BSN20 SKTECHNOLGY | Alldatasheet
Document overview
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Technical content
V4 ei: et SHIKUES N-Channel Enhancement Mode MOSFET Feature asNzo e 50VI0.1A, RDS(ON)=3.52(MAX) @Vos=5V_ Id=0.1A Rosin) = 102 (MAX) @Vos=2.75V. Id = 0.14 [>| © Super High dense cell design for extremely low Rosco) J © — Reliable and Rugged. ( :) © Low Threshold Voltage ( 0.5V—I.5V ) Make it Ideal for Low Voltage Applications. : © — SOT-23 for Surface Mount Package. o [s] a SOT-23
Applications
© Power Management in DC/DC Converters, Portable and Battery-powered Products. Absolute Maximum Ratings Ta=25°C_ Unless Otherwise noted a Se [oncom | Electrical Characteristics Ta=25'C_Unless Otherwise noted Off Characteristies a Tc cata coen tee | vosse | _vosavvonev ‘| [wo | m | a OC [iaiedatonnse [50 | _vacwwen |. T= [| REV.08 1 of 4
S% af B® cnicuee BSN20 Outline dimensions Unit: mm at | min [mas | | tt} Le Aal | bf 030 | 050 | | oor F010 i [ov oe F000 REV.08 4 of 4