BSN20_15 DIODES | Alldatasheet
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Document number: DS31898 Rev. 8 - 2 1 of 6 www.diodes.com September 2013 © Diodes Incorporated BSN20 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS R DS(ON) ID TA = +25°C 50V 1.8 @ VGS = 10V 500mA 2.0 @ VGS = 4.5V 450mA
Description
This new generation MOSFET has been designed to minimize the on- state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications.
Applications
Backlighting DC-DC Converters Power Management Functions Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Ordering Information (Note 5) Part Number Qualification Case Packaging BSN20-7 Standard SOT23 3000/Tape & Reel BSN20Q-7 Automotive SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 Top View E quivalent Circuit Top View Source Gate Drain D G S N20 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or = Year (ex: A = 2013) M = Month (ex: 9 = September) Chengdu A/T Site Shanghai A/T Site N20 YMN20 YM Y YM
Document number: DS31898 Rev. 8 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated BSN20 NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS 20 V Continuous Drain Current @ TSP = +25°C (Note 6) Steady State TA = +25°C TA = +100°C ID 500 300 mA Pulsed Drain Current @ TSP = +25°C (Notes 6 & 7) IDM 1.2 A Thermal Characteristics Characteristic Symbol Value Units Power Dissipation, @TA = +25°C (Note 6) PD 600 mW Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RJA 200 C/W Power Dissipation, @TSP = +25°C (Note 6) PD 920 mW Thermal Resistance, @TSP = +25°C (Note 6) RJSP 136 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 50 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C I DSS 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 0.4 1.0 1.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 1.3 1.6 1.8 2.0 V GS = 10V, ID = 0.22A VGS = 4.5V, ID = 0.1A Forward Transfer Admittance |Yfs| 40 320 mS V DS = 10V, ID = 0.1A Diode Forward Voltage VSD 1.0 1.5 V V GS = 0V, IS = 180mA Source (diode forward) Current IS 194 mA TSP = +25°C Peak Source (diode forward) Current ISM 1.2 A TSP = +25°C (Notes 3 & 4) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 21.8 40 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 5.6 15 pF Reverse Transfer Capacitance Crss 3.3 10 pF Gate Resistance Rg 49 VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 800 pC VGS = 10V, VDD = 25V, ID = 250mA Gate-Source Charge Qgs 100 pC Gate-Drain Charge Qgd 100 pC Turn-On Delay Time tD(on) 2.93 ns VDD = 30V, VGEN = 10V, RL = 150, RGEN = 50, ID = 0.2A Turn-On Rise Time tr 2.99 ns Turn-Off Delay Time tD(off) 9.45 ns Turn-Off Fall Time tf 8.3 ns Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing.
Document number: DS31898 Rev. 8 - 2 3 of 6 www.diodes.com September 2013 © Diodes Incorporated BSN20 NEW PRODUCT Fig 1. Normalized Total Power Dissipation as a Function of Solder Point Temperature 100 120 25 50 75 100 125 150 175 T , SOLDER POINT TEMPERATURE (°C)S P , POWER DISSIPATION (%)D 100 120I, N ORMALIZED CONTINUOUS CURRENT (%)DER Fig 2. Normalized Continuous Current vs. Solder Point Temperature 0 50 75 100 125 150 175 T , SOLDER POINT TEMPERATURE (°C)S Fig. 3 SOA, Safe Operation Area 0.1 1 10 100 V , DRAIN-SOURE VOLTAGE (V)DS R ds(on) Limited I, D RAIN CURRENT (A)D 0.001 0.01 0.1 T = 150°C T = 2 5 ° C Single Pulse J(MAX) A P = 10sW P = D CW P = 1 sW P = 100msW P = 10msW P = 1 m sW P = 100µsW P = 10µsW Z, TRANSIENT THERMAL RESISTANCE (°C/W)th(j-sp) 100 1,000 Fig. 4 Transient Thermal Response t , PULSE DURATION TIME (s)1 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = Single Pulse Duty Cycle, D = t /t12
Document number: DS31898 Rev. 8 - 2 4 of 6 www.diodes.com September 2013 © Diodes Incorporated BSN20 NEW PRODUCT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V , DRAIN-SOURCE VOLTAGE (V) Fig. 5 Drain-Source Current vs. Drain-Source Voltage DS I, D RAIN-SOURCE CURRENT (A)D V = 3.0VGS V = 4.0VGS V = 4.5VGS V = 10VGS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 V , GATE-SOURCE VOLTAGE (V) Fig. 6 Transfer Characteristics GS I, D RAIN-SOURCE CURRENT (A)D
150 C° 25 C°
V = 5 VDS I , DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5VGS V = VGS 10 V = . 5 VGS 3 V = 4 . VGS 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Fig. 8 Drain-Source On-Resistance vs. Junction Temperature J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5VGS V = 10VGS I = AD 200m I = 500 AD m 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) Fig. 9 Gate Threshold Voltage vs. Junction Temperature J V, GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1 . 0 m AD I = AD 250µ 0 0.5 1 1.5 2 2.5 3 3.5 4 V , GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics GS 0.1 0.2 0.3 0.4 0.5I, D RAIN-SOURCE CURRENT (A)D -55 C° 150 C° 25 C°
125 C° 85 C°
Document number: DS31898 Rev. 8 - 2 5 of 6 www.diodes.com September 2013 © Diodes Incorporated BSN20 NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Fig. 11 Typical Transfer Characteristic 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 I , DRAIN-CURRENT (A)D g , FORWARD TRANSCONDUCTANCE (s)fs 25 C° 150 C° 0 5 10 15 20 25 30 35 40 V , DRAIN-SOURCE VOLTAGE (V) Fig. 12 Capacitance vs. Drain-Source Voltage DS C, CAPACITANCE (pF) Crss Coss Ciss Fig. 13 Source Current vs. Diode Forward Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , DIODE FORWARD VOLTAGE (V)SD I, S OURCE CURRENT (A)S 25 C° 150 C° SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° All Dimensions in mm J K1 K GAUGE PLANE 0. 25 H L M All 7° A C B D GF a
Document number: DS31898 Rev. 8 - 2 6 of 6 www.diodes.com September 2013 © Diodes Incorporated BSN20 NEW PRODUCT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E Y CZ