BSO-302SN INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Single N channel
  • Enhancement mode
  • Avalanche rated
  • Logic Level
  • dv/dt rated Product Summary Drain source voltage VDS 30 V Drain-Source on-state resistance RDS(on) 0.013 Ω Continuous drain current ID 9.8 A Type Package Ordering Code BSO 302SN SO 8 Q67041-S4029 Continuous drain current TC = 25 ˚C ID 9.8 A Pulsed drain current TC = 25 ˚C 39.2IDpulse Avalanche energy, single pulse ID = 9.8 A, VDD = 25 V, RGS = 25 Ω mJEAS 250 Avalanche current,periodic limited by Tjmax IAR 9.8 A Avalanche energy, periodic limited by Tjmax mJEAR 0.2 Reverse diode dv/dt IS = 9.8 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 150 ˚C dv/dt 6 kV/µs Gate source voltage VVGS ± 20 Power dissipation TC = 25 ˚C Ptot 2 W Operating temperature ˚CTj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 55/150/56 Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Value Unit Preliminary Data BSO 302SN

Data Sheet 2 05.99 Thermal Characteristics Parameter Symbol UnitValues typ.min. max. Characteristics

25 K/WRthJS --Thermal resistance, junction - soldering point

75Rth(JA) -Thermal resistance @ 10 sec., min. footprint - 62.5Rth(JA) --Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter ValuesSymbol Unit typ.min. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 ˚C VDS = 30 V, VGS = 0 V, Tj = 150 ˚C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 4.5 V, ID = 8.6 A VGS = 10 V, ID = 9.8 A RDS(on) 0.012 0.008 0.017 0.013 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Data Sheet 3 05.99

Electrical Characteristics

max.min. typ. Characteristics STransconductance VDS≥2*ID*RDS(on)max , ID = 8.6 A 28 -14gfs pFCissInput capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz - 20401630 Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz 710-Coss 890 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 420335 - nsTurn-on delay time VDD = 15 V, VGS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω td(on) 3020 180trRise time VDD = 15 V, VGS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω - 120 55Turn-off delay time VDD = 15 V, VGS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω td(off) ns37- 110Fall time VDD = 15 V, VGS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω -tf ns72

Data Sheet 4 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit at Tj = 25 ˚C, unless otherwise specified min. typ. max. Dynamic Characteristics Gate charge at threshold VDD = 24 V, ID≥0,1 A, VGS = 0 to 1 V QG(th) - 2 3 nC Gate charge at Vgs=5V VDD = 24 V, ID = 9.8 A , VGS = 0 to 5 V Qg(5) - 37 55 Gate charge total VDD = 15 V, ID = 9.8 A, VGS = 0 to 10 V Qg - 60 90 nC Gate plateau voltage VDD = 24 V, ID = 9.8 A V(plateau) - 2.95 - V Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 9.8 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 39.2 Inverse diode forward voltage VGS = 0 V, IF = 19.6 A VSD - 0.9 1.6 V Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 70 105 ns Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Qrr - 80 120 µC

Data Sheet 5 05.99 Drain current ID = f (TA ) 0 20 40 60 80 100 120 ˚C 160 TA A BSO 302SN ID Power dissipation Ptot= f (TA) 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 W 2.6 BSO 302SN Ptot Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 ˚C 10 -1 10 0 10 1 10 2 V VDS -2 10 -1 10 0 10 1 10 2 10 A BSO 302SN ID R DS( on) = V DS DC 10 ms 1 ms 100 µs 10 µs tp = 2.2µs Transient thermal impedance ZthJA = f(tp) parameter : D= tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -1 10 0 10 1 10 2 10 K/W BSO 302SN ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Data Sheet 6 05.99 Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs VDS A BSO 302SN ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 2W l 10.0 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 8.6 A, VGS = 4.5 V -60 -20 20 60 100 140 ˚C 200 Tj 0.000 0.004 0.008 0.012 0.016 0.020 0.024 0.028 0.032 Ω 0.040 BSO 302SN RDS(on) typ 98% Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss

Data Sheet 7 05.99 Typ. transfer characteristics ID= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x ID x RDS(on) max VGS A ID Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 80 µA -60 -20 20 60 100 V 160 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 VGS(th) min typ max Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A BSO 302SN IF Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C typ Tj = 150 ˚C (98%)

Data Sheet 8 05.99 Avalanche Energy EAS = f (Tj) parameter: ID = 9.8 A, VDD = 25 V RGS = 25 Ω 20 40 60 80 100 120 ˚C 160 Tj 100 120 140 160 180 200 220 mJ 260 EAS Typ. gate charge VGS = f (QGate) parameter: ID puls = 9.8 A 0 10 20 30 40 50 60 70 nC 85 QGate V BSO 302SN VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 ˚C 180 Tj V BSO 302SN V(BR)DSS