BSP170

BSP170P UMW | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 8

Technical content

Features

• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant Maximum ratings, at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C A T A=70 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=1.9 A, V DS=48 V, di /dt =-200 A/µs, T j,max=150 °C kV/µs Gate source voltage V GS V Power dissipation P tot T A=25 °C W Operating and storage temperature T j, T stg ESD class JESD22-C101 (HBM) Soldering temperature -1.9 -1.5 1.8 Value -7.6 steady state 0.18 55/150/56 -55 ... 150 ±20 1A (250V to 500V) 260 °C Product Summary UMW R BSP170www.umw-ic.com 1 UTD Semiconductor Co.,Limited mJ Avalanche energy, periodic limited byTjmax EAR VDS (V) = -60V ID = -1.9A (VGS = -10V) RDS(ON) < 300mΩ (VGS = -10V) -60V P-Channel MOSFET SOT-223 TOP VIEW 1:Gate 2/4:Date 3:Source

min. typ. max. Thermal characteristics Thermal resistance, junction -soldering point R thJS 20 K/W SMD version, device on PCB: R thJA minimal footprint 110 K/W6 cm 2 cooling area1) 70Electrical characteristics, atTj=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 VGate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -1.1 -2 -3 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T -0.1 -1 µAj =25 °C V DS=-60 V, V GS=0 V, T j=125 °C -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1.9 A 239 300 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max,I D=-1.9 A 1.3 2.6 S Valueswww.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R BSP170 -60V P-Channel MOSFET

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss 328 410 pF Output capacitance C oss 105 135 Reverse transfer capacitance C rss 38 48 Turn-on delay time t d(on) 14 21 ns Rise time t r 28 42 Turn-off delay time t d(off) 92 138 Fall time t f 60 90 Gate Charge Characteristics Gate to source charge Q gs -1.4 -1.9 nC Gate to drain charge Q gd -4.9 -7.4 Gate charge total Q g -10 -14 Gate plateau voltage V plateau -4.34 - V Reverse Diode Diode continuous forward current I S -1.98 A Diode pulse current I S,pulse -7.6 Diode forward voltage V SD V GS=0 V, I F=-1.9 A, Reverse recovery time t rr 36 54 nsReverse recovery charge Q rr 41 62 nC T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=- 10 V, I D=-1.9 A, R G=6 Ω V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V V R=30 V, I F=|I S|, di F/dt =100 A/µs www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R BSP170 -60V P-Channel MOSFET

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance ID=f(VDS); TA=25 °C1); D =0 ZthJA=f(t p) parameter: t p parameter: D=tp/T 10 µs 100 µs 1 ms 10 ms 100 ms DC 101 100 10-1 10-2 0.1 1 10 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 102 101 100 10-1 t p [s] Z thJS [K/W] 0.3 0.6 0.9 1.2 1.5 1.8 0 40 80 120 160 TA [°C] P tot [W] 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0 40 80 120 160 TA [°C] -I D [A] www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R BSP170 -60V P-Channel MOSFET

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -4 V -4.5 V -5 V -5.5 V -6 V -7 V -10 V -20 V 100 200 300 400 500 600 700 800 900 1000 0123 -I D [A] R DS(on) [mΩ] 25 °C 125 °C 012345 -V GS [V] -I D [A] 0.5 1.5 2.5 3.5 0 0.5 1 1.5 2 2.5 -I D [A] g fs [S] -4V -4.5 V -5 V -5.5 V -6V -7 V -10 V -20 V 012345 -V DS [V] -I D [A] 5www.umw-ic.com UTD Semiconductor Co.,Limited UMW R BSP170 -60V P-Channel MOSFET

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 100 150 200 250 300 350 400 450 500 550 600 -60 -20 20 60 100 140 T j [°C] R DS(on) [mΩ] Ciss Coss Crss 103 102 101 0 5 10 15 20 25 -V DS [V] C [pF] typ. min. max. -60 -20 20 60 100 140 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 101 100 10-1 10-2 0 0.5 1 1.5 2 2.5 3 -V SD [V] I F [A] 6www.umw-ic.com UTD Semiconductor Co.,Limited UMW R BSP170 -60V P-Channel MOSFET

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=-250 µA -60 -20 20 60 100 140 T j [°C] -V BR(DSS) [V] 25 °C 100 °C 125 °C 104103102101100 101 100 10-1 t AV [µs] -I AV [A] 12 V 30 V 48 V 0 5 10 15 Q gate [nC] V GS [V] 7www.umw-ic.com UTD Semiconductor Co.,Limited UMW R BSP170 -60V P-Channel MOSFET

SOT-223: 8 www.umw-ic.com UTD Semiconductor Co.,Limited Marking

Ordering information

Order code Package Baseqty Deliverymode UMW BSP170 SOT-223 2500 Tape and reel UMW R BSP170 -60V P-Channel MOSFET