BSO4410

BSO4410 INFINEON | Alldatasheet

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OptiMOS/G01 ====Small-Signal-Transistor Product Summary VDS 30 V RDS(on) 13 m/G02 ID 11.1 A Feature /G03 N-Channel /G03 Enhancement mode /G03 Logic Level /G03 Excellent Gate Charge x RDS(on) product (FOM) /G03/G04 150°C operating temperature /G03 Avalanche rated /G03 dv/dt rated /G03/G04 Ideal for fast switching applications Type Package Ordering Code BSO4410 SO 8 Q67042-S4096 Marking 4410 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 11.1 8.9 A Pulsed drain current TA=25°C ID puls 44.5 Avalanche energy, single pulse ID=11.1 A , VDD =25V, RGS =25/G01 EAS 126 mJ Reverse diode dv/dt IS=11.1A, VDS =24V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA =25°C Ptot 2.5 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 35 K/W SMD version, device on PCB: @ min. footprint; t /G02/G03 10 sec. @ 6 cm2 cooling area 1); t /G02/G03 10 sec. RthJA 110 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=42µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS =30V, VGS =0V, Tj=25°C VDS =30V, VGS =0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS =20V, VDS =0V IGSS - 1 100 nA Drain-source on-state resistance VGS =4.5V, ID=9.2A RDS(on) - 15.6 18.8 m/G02 Drain-source on-state resistance VGS =10V, ID=11.1A RDS(on) - 11 13 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS /G04 2*ID*RDS(on)max , ID=8.9A 13.5 27 - S Input capacitance Ciss VGS =0V, VDS =25V, f=1MHz - 1020 1280 pF Output capacitance Coss - 420 530 Reverse transfer capacitanceCrss - 100 150 Gate resistance RG - 1.2 - /G02 Turn-on delay time td(on) VDD =15V, VGS =10V, ID=11.1A, RG =6.8/G01 - 7.5 11.3 ns Rise time tr - 33 49 Turn-off delay time td(off) - 31 47 Fall time tf - 23 35 Gate Charge Characteristics Gate to source charge Q gs VDD =15V, ID=11.1A - 3.2 4 nC Gate to drain charge Q gd - 9.3 14 Gate charge total Qg VDD =15V, ID=11.1A, VGS =0 to 5V - 17 21 Output charge Qoss VDS =15V, ID=11.1A, VGS =0V - 14.6 18 Gate plateau voltage V(plateau) VDD =15V, ID=11.1A - 3 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 2 A Inverse diode direct current, pulsed ISM - - 44.5 Inverse diode forward voltage VSD VGS =0V, IF =2A - 0.84 1.2 V Reverse recovery time trr VR =15V, IF =lS , diF/dt=100A/µs - 29 36 ns Reverse recovery charge Q rr - 28 35 nC

1 Power dissipation

Ptot = f (TA ) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 W 2.8 BSO4410 Ptot

2 Drain current

ID = f (TA ) parameter: VGS/G05 10 V 0 20 40 60 80 100 120 °C 160 TA A BSO4410 ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 -1 10 0 10 1 10 2 V VDS -2 10 -1 10 0 10 1 10 2 10 A BSO4410 ID R DS(on) = V DS DC 10 ms 1 ms tp = 200.0µs

4 Transient thermal impedance

ZthJS = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W BSO4410 ZthJS single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS A BSO4410 ID VGS [V] a a 2.8 b b 3.0 c c 3.2 d d 3.4 e e 3.6 f f 3.8 g g 4.0 h h 4.5 i Ptot = 2.5W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 4 8 12 16 A 24 ID m/G01 BSO4410 RDS(on) VGS [V] = d d 3.4 e e 3.6 f f 3.8 g g 4.0 h h 4.5 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G05 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 VDS 4 V A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 5 10 15 20 25 30 35 40 A 50 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 11.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj m/G01 BSO4410 RDS(on) typ 98%

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS, ID = 42 µA -60 -20 20 60 100 °C 160 Tj 0.5 1.5 V 2.5 VGS(th) typ. max. min. 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A BSO4410 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 5 10 15 20 V 30 VDS 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 11.1 A , VDD = 25 V, RGS = 25 /G02 25 50 75 100 °C 150 Tj 100 110 mJ 130 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 11.1 A pulsed 0 10 20 30 40 nC 55 QGate V BSO4410 VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 °C 180 Tj V BSO4410 V (BR)DSS

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