BSP75N

Online Datasheet

Read BSP75N online.

Document overview

Manufacturer or author: Diodes Incorporated
PDF pages: 9

Technical content

Document number: DS33016 Rev. 7 - 2 1 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N 60V SELF-PROTECTED LOW-SIDE IntelliFET MOSFET SWITCH Product Summary  Continuous Drain-Source Voltage: VDS = 60V  On-State Resistance: 500mΩ  Max Nominal Load Current (VIN = 5V): 1.1A  Min Nominal Load Current (VIN = 5V): 0.7A  Clamping Energy: 550mJ

Description

The BSP75N is a self-protected, low-side IntelliFET® MOSFET. It features monolithic overtemperature, overcurrent, overvoltage (active clamp), and ESD protected logic-level functionality. It is intended as a general-purpose switch.

Applications

 Especially suited for loads with high inrush current, such as lamps and motors  All types of resistive, inductive, and capacitive loads in switching  µC compatible power switches for 12V and 24V DC applications  Replaces electromechanical relays and discrete circuits  Linear mode capabilities—current-limiting protection circuitry is designed to deactivate at low VDS to not compromise the load current during normal operation. Maximum DC operating current is therefore determined by thermal capability of the package/board combination rather than by protection circuitry, which does not compromise the product’s ability to self-protect at low VDS. Features and Benefits  Short-Circuit Protection with Auto Restart  Overvoltage Protection (Active Clamp)  Thermal Shutdown with Auto Restart  Overcurrent Protection  Input Protection (ESD)  Load-Dump Protection (Actively Protects Load)  Logic-Level Input  High Continuous Current Rating  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  An automotive-compliant part is available under separate datasheet (BSP75NQ) Mechanical Data  Package: SOT223  Package Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish  Weight: 0.112 grams (Approximate) Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. Ordering Information (Note 4) Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier BSP75NTA SOT223 (Type DN) BSP75N 7 12 1000 Units Reel BSP75NTC SOT223 (Type DN) BSP75N 13 12 4000 Units Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Top View SOT223 (Type DN) Top View Pin Out

Document number: DS33016 Rev. 7 - 2 2 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N Marking Information Functional Block Diagram Overvoltage Protection Overtemperature Protection Human Body ESD Protection Overcurrent Protection Logic dv/dt Limitation BSP75N = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 4 = 2024) WW or WW = Week Code (01 to 53)

Document number: DS33016 Rev. 7 - 2 3 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Symbol Limit Unit Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for Short-Circuit Protection VIN = 5V VDS(SC) 36 V Drain-Source Voltage for Short-Circuit Protection VIN = 10V VDS(SC) 20 V Continuous Input Voltage VIN -0.2 to 10 V Peak Input Voltage VIN -0.2 to 20 V Operating Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Power Dissipation at TA = +25°C (Note 5) PD 1.5 W Power Dissipation at TA = +25°C (Note 6) PD 0.6 W Continuous Drain Current @ VIN = 10V, TA = +25°C (Note 5) ID 1.3 A Continuous Drain Current @ VIN = 5V, TA = +25°C (Note 5) ID 1.1 A Continuous Drain Current @ VIN = 5V, TA = +25°C (Note 6) ID 0.7 A Continuous Source Current (Body Diode) (Note 5) IS 2.0 A Pulsed Source Current (Body Diode) (Note 7) IS 3.3 A Unclamped Single Pulse Inductive Energy EAS 550 mJ Load Dump Protection VLOAD_DUMP 80 V Electrostatic Discharge (Human Body Model) VESD 4000 V DIN Humidity Category, DIN 40 040 — E — IEC Climatic Category, DIN IEC 68-1 — 40/150/56 — Thermal Resistance Parameter Symbol Limit Unit Junction to Ambient (Note 5) RθJA 83 C/W Junction to Ambient (Note 7) RθJA 45 C/W Junction to Ambient (Note 6) RθJA 208 C/W Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 board with a high coverage of single-sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated. 6. For a device surface-mounted on FR-4 board with the minimum copper required for electrical connections. 7. For a device surface-mounted on FR-4 board as (a) and measured at t ≤ 10s.

