BSP145 PHILIPS | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC07

1995 Apr 24

N-channel enhancement mode vertical D-MOS transistor

1995 Apr 24 2

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145

FEATURES

  • Direct interface to C-MOS, TTL, etc.
  • High speed switching
  • No secondary breakdown.

APPLICATIONS

  • Intended for applications in relay, high speed and line transformer drivers.

DESCRIPTION

N-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. PINNING - SOT223 PIN SYMBOL DESCRIPTION 1 g gate 2 d drain 3 s source 4 d drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. handbook, halfpage MAM054 123 Top view s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage − 450 V VGSO gate-source voltage open drain −± 20 V VGSth gate-source threshold voltage I D = 1 mA; VDS =V GS 34V ID drain current − 250 mA R DSon drain-source on-state resistance I D = 100 mA; VGS = 10 V 10 14 Ω Ptot total power dissipation up to T amb =2 5°C − 1.5 W

1995 Apr 24 3

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the“Limiting values” and“Thermal characteristics” 1. Device mounted on an epoxy printed-circuit board, 40× 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2. CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 450 V VGSO gate-source voltage open drain −± 20 V ID drain current − 250 mA IDM peak drain current − 1A Ptot total power dissipation up to T amb =2 5°C; note 1 − 1.5 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 83.3 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID =1 0µA 450 −− V VGSth gate-source threshold voltage VDS =V GS ; ID =1m A 2 3 4 V IDSS drain-source leakage current V GS = 0; VDS = 350 V −− 1 µA IGSS gate leakage current V DS = 0; VGS = ±20 V −−± 100 nA R DSon drain-source on-state resistance VGS =1 0V ; ID = 100 mA − 10 14 Ω yfs forward transfer admittance V DS = 25 V; ID =250 mA 200 −− mS C iss input capacitance V GS = 0; VDS =2 5V ; f=1M H z− 90 120 pF C oss output capacitance V GS = 0; VDS =2 5V ; f=1M H z− 25 35 pF C rss reverse transfer capacitance V GS = 0; VDS =2 5V ; f=1M H z− 25p F Switching times(see Figs 2 and 3) ton turn-on time V GS =0t o1 0V ; VDD = 200 V; ID = 100 mA −− 10 ns toff turn-off time V GS =1 0t o0V ; VDD =200 V; ID = 100 mA −− 100 ns

1995 Apr 24 4

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 Fig.2 Switching time test circuit. handbook, halfpage MSA631 50 Ω VDD = 50 V ID 10 V 0 V Fig.3 Input and output waveforms. handbook, halfpage MBB692 10 % 90 % 90 % 10 % ton toff OUTPUT INPUT Fig.4 Power derating curve. handbook, halfpage 0.5 1.5 0 50 100 150 Ptot (W) Tamb (°C) MRC207 δ = 0.01. Tamb =2 5°C. (1) RDSon limitation. Fig.5 DC SOAR. handbook, halfpage MGC433 11 0 1 0 V DS (V) ID (A) 110 210 tp T P t tp Tδ = 1 s 100 µs 1 ms 10 ms 100 ms DC (1) tp = 10 µs 310 10 3

1995 Apr 24 5

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 Fig.6 Capacitance as a function of drain source voltage; typical values. VGS =0 . Tj=2 5°C. f = 1 MHz. handbook, halfpage 120 10 20 30 MGC431 C (pF) V (V)DS C rss C iss Coss Fig.7 Typical output characteristics. Tj=2 5°C. handbook, halfpage 04 1 2 0.8 0.4 0.2 0.6 MGC436 ID (A) V (V)DS 168 V = 10 VGS 4.5 V 4 V 6 V 5 V Fig.8 Typical transfer characteristics. VDS =1 0V . Tj=2 5°C. handbook, halfpage 051 0 0.5 MGC435 ID (A) V (V)GS Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. ID =1 0m A . Tj=2 5°C. handbook, halfpage 05 1 0 R DS (Ω ) V (V)GS MGC438 on

1995 Apr 24 6

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 Fig.10 Drain-source on-state resistance as a function of drain current; typical values. Tj=2 5°C. handbook, halfpage 110 1010 ID (A) VGS = 4 V 4.5 V5 V 10 V MGC437 3 2 1 6 V R DS (Ω ) on Fig.11 Temperature coefficient of gate-source threshold voltage. ID = 1 mA; VDS =V GS . k V GSth at Tj handbook, halfpage 0.6 0.8 1.0 1.2 50 15050 k T ( C)j o MGC434 Fig.12 Temperature coefficient of drain-source on-state resistance. k R DSon at Tj handbook, halfpage 0.5 1.5 2.5 0 50 100 150 k Tj (°C) MLC695 −50

1995 Apr 24 7

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 Fig.13 Thermal resistance from junction to ambient as a function of pulse time; typical values. Tamb =2 5°C. handbook, full pagewidth 0.33 0.2 0.5 0.1 0.05 0.02 0.01 11 0 102 103 (K/W) MGC432 tp (s) 0.75 δ = 102 tp T P t tp Tδ = R th j-a 110 610 510 210 110310410

1995 Apr 24 8

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 PACKAGE OUTLINE Fig.14 SOT223. Dimensions in mm. andbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 A B 0.2 A 1.80 max 1616o max 10o max 0.10 0.01 0.32 0.24 123 MSA035 - 1(4x) 0.1 BM M S seating plane 0.1 S o

1995 Apr 24 9

Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.