BSO301SPH INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • P-Channel
  • Enhancement mode
  • Logic level
  • 150°C operating temperature
  • Avalanche rated
  • Qualified according JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit ≤10 secs steady state Continuous drain current I D T A=25 °C1) -14.9 -12.6 A Pulsed drain current I D,pulse T A=25 °C2) Avalanche energy, single pulse E AS I D=-14.9 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T A=25 °C1) 2.5 1.79 W Operating and storage temperature T j, T stg °C ESD class JESD22-A114 HBM Soldering temperature °C IEC climatic category; DIN IEC 68-1 Value 55/150/56 -55 ... 150 ±20 248 -60 260 1C (1kV - 2kV) V DS -30 V R DS(on),max 8.0 mΩ 12.0 A Product Summary Type Package Marking BSO301SP H PG-DSO-8 301SP PG-DSO-8 Leadfree Yes Halogen free Yes packing dry I D -14.9 A VGS= 10 V VGS= 4.5 V Rev. 1.32 page 1 2010-05-12

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point R thJS - - 35 K/W Thermal resistance, junction - ambient R thJA minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s -- 5 0 6 cm2 cooling area1), steady state -- 8 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=V GS, Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, V DS=-30 V, V GS=0 V, T j=125 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-12 A - 8.8 12 mΩ Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-14.9 A - 6.3 8.0 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-14.9 A 22 44 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 1.32 page 2 2010-05-12

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 4430 5890 pF Output capacitance C oss - 1180 1570 Reverse transfer capacitance C rss - 970 1500 Turn-on delay time t d(on) -1 5 2 3 n s Rise time t r -2 2 3 3 Turn-off delay time t d(off) - 130 195 Fall time t f - 110 165 Gate Charge Characteristics3) Gate to source charge Q gs - -11 -15 nC Gate charge at threshold Q g(th) - -7.1 -9.5 Gate to drain charge Q gd - -35 Switching charge Q sw - -40 -59 Gate charge total Q g - -102 -136 Gate plateau voltage V plateau - -2.5 - V Output charge Q oss V DD=-15 V, V GS=0 V - -36 -48 Reverse Diode Diode continous forward current I S - - -2.1 A Diode pulse current I S,pulse - - -60 Diode forward voltage V SD V GS=0 V, I F=-14.9 A, Reverse recovery time t rr V R=15 V, I F=-14.9A, di F/dt =100 A/µs -3 2 4 0 n s Reverse recovery charge Q rr - -20 -25 nC 3) See figure 16 for gate charge parameter definition 2) See figure 3 T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 Ω V DD=-24 V, I D=-14.9 A, V GS=0 to -10 V Rev. 1.32 page 3 2010-05-12

1 Power dissipation 2 Drain current

P tot=f(T A); t p≤10 s I D=f(T A); |V GS|≥10 V; t p≤10 s 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 1 µs10 µs 100 µs 1 ms 10 ms DC 10210110010-1 102 101 100 10-1 10-2 0.01 0.1 100 0.1 1 10 100 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 102 101 100 10-1 10-2 0.01 0.1 100 t p [s] Z thJS [K/W] 0.5 1.5 2.5 0 40 80 120 160 T A [°C] P tot [W] 0 40 80 120 160 T A [°C] -I D [A] Rev. 1.32 page 4 2010-05-12

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 2.5 2.7 3.0 3.2 3.5 4.5 0 1 02 03 04 0 -I D [A] R DS(on) [mΩ] C °25C °150 01234 -V GS [V] -I D [A] 01 0 2 0 3 0 -I D [A] g fs [S] -2.3 V -2.5 V -2.7 V -3 V -3.2 V -3.5 V -4.5 V -10 V 0123 -V DS [V] -I D [A] Rev. 1.32 page 5 2010-05-12

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-14.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] Ciss Coss Crss 104 103 102 100 1000 10000 0 5 10 15 20 25 30 -V DS [V] C [pF] typ. min. max. 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 0.1 100 0 0.5 1 1.5 -V SD [V] I F [A] Rev. 1.32 page 6 2010-05-12

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-14.9 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA 6 15 0 20 40 60 80 100 120 -Q gate [nC] -V GS [V] -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g C °25 C °100 C °125 100 1 10 100 1000 t AV [µs] -I AV [A] Rev. 1.32 page 7 2010-05-12

P-DSO-8: Outline Rev. 1.32 page 8 2010-05-12

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 2010-05-12