BSR13 KEXIN | Alldatasheet

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High current (max. 800 mA). Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol BSR13 BSR14 Unit Collector-base voltage V CBO 60 75 V Collector-emitter voltage V CEO 30 40 V Emitter-base voltage V EBO 56 V Collector current I C mA Peak collector current I CM mA Peak base current I BM mA Total power dissipation P tot mW Storage temperature T stg Junction temperature T j Operating ambient temperature R amb Thermal resistance from junction to ambient * R th j-a K/W * Transistor mounted on an FR4 printed-circuit board. 800 800 200 250 - 6 5t o+ 1 5 0 150 - 6 5t o+ 1 5 0 500

www.kexin.com.cn2 SMD Type ICSMD Type Transistors BSR13,BSR14 hFE Classification TYPE BSR13 BSR14 Marking U7 U8 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = 50 V 30 nA IE =0 ;VCB =5 0V ;Tj = 150 10 ìA IE =0 ;VCB = 60 V 10 nA IE =0 ;VCB =6 0V ;Tj = 150 10 ìA BSR13 30 nA BSR14 10 nA IC =0 . 1m A ;VCE =1 0V ; 3 5 IC =1m A ;VCE =1 0V ; 5 0 IC =1 0m A ;VCE =1 0V ; 7 5 IC = 150 mA; VCE = 10 V 100 300 IC = 150 mA; VCE =1V ; 5 0 BSR13 30 BSR14 40 BSR13 400 mV BSR14 300 mV BSR13 1.6 V BSR14 1V BSR13 1.3 V BSR14 0.6 1.2 V BSR13 2.6 V BSR14 2V Collector capacitance C c IE =I e=0 ;VCB =1 0V ;f=1M H z 8 p F BSR13 250 MHz BSR14 300 MHz Turn-on time t on 35 ns Delay time t d 15 ns Rise time t r 20 ns Turn-off time t off 250 ns Storage time t s 200 ns Fall time t f 60 ns * Pulse test: tp 300 ìs; d 0.02. base-emitter saturation voltage base-emitter saturation voltage Transition frequency collector-emitter saturation voltage collector-emitter saturation voltage Collector cutoff current BSR13 BSR14 Emitter cutoff current DC current gain * I C = 500 mA; VCE =1 0V ;hFE hFEDC current gain * ICBO ICBO IEBO IC =0 ;VEB =5V IC = 150 mA; IB =1 5m A IC = 500 mA; IB =5 0m A VCEsat VCEsat fT IC =2 0m A ;VCE =2 0V ; f=1 0 0M H z ICon =1 5 0m A ;IBon =1 5m A ; IBoff =- 1 5m A VBEsat VBEsat IC = 150 mA; IB =1 5m A IC = 500 mA; IB =5 0m A