BSP30 STMICROELECTRONICS | Alldatasheet

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■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■ NPN COMPLEMENTS ARE BSP40, BSP41, BSP42 AND BSP43 RESPECTIVELY INTERNAL SCHEMATIC DIAGRAM October 1995 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BSP30/BSP31 BSP32/BSP33 V CBO Collector-Base Voltage (IE = 0) -70 -90 V V CEO Collector-Emitter Voltage (IB = 0) -60 -80 V V CES Collector-Emitter Voltage (RBE = 1KΩ )- 7 0 - 9 0 V V EBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -1 A IB Base Current -0.1 A P tot Total Dissipation at Tc = 25 oC2 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC SOT-223

R thj-amb • R thj-tab • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Collecor Tab Max 62.5 oC/W oC/W

  • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) V CB = -60 V V CB = -60 V Tj = 150 oC -100 -50 nA µ A V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100 µ A for BSP30/BSP31 for BSP32/BSP33 -70 -90 V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA for BSP30/BSP31 for BSP32/BSP33 -60 -80 V V V (BR)CES Collector-Emitter Breakdown Voltage (VBE = 0) IC = -10 µ A for BSP30/BSP31 for BSP32/BSP33 -70 -90 V V V (BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IC = -10 µ A -5 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = -150 mA IB = -15 mA IC = -500 mA IB = -50 mA -0.25 -0.5 V V V BE(sat)∗ Base-Emitter Saturation Voltage IC = -150 mA IB = -15 mA IC = -500 mA IB = -50 mA -1.2 V V hFE ∗ DC Current Gain for BSP30/BSP31 IC = -100 µ A VCE = -5 V IC = -100 mA VCE = -5 V IC = -500 mA VCE = -5 V for BSP32/BSP33 IC = -100 µ A VCE = -5 V IC = -100 mA VCE = -5 V IC = -500 mA VCE = -5 V 120 300 fT Transition Frequency I C = -50 mA VCE = -10 V f = 35 MHz 100 MHz C CBO Collector-Base Capacitance IE = 0 VCB = -10 V f = 1 MHz 20 pF C EBO Emitter-Base Capacitance IC = 0 VEB = -0.5 V f = 1 MHz 120 pF ton Turn-on Time I C = -100 mA IB1 = -IB2 = -5 mA 500 ns toff Turn-on Time 650 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % BSP30/31/32/33

DIM. mm mils e4 0.32 12.6 C CB E L a b f g c d SOT223 MECHANICAL DATA P008B BSP30/31/32/33

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A BSP30/31/32/33