BSP30

BSP30 DIOTEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 2

Technical content

1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2 01.11.2003 321 ±0.1 6.5 ±0.2 0.7 3.25 2.3 ±0.3 1.65 3.5 ±0.2 BSP 30 ... BSP 33 Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSP 30 BSP 31 BSP 32 BSP 33 Collector-Emitter-voltage B open - V CE0 60 V 80 V Collector-Base-voltage E open - V CB0 70 V 90 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 1.3 W 1) Collector current – Kollektorstrom (dc) - I C 1 A Peak Collector current – Koll.-Spitzenstrom - I CM 2 A Peak Base current – Basis-Spitzenstrom - I BM 200 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 60 V - I CB0 – – 100 nA IE = 0, - VCB = 60 V, Tj = 150/g47C- I CB0 – – 50 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - I EB0 – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) - IC = 150 mA, - IB = 15 mA - V CEsat – – 250 mV - IC = 500 mA, - IB = 50 mA - V CEsat – – 500 mV

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 301.11.2003 Switching Transistors BSP 30 ... BSP 33 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 150 mA, - IB = 15 mA - V BEsat – – 1 V - IC = 500 mA, - IB = 50 mA - V BEsat – – 1.2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 5 V, - IC = 100 /g58A BSP 30 BSP 32 hFE 10 – – - VCE = 5 V, - IC = 100 mA h FE 40 – 120 - VCE = 5 V, - IC = 500 mA h FE 30 – – - VCE = 5 V, - IC = 100 /g58A BSP 31 BSP 33 h FE 30 – – - VCE = 5 V, - IC = 100 mA h FE 100 – 300 - VCE = 5 V, - IC = 500 mA h FE 50 – – Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz f T 100 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 20 pF – Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 120 pF – Switching times – Schaltzeiten turn-on time - ICon = 100 mA, - IBon = 5 mA, IBoff = 5 mA ton – – 500 ns turn-off time t off – – 600 ns Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft R thA 93 K/W 2) junction to soldering point – Sperrschicht zu Lötpad R thS 12 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BSP 40, BSP 41, BSP 42, BSP 43