BSR14

BSR13 DIOTEC | Alldatasheet

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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 6 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 BSR 13, BSR 14 Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSR 13 BSR 14 Collector-Emitter-voltage B open V CE0 30 V 40 V Collector-Base-voltage E open V CB0 60 V 75 V Emitter-Base-voltage C open V EB0 5 V 6 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 800 mA Peak Collector current – Kollektor-Spitzenstrom I CM 800 mA Peak Base current – Basis-Spitzenstrom I BM 200 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 50 V BSR 13 ICB0 – – 30 nA IE = 0, VCB = 50 V, Tj = 150/g47CI CB0 – – 10 /g58A IE = 0, VCB = 60 V BSR 14 ICB0 – – 10 nA IE = 0, VCB = 60 V, Tj = 150/g47CI CB0 – – 10 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V BSR 13 I EB0 – – 30 nA BSR 14 I EB0 – – 10 nA

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 701.11.2003 Switching Transistors BSR 13, BSR 14 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 10 V, IC = 0.1 mA BSR 13 BSR 14 hFE 35 – – VCE = 10 V, IC = 1 mA h FE 50 – – VCE = 10 V, IC = 10 mA h FE 75 – – VCE = 10 V, IC = 150 mA h FE 100 – 300 VCE = 1 V, IC = 150 mA h FE 50 – – VCE = 10 V, IC = 500 mA BSR 13 h FE 30 – – BSR 14 h FE 40 – – Collector saturation volt. – Kollektor-Sättigungsspg. 1) IC = 150 mA, IB = 15 mA BSR 13 V CEsat – – 400 mV BSR 14 V CEsat – – 300 mV IC = 500 mA, IB = 50 mA BSR 13 V CEsat – – 1.6 V BSR 14 V CEsat – – 1 V Base saturation voltage – Basis-Sättigungsspannung 1) IC = 150 mA, IB = 15 mA BSR 13 V BEsat – – 1.3 V BSR 14 V BEsat 0.6 V – 1.2 V IC = 500 mA, IB = 50 mA BSR 13 V BEsat – – 2.6 V BSR 14 V BEsat – – 2 V Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz BSR 13 f T 250 MHz – – BSR 14 f T 300 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 8 pF – Switching times – Schaltzeiten turn-on time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA ton – – 35 ns delay time t d – – 15 ns rise time t r – – 20 ns turn-off time t off – – 250 ns storage time t s – – 200 ns fall time t f – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 2) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BSR 15, BSR 16 Marking - Stempelung BSR 13 = U7 BSR 14 = U8