BSP304 PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Product specification File under Discrete Semiconductors, SC07

1995 Apr 07

BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors

1995 Apr 07 2

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A

FEATURES

  • Direct interface to C-MOS, TTL etc.
  • High speed switching
  • No secondary breakdown.

APPLICATIONS

  • Intended for use as a Line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package. PINNING - TO-92 variant PIN SYMBOL DESCRIPTION BSP304 1 g gate 2 d drain 3 s source BSP304A 1 s source 2 g gate 3 d drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. handbook, halfpage s d g MAM144 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −− 300 V VGSO gate-source voltage (DC) open drain −± 20 V VGSth gate-source threshold voltage I D = −1 mA; VDS =V GS −1.7 −2.55 V ID drain current (DC) −− 170 mA R DSon drain-source on-state resistance I D = −170 mA; VGS = −10 V − 17 Ω Ptot total power dissipation up to T amb =2 5°C − 1W

1995 Apr 07 3

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the“Limiting values” and“Thermal characteristics” 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2. CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −− 300 V VGSO gate-source voltage (DC) open drain −± 20 V ID drain current (DC) −− 170 mA IDM peak drain current −− 0.75 A Ptot total power dissipation up to T amb =2 5°C; note 1 − 1W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 125 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = −10 µA −300 −− V VGSth gate-source threshold voltage VDS =V GS ; ID = −1m A −1.7 −− 2.55 V IDSS drain-source leakage current V GS = 0; VDS = −240 V −−− 100 nA IGSS gate leakage current V GS = ±20 V; VDS =0 −−± 100 nA R DSon drain-source on-state resistance VGS = −10 V; ID = −170 mA −− 17 Ω yfs forward transfer admittance V DS = −25 V; ID = −170 mA 100 −− mS C iss input capacitance V GS = 0; VDS = −25 V; f = 1 MHz− 60 90 pF C oss output capacitance V GS = 0; VDS = −25 V; f = 1 MHz− 15 30 pF C rss reverse transfer capacitance V GS = 0; VDS = −20 V; f = 1 MHz− 51 5 p F Switching times (see Figs2 and3) ton turn-on time V GS =0t o−10 V; VDD = −50 V; ID = −250 mA − 51 0 n s toff turn-off time V GS = −10 to 0 V; VDD = −50 V; ID = −250 mA − 15 30 ns

1995 Apr 07 4

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A Fig.2 Switching time test circuit. handbook, halfpage MBB689 50 Ω ID 10 V V = 50 VDD Fig.3 Input and output waveforms. handbook, halfpage MBB690 10 % 90 % 90 % 10 % ton toff OUTPUT INPUT Fig.4 Power derating curve. handbook, halfpage 0 200 0.4 0.8 1.2 MLC697 T ( C)amb o 50 100 150 P tot (W) δ = 0.01. Tamb =2 5°C. (1) RDSon limitation. Fig.5 DC SOAR. handbook, halfpage MLC699 11 0 1 0 V DS (V) ID (A) 110 210 tp T P t tp Tδ = 1 s 100 µs 1 ms 10 ms 100 ms DC (1) tp = 10 µs 310 10 3

1995 Apr 07 5

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A Fig.6 Capacitance as a function of drain source voltage; typical values. VGS =0 . Tj=2 5°C. f = 1 MHz. handbook, halfpage 100 10 20 30 MLC688 C (pF) V (V)DS Coss C rss C iss Fig.7 Typical output characteristics. Tj=2 5°C. handbook, halfpage 024 1 0 800 600 200 400 MLD139 ID (mA) V (V)DS 128 P = 1 W V = 10 VGS 7 V 6 V 5 V 4 V 3.5 V 3 V Fig.8 Typical transfer characteristics. VDS = −25 V. Tj=2 5°C. handbook, halfpage 024 1 0 800 600 200 400 MLC689 ID (mA) V (V)GS Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. ID = −170 mA. Tj=2 5°C. handbook, halfpage 02468 1 0 R DSon (Ω ) V (V)GS MLC691

1995 Apr 07 6

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A Fig.10 Drain-source on-state resistance as a function of drain current; typical values. Tj=2 5°C. handbook, halfpage 1 1 01 01 0 ID (mA) VGS = 3 V 4 V 5 V 7 V 10 V MLC692 6 V R DSon (Ω ) Fig.11 Temperature coefficient of gate-source threshold voltage. Typical VGSth at ID = −1 mA; VDS =V GS . k V GSth at Tj handbook, halfpage 0.8 0.9 1.0 1.1 0 50 100 15050 k T ( C)j o MLC696 Fig.12 Temperature coefficient of drain-source on-state resistance. Typical RDSon at ID = −170 mA; VGS = −10 V. k R DSon at Tj handbook, halfpage 0.5 1.5 2.5 0 50 100 150 k T ( C)j o MLC695

1995 Apr 07 7

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A Fig.13 Transient thermal resistance from junction to ambient as a function of pulse time; typical values. Tamb =2 5°C. handbook, full pagewidth 0.5 0.2 0.1 0.05 0.02 0.01 11 0 103 102 103 (K/W) MLC698 tp (s) 0.75 δ = 102 tp T P t tp Tδ = R th j-a 110 510 210 110310410

1995 Apr 07 8

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A PACKAGE OUTLINE Fig.14 TO-92 variant. Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. handbook, full pagewidth MBC015 - 1 2.544.8 max 4.2 max 1.6 0.66 0.56 5.2 max 12.7 min 2.5 max(1) 0.48 0.40 0.40 min

1995 Apr 07 9

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.