BSP40

BSP40 DIOTEC | Alldatasheet

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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 4 01.11.2003 321 ±0.1 6.5 ±0.2 0.7 3.25 2.3 ±0.3 1.65 3.5 ±0.2 BSP 40 ... BSP 43 Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSP 40 BSP 41 BSP 42 BSP 43 Collector-Emitter-voltage B open V CE0 60 V 80 V Collector-Base-voltage E open V CB0 70 V 90 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 1.3 W 1) Collector current – Kollektorstrom (dc) I C 1 A Peak Collector current – Kollektor-Spitzenstrom I CM 2 A Peak Base current – Basis-Spitzenstrom I BM 200 mA Junction temperature – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 60 V I CB0 – – 100 nA IE = 0, VCB = 60 V, Tj = 150/g47CI CB0 – – 50 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V I EB0 – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) IC = 150 mA, IB = 15 mA V CEsat – – 250 mV IC = 500 mA, IB = 50 mA V CEsat – – 500 mV

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 501.11.2003 Switching Transistors BSP 40 ... BSP 43 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 150 mA, IB = 15 mA V BEsat – – 1 V IC = 500 mA, IB = 50 mA V BEsat – – 1.2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 5 V, - IC = 100 /g58A BSP 40 BSP 42 hFE 10 – – - VCE = 5 V, - IC = 100 mA h FE 40 – 120 - VCE = 5 V, - IC = 500 mA h FE 30 – – - VCE = 5 V, - IC = 100 /g58A BSP 41 BSP 43 h FE 30 – – - VCE = 5 V, - IC = 100 mA h FE 100 – 300 - VCE = 5 V, - IC = 500 mA h FE 50 – – Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz f T 100 MHz – – Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft R thA 93 K/W 2) junction to soldering point – Sperrschicht zu Lötpad R thS 12 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BSP 30, BSP 31, BSP 32, BSP 33