BSO615CT

BSO615CT INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 13

Technical content

Features

• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated Type Package Ordering Code BSO 615 C SO 8 Q67041-S4024 Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit N P Continuous drain current TA = 25 °C TA = 70 °C ID 3.1 2.5 -1.6 A Pulsed drain current TA = 25 °C ID puls 12.4 -8 Avalanche energy, single pulse ID = 3.1 A , VDD = 25 V, R GS = 25 Ω ID = -2 A , VDD = -25 V, R GS = 25 Ω EAS mJ Avalanche energy, periodic limited by Tjmax EAR 0.2 0.2 Reverse diode dv/dt, Tjmax = 150 °C IS = 3.1 A, V DS = 48 V, di/dt = 200 A/µs IS = -2 A, V DS = -48 V, di/dt = -200 A/µs dv/dt kV/µs Gate source voltage VGS ±20 ±20 V Power dissipation TA = 25 °C Ptot 2 2 W Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Preliminary data BSO 615 C Termal Characteristics Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) N P R thJS - K/W SMD version, device on PCB: @ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1); t ≤ 10 sec. @ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1); t ≤ 10 sec. N N P P R thJA 100 62.5 110 62.5 Static Characteristics, at Tj = 25 °C, unless otherwise specified Drain- source breakdown voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA N P V(BR)DSS -60 V Gate threshold voltage, VGS = VDS ID = 20 µA ID = -450 µA N P VGS(th) 1.2 1.6 -1.5 2.0 -2.0 Zero gate voltage drain current VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C N N P P IDSS 0.1 -0.1 -10 100 -100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V N P IGSS -10 100 -100 nA Drain-Source on-state resistance VGS = 4.5 V, ID = 2.7 A VGS = -4.5 V, ID = -1.7 A N P R DS(on) 0.1 0.27 0.15 0.45 Ω Drain-Source on-state resistance VGS = 10 V, ID = 3.1 A VGS = -10 V , ID = -2 A N P R DS(on) 0.07 0.19 0.11 0.3 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Preliminary data BSO 615 C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Transconductance VDS ≥2 * ID * R DS(on)max, ID = 2.7 A VV DS ≥2 * ID * R DS(on)max, ID = -1.7 A N P gfs 2.25 1.2 5.5 2.4 S Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz N P Ciss 300 365 380 460 pF Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz N P Coss 105 120 135 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz N P Crss Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 2.7 A, R G = 16 Ω VDD = -30 V, V GS = -4.5 V, ID = -1.7 A, R G = 13 Ω N P td(on) ns Rise time VDD = 30 V, VGS = 4.5 V, ID = 2.7 A, R G = 16 Ω VDD = -30 V, V GS = -4.5 V, ID = -1.7 A, R G = 13 Ω N P tr 105 115 160 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 2.7 A, R G = 16 Ω VDD = -30 V, V GS = -4.5 V, ID = -1.7 A, R G = 13 Ω N P td(off) 125 190 Fall time VDD = 30 V, VGS = 4.5 V, ID = 2.7 A, R G = 16 Ω VDD = -30 V, V GS = -4.5 V, ID = -1.7 , R G = 13 Ω N P tf 135

Preliminary data BSO 615 C Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Gate to source charge VDD = 48 V, ID = 3.1 A VDD = -48 V, ID = -2 A N P Q gs 0.5 1.7 0.75 2.6 nC Gate to drain charge VDD = 48 V, ID = 3.1 A VDD = -48 V, ID = -2 A N P Q gd 6.3 4.3 9.5 6.5 Gate charge total VDD = 48 V, ID = 3.1 A, VGS = 0 to 10V VDD = -48 V, ID = -2 A, VGS = 0 to -10V N P Q g 13.5 22.5 Gate plateau voltage VDD = 48 V, ID = 3.1 A VDD = -48 V, ID = -2 A N P V(plateau) 3.1 -2.8 V Reverse Diode Inverse diode continuous forward current TA = 25 °C N P IS - 3.1 A Inverse diode direct current,pulsed TA = 25 °C N P ISM - 12.4 Inverse diode forward voltage VGS = 0 V, IF = IS VGS = 0 V, IF = IS N P VSD 0.8 -0.8 1.1 -1.1 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs VR = -30 V, IF=lS , diF/dt = -100 A/µs N P trr 130 ns Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs VR = -30 V, IF=lS, diF/dt = -100 A/µs N P Q rr 120 105 180 µC

Preliminary data BSO 615 C Power Dissipation (P-Ch.) Ptot = f (TA ) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 W 2.2 BSO 615 C Ptot Power Dissipation (N-Ch.) Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 W 2.2 BSO 615 C Ptot Drain current (N-Ch.) ID = f (TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 A 3.4 BSO 615 C ID Drain current (P-Ch.) ID = f (TA ) parameter: VGS ≥ -10 V 0 20 40 60 80 100 120 °C 160 TA 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 A -2.2 BSO 615 C ID

