BSP75G DIODES | Alldatasheet
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Document number: DS33015 Rev. 5 - 2 1 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Continuous Drain Source Voltage: VDS = 60V On-State Resistance: 550mΩ Nominal Load Current (VIN = 5V) : 1.4A Clamping Energy: 550mJ
Description
The BSP75G is a self-protected low -side MOSFET . It features monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. It is intended as a general purpose switch.
Applications
Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications μC Compatible Power Switch for 12V and 24V DC Applications Automotive Rated Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability - the current-limiting protection circuitry is designed to de-activate at low VDS to in order not to compromise the load current during normal operation . The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. Features and Benefits Short Circuit Protection with Auto Restart Over Voltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Over-Current Protection Input Protection (ESD) Load Dump Protection (Actively Protects Load) Logic Level Input High Continuous Current Rating Lead-Free Finish; RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An Automotive-Compliant Part is Available Under Separate Datasheet (BSP75GQ) Mechanical Data Case: SOT223 (Type DN) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) Note: The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copp er to the tab is recommended for best thermal performance. Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BSP75GTA BSP75G 7 12 1,000 Units BSP75GTC BSP75G 13 12 4,000 Units Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Top View SOT223 (Type DN) Top View Pin Out IntelliFET is a trademark of Diodes Incorporated.
Document number: DS33015 Rev. 5 - 2 2 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION Marking Information Functional Block Diagram Over Voltage Protection Over Temperature Protection Human Body ESD Protection Over Current Protection Logic dV/dt Limitation (01 to 53)
Document number: DS33015 Rev. 5 - 2 3 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION Absolute Maximum Ratings (@TA = +25°C, unless otherwise stated.) Parameter Symbol Limit Unit Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for Short Circuit Protection VIN = 5V VDS(SC) 36 V Continuous Input Voltage VIN -0.2 to +10 V Peak Input Voltage VIN -0.2 to +20 V Operating Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Power Dissipation at TA = +25°C (Note 5) PD 2.5 W Continuous Drain Current @ VIN =10V; TA = +25°C (Note 5) ID 1.6 A Continuous Drain Current @ VIN =5V; TA = +25°C (Note 5) ID 1.4 A Pulsed Drain Current @ VIN = 10V IDM 5 A Continuous Source Current (Body Diode) (Note 5) IS 3 A Pulsed Source Current (Body Diode) IS 5 A Unclamped Single Pulse Inductive Energy EAS 550 mJ Load Dump Protection VLOAD_DUMP 80 V Electrostatic Discharge (Human Body Model) VESD 4000 V DIN Humidity Category, DIN 40 040 — E — IEC Climatic Category, DIN IEC 68-1 — 40/150/56 — Thermal Resistance Characteristic Symbol Limit Unit Junction to Ambient (Note 5) RθJA 50 °C/W Junction to Ambient (Note 6) RθJA 24 °C/W Junction to Ambient (Note 7) RθJA 208 °C/W Notes: 5. For a device surface mounted on 37mm x 37mm x 1.6mm FR -4 board with a high coverage of single sided 2oz weight copper. 6. For a device surface mounted on FR-4 board and measured at t<=10s. 7. For a device mounted on FR-4 board with the minimum copper required for electrical connections .
Document number: DS33015 Rev. 5 - 2 4 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION Typical Characteristics TA = 25°C TA = 25°C TA = 25°C
Document number: DS33015 Rev. 5 - 2 5 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise stated.) Parameter Symbol Min. Typ. Max. Unit Conditions Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 70 75 V ID=10mA Off state Drain Current IDSS — 0.1 3 μA VDS=12V, VIN=0V Off state Drain Current IDSS — 3 15 μA VDS=32V, VIN=0V Input Threshold Voltage (Note 8) VIN(TH) 1 2.1 — V VDS=VGS, ID=1mA Input Current IIN — 0.7 1.2 mA VIN=5V Input Current IIN — 1.5 2.7 mA VIN=7V Input Current IIN — 4 7 mA VIN=10V Static Drain-Source On-State Resistance RDS(ON) — 520 675 mΩ VIN=5V, ID=0.7A Static Drain-Source On-State Resistance RDS(ON) — 385 550 mΩ VIN=10V, ID=0.7A Current Limit (Note 9) ID(LIM) 0.7 1.1 1.75 A VIN=5V, VDS>5V Current Limit (Note 9) ID(LIM) 2 3 4 A VIN=10V, VDS>5V Dynamic Characteristics Turn-On Time (VIN to 90% ID) tON — 2.2 — μs RL=22Ω, VIN=0 to 10V, VDD=12V Turn-Off Time (VIN to 90% ID) tOFF — 13 — μs RL=22Ω, VIN=10V to 0V, VDD=12V Slew Rate On (70 to 50% VDD) -dVDS/dtON — 10 — V/μs RL=22Ω, VIN=0 to 10V, VDD=12V Slew Rate Off (50 to 70% VDD) dVDS/dtON — 3.2 — V/μs RL=22Ω, VIN=10V to 0V, VDD=12V Protection Functions (Note 10) Minimum Input Voltage for Over Temperature Protection VPROT 4.5 — — V — Thermal Overload Trip Temperature TJT +150 +175 — °C — Thermal Hysteresis — — +10 — °C — Unclamped Single Pulse Inductive Energy TJ = +25° C EAS 550 — — mJ ID(ISO)=0.7A, VDD=32V Unclamped Single Pulse Inductive Energy TJ = +150° C EAS 200 — — mJ ID(ISO)=0.7A, VDD=32V Inverse Diode Source Drain Voltage VSD — — 1 V VIN=0V, -ID=1.4A Notes: 8. Protection features may operate outside spec for V IN < 4.5V. 9. The drain current is limited to a reduced value when V DS exceeds a safe level. 10. Integrated protection functions are designed to prevent I C destruction under fault conditions described in the datasheet. Fault conditions are considered as ”outside" normal operating range. Protection functions are not designed for continuous, r epetitive operation.
Document number: DS33015 Rev. 5 - 2 6 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION Characteristics RDS(ON) RDS(ON) VIN(TH)
Document number: DS33015 Rev. 5 - 2 7 of 8 www.diodes.com June 2018 © Diodes Incorporated BSP75G ADVANCE INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) SOT223 (Type DN) Dim Min Max Typ A -- 1.70 -- A1 0.01 0.15 -- A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -- c 0.20 0.32 -- D 6.30 6.70 -- E 6.70 7.30 -- E1 3.30 3.70 -- e -- -- 2.30 e1 -- -- 4.60 L 0.85 -- -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 A1A D b e C E L 0.25 Seating Plane Gauge Plane Y X C C1 Y2
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