BSO615NG UMW | Alldatasheet

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a. Package li mited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 4 Continuous Source Current (Diode Conduction) a IS 3.6 Pulsed Drain Current b IDM 28 Single Pulse Avalanche Current L = 0.1 mH IAS 18 Single Pulse Avalanche Energy EAS 16.2 mJ Maximum Power Dissipation b TC = 25 °C PD 4 W TC = 125 °C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 110 °C/WJunction-to-Foot (Drain) RthJF 34 ID = 7A (VGS =10V) /G108 VDS (V)= 60V RDS(ON) 40m (VGS = 10V) /G108RDS(ON) 55m (VGS = 4.5V) /G108 /G108 UMW R BSO615NG www.umw-ic.com 1 UTD Semiconductor Co.,LimitedS G2 D2D 2 D1 4 5 SOP-8

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not su bject to production testing. c. Independent of operating temperature. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 150 On-State Drain Current a ID(on) VGS = 10 V VDS ≥ 5 V 20 - - A Drain-Source On-State Resistance a RDS(on) VGS = 10 V I D = 4.5 A- 28 40 Ω VGS = 4.5 V I D = 4 A- 30 55 Forward Transconductance f gfs VDS = 15 V, ID = 4.5 A - 15 - S Dynamic b Input Capacitance C iss VGS = 0 V V DS = 25 V, f = 1 MHz - 600 750 pF Output Capacitance Coss - 110 140 Reverse Transfer Capacitance Crss -5 0 6 2 Total Gate Charge c Qg VGS = 10 V V DS = 30 V, ID = 5.3 A -1 1 . 7 1 8 nC Gate-Source Charge c Qgs -1 . 8 2 . 7 Gate-Drain Charge c Qgd -2 . 8 4 . 2 Gate Resistance Rg f = 1 MHz 1.3 - 6 Ω Turn-On Delay Time c td(on) VDD = 30 V, RL = 6.8 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω -7 1 1 ns Rise Time c tr -3 .3 5 Turn-Off Delay Time c td(off) - 22.4 33.5 Fall Time c tf -2 . 1 3 . 2 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- 2 8 A Forward Voltage VSD IF = 2 A, VGS = 0 V - 0.75 1.1 V UMW R BSO615NG www.umw-ic.com 2 UTD Semiconductor Co.,Limited m

TYPICAL CHARAC TERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 02468 1 0 VGS = 10 V thru 5 V VGS =4V VGS =3V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0 3 6 9 12 15 ID - Drain Current (A) - Transconductance (S)g fs TC = 125 °C TC = 25 °C TC = -55 °C Crss 200 400 600 800 1000 0 1 02 03 04 05 06 0 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 01 2345 TC = - 55 °C TC = 125 °C TC = 25 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 VGS =1 0V VGS =4 . 5V RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 02468 1 0 1 2 ID =5 . 3A VDS =3 0V Qg - Total Gate Charge (nC) VGS - Gate-to-Source Voltage (V) UMW R BSO615NGwww.umw-ic.com 3 UTD Semiconductor Co.,Limited

TYPICAL CHARAC TERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 ID =5 . 3A VGS =1 0V VGS =4 . 5V TJ - Junction Temperature (°C) (Normalized)RDS(on) - On-Resistance TJ = 25 °C TJ = 150 °C 0.01 0.001 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) - 50 - 25 0 25 50 75 100 125 150 175 ID =1m A TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) 0.05 0.10 0.15 0.20 0.25 02468 1 0 TJ =2 5 ° C TJ = 150 °C RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) -1.2 -0.9 -0.6 -0.3 0.3 0.6 -50 -25 0 25 50 75 100 125 150 175 ID =5m A ID = 250 μA VGS(th) Variance (V) TJ - Temperature (°C) UMW R BSO615NGwww.umw-ic.com 4 UTD Semiconductor Co.,Limited

THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) TC =2 5 °C Single Pulse BVDSS Limited Limited by R *DS(on) IDM Limited 100 µs 1 ms 10 ms 100 ms 1 s 10 s, DC 0.1 0.01 10-4 10-3 10-2 10-1 1 10 600 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM 100 UMW R BSO615NGwww.umw-ic.com 5 UTD Semiconductor Co.,Limited

THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance UMW R BSO615NGwww.umw-ic.com 6 UTD Semiconductor Co.,Limited

R BSO615NGwww.umw-ic.com 7 UTD Semiconductor Co.,Limited Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e L 0.400 1.270 0.016 0.050 θ 0 °8 °0 °8 ° Dimensions In Millimeters Dimensions In InchesSymbol 1.270(BSC) 0.050(BSC) SOP-8

Order code Package Baseqty Deliverymode UMW BSO615NG SOP-8 3000 Tape and reelwww.umw-ic.com 8 UTD Semiconductor Co.,Limited UMW R BSO615NG