BSP230 KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSF ET P-Channel MOSFET BSP230 (KSP230) ■ Features

  • VDS (V) =-300V
  • ID =-0.21 A (VGS =-10V)
  • RDS(ON) ＜ 17Ω (VGS =-10V)
  • High-speed switching 1.80 (max) 0.02 ~ 0.1 0.70±0.1 4.60 (typ) 10b 7.0±0.3 3.50±0.2 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 1.Gate 2.Drain 3.Source 4.Drain 1 2 3 0.250 Gauge Plane ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -300 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -0.21 Pulsed Drain Current IDM -0.75 Power Dissipation PD 1.5 W Thermal Resistance.Junction- to-Ambient RthJA 83.3 ℃/W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -65 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -300 V Zero Gate Voltage Drain Current IDSS VDS=-240V, VGS=0V -100 nA Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-1mA -1.7 -2.55 V Static Drain-Source On-Resistance RDS(On) VGS=-10V, ID=-170mA 17 Ω Forward Transconductance gFS VDS=-25V, ID=-170mA 100 ms Input Capacitance Ciss 90 Output Capacitance Coss 30 Reverse Transfer Capacitance Crss 15 Turn-On DelayTime td(on) 10 Turn-Off DelayTime td(off) 30 pF ns VGS=0 to -10V, VDS=-50 V, ID=-250mA VGS=0V, VDS=-25V, f=1MHz S D G

www.kexin.com.cn2 MOSFE T P-Channel MOSFET BSP230 (KSP230) ■ Typical Characterisitics Fig.1 Switching time test circuit. MBB689 50 Ω I D −10 V V = −50 VDD Fig.2 Input and output waveforms. MBB690 10 % 90 % 90 % 10 % t on t off OUTPUT INPUT Fig.3 Power derating curve. handbook, halfpage 0020 0.4 0.8 1.2 1.6 T ( C)amb o 50 100 150 Ptot (W) δ= 0.01. Tamb = 25 °C. (1) RDSon limitation. Fig.4 DC SOAR. 1 10 10 VDS (V) ID (A) 110 210 t p T P t t p Tδ= 1 s 100 µs 1 ms 10 ms 100 ms DC (1) tp = 10 µs 310 10 3 Fig.5 Capacitance as a function of drain source voltage; typical values. VGS = 0. Tj = 25 °C. f = 1 MHz. handbook, halfpage 100 10 20 30 C (pF) V (V)DS Coss Crss Ciss Fig.6 Typical output characteristics. Tj = 25 °C. 01420 800 600 200 400 I D (mA) V (V)DS 128 P = 1.5 W V = 10 VGS 7 V 6 V 5 V 4 V 3.5 V 3 V

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET BSP230 (KSP230) ■ Typical Characterisitics Fig.7 Typical transfer characteristics. VDS = −25 V. Tj = 25 °C. handbook, halfpage 01420 800 600 200 400 I D (mA) V (V)GS Fig.8 Drain-source on-state resistance as a function of gate-source voltage; typical values. ID = −170 mA. Tj = 25 °C. handbook, halfpage 0 2 4 6 8 10 RDSon (Ω) V (V)GS Fig.9 Drain-source on-state resistance as a function of drain current; typical values. Tj = 25 °C. handbook, halfpage 1 10 10 10ID(mA) VGS= 3 V 4 V 5 V 7 V 10 V 2 3 6 V RDSon (Ω) Fig.10 Temperature coefficient of gate-source threshold voltage. Typical VGSth at ID = −1 mA; VDS = VGS. k VGSt h at Tj 0.8 0.9 1.0 1.1 0 50 100 15050 k T ( C)j o

www.kexin.com.cn4 MOSFE T P-Channel MOSFET BSP230 (KSP230) ■ Typical Characterisitics Fig.11 Temperature coefficient of drain-source on-state resistance. Typical RDSon at ID = −170 mA; VGS = −10 V. k RDSo n at Tj 0.5 1.5 2.5 0 50 100 150 k T ( C)j o50 Fig.12 Transient thermal resistance from junction to ambient as a function of pulse time; typical values. Tamb = 25 °C. 0.5 0.2 0.1 0.05 0.02 0.01 1 10 102 103 (K/W) tp (s) 0.75 δ = 102 t p T P t t p Tδ= Rth j-a 110 510 210 110310410