Preliminary data BSO 615 C Safe operating area (N-Ch.) ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 -1 10 0 10 1 10 2 V VDS -2 10 -1 10 0 10 1 10 2 10 A BSO 615 C ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 4.7µs Safe operating area (P-Ch.) ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSO 615 C ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 90.0µs Transient thermal impedance (N-Ch.) ZthJC = f(tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -1 10 0 10 1 10 2 10 K/W BSO 615 C ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Transient thermal impedance (P-Ch.) ZthJC = f(tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSO 615 C ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Preliminary data BSO 615 C Typ. output characteristics (N-Ch.) ID = f (VDS ) parameter: tp = 80 µs VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 A 7.5 BSO 615 C ID VGS [V] a a 2.5 b b 2.7 c c 3.0 d d 3.2 e e 3.5 f f 3.7 g Ptot = 2.00W g 4.0 Typ. output characteristics (P-Ch.) ID = f (VDS ) parameter: tp = 80 µs VDS 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 A -5.0 BSO 615 C ID VGS [V] a a -2.5 b b -2.7 c c -3.0 d d -3.2 e e -3.5 f f -3.7 g Ptot = 2.00W g -4.0 Typ. drain-source-on-resistance (N-Ch.) R DS(on) = f (ID ) parameter: VGS ID 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 Ω 0.36 BSO 615 C R DS(on) c VGS [V] = c 3.0 d d 3.2 e e 3.5 f f 3.7 g g 4.0 Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID ) parameter: VGS Tj 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω 1.0 BSO 615 C R DS(on) a VGS [V] = a -2.5 b b -2.7 c c -3.0 d d -3.2 e e -3.5 f f -3.7 g g -4.0

Preliminary data BSO 615 C Typ. transfer characteristics (N-Ch.) parameter: tp = 80 µs ID = f (VGS ), V DS ≥ 2 x ID x R DS(on)max V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 A 7.0 ID Typ. transfer characteristics (P-Ch.) parameter: tp = 80 µs ID = f (VGS ), VDS ≥ 2 x ID x RDS(on)max V 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 A -5.0 ID Typ. forward transconductance (N-Ch.) gfs = f(ID ); Tj = 25 °C parameter: gfs 0 1 2 3 4 5 6 7 8 A 10 ID 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 S 10.0 gfs Typ. forward transconductance (P-Ch.) gfs = f(ID ); Tj = 25 °C parameter: gfs ID 0.0 0.5 1.0 1.5 2.0 2.5 3.0 S 4.0 gfs

Preliminary data BSO 615 C Drain-source on-resistance (N-Ch.) R DS(on) = f (Tj) parameter : ID = 3.1 A , VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 Ω 0.30 BSO 615 C R DS(on) typ 98% Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) parameter : ID = -2 A , VGS = -10 V -60 -20 20 60 100 °C 180 Tj 0.00 0.10 0.20 0.30 0.40 0.50 0.60 Ω 0.80 BSO 615 C R DS(on) typ 98% Gate threshold voltage (N-Ch.) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 20 µA -60 -20 20 60 100 °C 160 Tj 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 V 3.0 V GS(th) -60 -20 20 60 100 °C 160 Tj 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 V 3.0 V GS(th) typ -60 -20 20 60 100 °C 160 Tj 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 V 3.0 V GS(th) 98% -60 -20 20 60 100 °C 160 Tj 0.0 0.2 0.5 0.8 1.0 1.2 1.5 1.8 2.0 2.2 2.5 V 3.0 V GS(th) Gate threshold voltage (P-Ch.) VGS(th) = f (Tj) parameter: VGS = VDS , ID = -450 µA -60 -20 20 60 100 °C 160 Tj 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 V -3.0 V GS(th) -60 -20 20 60 100 °C 160 Tj 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 V -3.0 V GS(th) typ -60 -20 20 60 100 °C 160 Tj 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 V -3.0 V GS(th) 98% -60 -20 20 60 100 °C 160 Tj 0.0 -0.2 -0.5 -0.8 -1.0 -1.2 -1.5 -1.8 -2.0 -2.2 -2.5 V -3.0 V GS(th)

Preliminary data BSO 615 C Typ. capacitances (N-Ch.) C = f(VDS ) parameter: VGS =0 V, f=1 MHz 0 5 10 15 20 25 VDS 35 V 1 10 2 10 3 10 pF C C iss C oss C rss Typ. capacitances (P-Ch.) C = f(VDS ) parameter: VGS =0 V, f=1 MHz 0 -5 -10 -15 -20 -25 VDS -35 V 1 10 2 10 3 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ), (N-Ch.) parameter: Tj , tp = 80 µs VSD -2 10 -1 10 0 10 1 10 A BSO 615 C IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) Forward characteristics of reverse diode IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 µs VSD -2 10 -1 10 0 10 1 10 A BSO 615 C IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Preliminary data BSO 615 C Avalanche Energy EAS = f (Tj) (N-Ch.) parameter: ID = 3.1 A , V DD = 25 V R GS = 25 Ω 25 45 65 85 105 125 °C 165 Tj mJ E AS Avalanche Energy EAS = f (Tj) parameter: ID = -2 A , VDD = -25 V RGS = 25 Ω 25 45 65 85 105 125 °C 165 Tj mJ E AS Typ. gate charge (N-Ch.) VGS = f (Q Gate) parameter: ID = 3.1 A 0 2 4 6 8 10 12 14 16 nC 20 Q Gate V BSO 615 C VGS DS maxV0,8 DS maxV0,2 Typ. gate charge (P-Ch.) VGS = f (Q Gate) parameter: ID = -2 A 0 2 4 6 8 10 12 14 16 nC 20 Q Gate -10 -12 V -16 BSO 615 C VGS DS maxV0,8 DS maxV0,2

Preliminary data BSO 615 C Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) -60 -20 20 60 100 °C 180 Tj V BSO 615 C V(BR)DSS Drain-source breakdown voltage V(BR)DSS = f (Tj), (P-Ch.) -60 -20 20 60 100 °C 180 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 BSO 615 C V(BR)DSS

Preliminary data BSO 615 C Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.