BSR15

BSR15 DIOTEC | Alldatasheet

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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 8 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 BSR 15, BSR 16 Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSR 15 BSR 16 Collector-Emitter-voltage B open - V CE0 40 V 60 V Collector-Base-voltage E open - V CB0 60 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) - I C 600 mA Peak Collector current – Kollektor-Spitzenstrom - I CM 800 mA Peak Base current – Basis-Spitzenstrom - I BM 200 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 50 V BSR 15 - ICB0 – – 20 nA IE = 0, - VCB = 50 V, Tj = 150/g47C- I CB0 – – 20 /g58A IE = 0, - VCB = 60 V BSR 16 - ICB0 – – 10 nA IE = 0, - VCB = 60 V, Tj = 150/g47C- I CB0 – – 10 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - I EB0 – – 50 nA

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 901.11.2003 Switching Transistors BSR 15, BSR 16 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 10 V, - IC = 0.1 mA BSR 15 h FE 35 – – BSR 16 h FE 75 – – - VCE = 10 V, - IC = 1 mA BSR 15 h FE 50 – – BSR 16 h FE 100 – – - VCE = 10 V, - IC = 10 mA BSR 15 h FE 75 – – BSR 16 h FE 100 – – - VCE = 10 V, - IC = 500 mA BSR 15 h FE 30 – – BSR 16 h FE 50 – – - VCE = 10 V, - IC = 150 mA h FE 100 – 300 Collector saturation volt. – Kollektor-Sättigungsspg. 1) - IC = 150 mA, - IB = 15 mA - V CEsat – – 400 mV - IC = 500 mA, - IB = 50 mA - V CEsat – – 1.6 V Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 150 mA, - IB = 15 mA - V BEsat – – 1.3 V - IC = 500 mA, - IB = 50 mA - V BEsat – – 2.6 V Gain-Bandwidth Product – Transitfrequenz - VCE = 20 V, - IC = 20 mA, f = 100 MHz f T 200 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 8 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 2 V, IC = ic = 0, f = 1 MHz C EB0 – 30 pF – Switching times – Schaltzeiten turn-on time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA ton – – 40 ns delay time t d – – 12 ns rise time t r – – 30 ns turn-off time t off – – 365 ns storage time t s – – 300 ns fall time t f – – 65 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BSR 13, BSR 14 Marking - Stempelung BSR 15 = T7 BSR 16 = T8