off time t off 365 ns Storage time t s 300 ns Fall time t f 65 ns * Pulse test: tp 300 ìs; d 0.02. Collector cutoff current collector-emitter saturation voltage base-emitter saturation voltage hFEDC current gain VCEsat ICon =- 1 5 0m A ;IBon =- 1 5m A ; IBoff =1 5m A(s e eF i g) VBEsat ICBO BSR15 Marking Marking T7