BSN20

BSN20 KEXIN | Alldatasheet

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TrenchMOS™ t echnology Very fast switching Logic level compatible Subminiature surface mount package. Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 50 VGS ±20 173 110 IDM 700 Power dissipation TA = 25℃ PD 0.83 W RthJA 350 RthJP 150 TJ, Tstg 5+150 V Operating and storage junction temperature range Thermal resistance from junction to solder point K/W Ta = 100℃ ID mA Parameter Continuous Drain Current Ta = 25℃ Maximum Junction-to-Ambient Drain-source voltage Gate-Source Voltage Pulsed Drain Current d g s - 6 N-Channel MOSFET BSN20 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Gate 2.Source 3.Drain 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Features

2 www.kexin.com.cn Electrical Characteristics Ta = 25¥ Parameter Symbol Testconditons Min Typ Max Unit Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=10 µA 50 Gate-threshold voltage VGS(th) VDS=VGS, ID=1 mA 0.4 Gate-body leakage lGSS VDS=0 V, VGS= ±20 V ±100 nA VDS=40 V, VGS=0 V 1 VDS=40 V, VGS=0 V, Ta = 150¥ 10 VGS=10 V, ID=100 mA 2.8 15 VGS=5 V, ID=100 mA 3.8 20 Forward tran conductance gfs VDS=10 V, ID=100 mA 40 170 ms Input capacitance Ciss 17 25 Output capacitance COSS 7 15 Reverse transfer capacitance CrSS 4 8 Turn-on Time td(0n) 1.7 8 Turn-off Time td(off) 8 15 Reverse recovery time trr 30 Recovered charge Qrr 30 nC Diode forward voltage VSD IS=180 mA, VGS=0 V 0.9 1.5 V IS=180mA;dI/dt=100A/µs;VGS=0V; VDS=25V ns uA Ω pF Drain-source on-resistance IDSS RDS(0n) VDD=20 V, RD=180Ω RGS=50 Ω,VGS=10 V RG=50Ω VDS=10 V, VGS=0 V, f=1 MHz V Zero gate voltage drain current Marking Marking 702. N-Channel MOSFET BSN20 ■ Features 1.5 2

3www.kexin.com.cn Typical Characteristics VGS ≥ 5 V Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 100 120 0 25 50 75 100 125 150 175 Pder Tsp (oC) (%) 100 120 0 25 50 75 100 125 150 175 Ider (%) Tsp (oC) Pder Ptot P tot 25 C° Ider ID I D 25 C° 10-2 10-1 01011 2VDS (V) ID (A) D.C. 100 ms 10 ms RDSon = VDS/ ID 1 ms tp = 10 µs 100 µs Tsp = 25oC tp tp T P t Tδ = Mounted on a metal clad substrate. Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 03aa47 Zth(j-sp) (K/W) δ tp tp T P t Tδ = N-Channel MOSFET BSN20 ̵ḤḤḤ̶ ̵ḤḤḤ̶

www.kexin.com.cn Tj = 25 ° TC j = 25 °C and 150 °C; VDS ≥ ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj = 25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. ID (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 7 8 9 10 VGS (V) ID (A) VDS > ID X RDSon Tj = 25oC 150oC ID (A) RDSon (Ω) VGS = 10V Tj = 25oC4.5 V 4 V 3.5V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -60 -20 20 60 100 140 180 Tj (oC) a a RDSon RDSon 25 C° ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj (oC) VGS(th) (V) typ min VGS (V) ID (A) typmin 10-6 10-5 10-4 10-3 10-2 10-1 N-Channel MOSFET BSN20 ■ Typical Characterisitics ̵ḤḤḤ̶

5www.kexin.com.cn Tj = 25 °C and 150 °C; VDS ≥ ID × RDSon VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. gfs (S) 102 10-1 1 10 102VDS (V) Ciss, Coss, Crss (pF) Ciss Coss Crss Tj = 25 °C and 150 °C; VGS = 0 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. IS (A) N-Channel MOSFET BSN20 ■ Typical Characterisitics