BSP16 KEXIN | Alldatasheet
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Technical content
Features
High voltage (max. 350 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage (open emitter) V CBO -350 V collector-emitter voltage (open base) V CEO -300 V emitter-base voltage (open collector) V EBO -6 V collector current (DC) I C -200 mA base current (DC) I B -200 mA total power dissipation Tamb 25 * Ptot 1.28 W storage temperature T stg -65 to 150 junction temperature T j 150 operating ambient temperature T amb -65 to 150 thermal resistance from junction to ambient * Rth j-a 97 K/W thermal resistance from junction to soldering point Rth j-s 16 K/W * . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collector cut-off current I CBO IE =0 ;VCB = -280 V -100 nA emitter cut-off current I EBO IC =0 ;VEB =- 6V - 1 0 0 n A DC current gain h FE IC =- 5 0m A ;VCE =- 1 0V 3 0 1 2 0 collector-emitter saturation voltage V CEsat IC =- 5 0m A ;IB =- 5m A - 2 V collector capacitance C c IE =i e =0 ;VCB = -10 V; f = 1 MHz 15 pF transition frequency f T IC =- 1 0m A ;VCE = -10 V; f = 100 MHz 15 MHz