Document number: DS33016 Rev. 7 - 2 4 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Conditions Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 70 75 V ID = 10mA Off-State Drain Current IDSS — 0.1 3 µA VDS = 12V, VIN = 0V Off-State Drain Current IDSS — 3 15 µA VDS = 32V, VIN = 0V Input Threshold Voltage (Note 8) VIN(TH) 1 2.1 — V VDS = VGS, ID = 1mA Input Current IIN — 0.7 1.2 mA VIN = 5V Input Current IIN — 1.5 2.7 mA VIN = 7V Input Current IIN — 4 7 mA VIN = 10V Static Drain-Source On-State Resistance RDS(ON) — 520 675 mΩ VIN = 5V, ID = 0.7A Static Drain-Source On-State Resistance RDS(ON) — 385 550 mΩ VIN = 10V, ID = 0.7A Current Limit (Note 9) ID(LIM) 0.7 1.0 1.5 A VIN = 5V, VDS > 5V Current Limit (Note 9) ID(LIM) 1 1.8 2.3 A VIN = 10V, VDS > 5V Dynamic Characteristics Turn-On Time (VIN to 90% ID) tON — 3 — μs RL = 22Ω, VIN = 0V to 10V VDD = 12V Turn-Off Time (VIN to 90% ID) tOFF — 13 — μs RL = 22Ω, VIN = 10V to 0V VDD = 12V Slew Rate On (70% to 50% VDD) -dvDS/dtON — 8 — V/μs RL = 22Ω, VIN = 0V to 10V VDD = 12V Slew Rate Off (50% to 70% VDD) dvDS/dtON — 3.2 — V/μs RL = 22Ω, VIN = 10V to 0V VDD = 12V Protection Functions (Note 10) Minimum Input Voltage for Overtemperature Protection VPROT 4.5 — — V — Thermal Overload Trip Temperature TJT +150 +175 — °C — Thermal Hysteresis — — +1 — °C — Unclamped Single Pulse Inductive Energy TJ = +25°C EAS 550 — — mJ ID(ISO) = 0.7A, VDD = 32V Unclamped Single Pulse Inductive Energy TJ = +150°C EAS 200 — — mJ ID(ISO) = 0.7A, VDD = 32V Inverse Diode Source Drain Voltage VSD — — 1 V VIN = 0V, -ID = 1.4A Notes: 8. Protection features may operate outside spec for VIN < 4.5V. 9. The drain current is limited to a reduced value when V DS exceeds a safe level. 10. Integrated protection functions are designed to prevent I C destruction under fault conditions described in the datasheet. Fault conditions are considered as ”outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.

Application Information

The current-limit protection circuitry is designed to deactivate at low V DS to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination rather than by the protection circuitry (see Typical Characteristics graphs). This does not compromise the products ability to self-protect at low VDS. The overtemperature protection circuit trips at a minimum of +150°C, so the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents. Minimum Copper Area Characteristics For minimum copper condition as described in Note 6. Max Ambient Temperature TA Maximum Continuous Current VIN = 5V VIN = 10V +25°C 720mA 840mA +70°C 575mA 670mA +85°C 520mA 605mA +125°C 320mA 375mA TA = 25°C TA=25°C TA = 25°C See Note 6 RDS(ON) Limited

Document number: DS33016 Rev. 7 - 2 6 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N Large Copper Area Characteristics For large copper area as described in Note 5. Max Ambient Temperature TA Maximum Continuous Current VIN = 5V VIN = 10V +25°C 1140mA 1325mA +70°C 915mA 1060mA +85°C 825mA 955mA +125°C 510mA 590mA TA = 25°C TA = 25°C TA = 25°C See Note 5 RDS(ON) Limited

Document number: DS33016 Rev. 7 - 2 8 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) SOT223 (Type DN) Dim Min Max Typ A -- 1.70 -- A1 0.01 0.15 -- A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -- c 0.20 0.32 -- D 6.30 6.70 -- E 6.70 7.30 -- E1 3.30 3.70 -- e -- -- 2.30 e1 -- -- 4.60 L 0.85 -- -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 A1A D b e C E L 0.25 Seating Plane Gauge Plane Y X C C1 Y2

Document number: DS33016 Rev. 7 - 2 9 of 9 www.diodes.com January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. BSP75N IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate th e operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically tr ained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the ri sks associated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all dam ages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or fore ign trademarks and trademark applicati ons. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in r espect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and ( b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. D iodes does not warrant that information contained in this document is error -free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2024 Diodes Incorporated. All Rights Reserved. www.diodes.com

Product Information

BSP75N specifications and overview.

Summary

60V SELF-PROTECTED LOW-SIDE IntelliFET MOSFET SWITCH June 2022 Rev. 6 - 2

Description

60V SELF-PROTECTED LOW-SIDE IntelliFET MOSFET SWITCH June 2022 Rev. 6 - 2

Source title BSP75N Datasheet(PDF) - Diodes Incorporated

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