BSN20
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- Manufacturer or author: Diodes Incorporated
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Document number: DS31898 Rev. 10 - 2 1 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)DSS RDS(ON) ID TA = +25° C 50V 1.8 @ VGS = 10V 500mA 2.0 @ VGS = 4.5V 450mA Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting DC-DC Converters Power Management Functions Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Qualification Case Packaging BSN20-7 Standard SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2009 - 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 Code W - G H I J K L M N O P Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D N20 YM SOT23 Top View Internal Schematic Top View N20 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: G = 2019) M = Month (ex: 9 = September) D G S D S G
Document number: DS31898 Rev. 10 - 2 2 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS 20 V Continuous Drain Current @ TSP = +25° C (Note 5) Steady State TA = +25° C TA = +100° C ID 500 300 mA Pulsed Drain Current @ TSP = +25° C (Notes 5 & 6) IDM 1.2 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation, @TA = +25° C (Note 5) PD 600 mW Thermal Resistance, Junction to Ambient @TA = +25° C (Note 5) RJA 200 C/W Power Dissipation, @TSP = +25° C (Note 5) PD 920 mW Thermal Resistance, @TSP = +25° C (Note 5) RJSP 136 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 50 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25° C IDSS — — 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS — — 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.4 1.0 1.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 1.3 1.6 1.8 2.0 VGS = 10V, ID = 0.22A VGS = 4.5V, ID = 0.1A Forward Transfer Admittance |Yfs| 40 320 — mS VDS = 10V, ID = 0.1A Diode Forward Voltage VSD — 1.0 1.5 V VGS = 0V, IS = 180mA Source (Diode Forward) Current IS — — 194 mA TSP = +25°C Peak Source (Diode Forward) Current ISM — — 1.2 A TSP = +25°C DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 21.8 40 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 5.6 15 pF Reverse Transfer Capacitance Crss — 3.3 10 pF Gate Resistance Rg — 49 — VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 800 — pC VGS = 10V, VDD = 25V, ID = 250mA Gate-Source Charge Qgs — 100 — pC Gate-Drain Charge Qgd — 100 — pC Turn-On Delay Time tD(ON) — 2.93 — ns VDD = 30V, VGEN = 10V, RL = 150, RGEN = 50, ID = 0.2A Turn-On Rise Time tR — 2.99 — ns Turn-Off Delay Time tD(OFF) — 9.45 — ns Turn-Off Fall Time tF — 8.3 — ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing.
Document number: DS31898 Rev. 10 - 2 3 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT Fig 1. Normalized Total Power Dissipation as a Function of Solder Point Temperature 100 120 25 50 75 100 125 150 175 T , SOLDER POINT TEMPERATURE ( 癈)S P , POWER DISSIPATION (%)D 100 120I , NORMALIZED CONTINUOUS CURRENT (%)DER Fig 2. Normalized Continuous Current vs. Solder Point Temperature 0 50 75 100 125 150 175 T , SOLDER POINT TEMPERATURE ( 癈)S Fig. 3 SOA, Safe Operation Area 0.1 1 10 100 V , DRAIN-SOURE VOLTAGE (V)DS R ds(on) Limited I , DRAIN CURRENT (A)D 0.001 0.01 0.1 T = 150 癈 T = 25 癈 Single Pulse J(MAX) A P = 10sW P = DCW P = 1sW P = 100msW P = 10msW P = 1msW P = 100 祍W P = 10 祍W Z , TRANSIENT THERMAL RESISTANCE (°C/W)th(j-sp) 100 1,000 Fig. 4 Transient Thermal Response t , PULSE DURATION TIME (s)1 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = Single Pulse Duty Cycle, D = t /t12 (°C) (°C) 150°C 25°C 100µs 10µs
Document number: DS31898 Rev. 10 - 2 4 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V , DRAIN-SOURCE VOLTAGE (V) Fig. 5 Drain-Source Current vs. Drain-Source Voltage DS I , DRAIN-SOURCE CURRENT (A)D V = 3.0VGS V = 4.0VGS V = 4.5VGS V = 10VGS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 V , GATE-SOURCE VOLTAGE (V) Fig. 6 Transfer Characteristics GS I , DRAIN-SOURCE CURRENT (A)D
150 C° 25 C°
V = 5VDS I , DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5VGS V = VGS 10 V = .5VGS 3 V = 4. VGS 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( 癈) Fig. 8 Drain-Source On-Resistance vs. Junction Temperature J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5VGS V = 10VGS I = AD 200m I = 500 AD m 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( 癈) Fig. 9 Gate Threshold Voltage vs. Junction Temperature J V , GATE THRESHOLD VOLTAGE (V)GS(TH) I = 1.0mAD I = AD 250? 0 0.5 1 1.5 2 2.5 3 3.5 4 V , GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics GS 0.1 0.2 0.3 0.4 0.5I , DRAIN-SOURCE CURRENT (A)D -55 C° 150 C° 25 C°
125 C° 85 C°
(°C) (°C) 250µA
Document number: DS31898 Rev. 10 - 2 5 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT Fig. 11 Typical Transfer Characteristic 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 I , DRAIN-CURRENT (A)D g , FORWARD TRANSCONDUCTANCE (s)fs 25 C° 150 C° 0 5 10 15 20 25 30 35 40 V , DRAIN-SOURCE VOLTAGE (V) Fig. 12 Capacitance vs. Drain-Source Voltage DS C, CAPACITANCE (pF) Crss Coss Ciss Fig. 13 Source Current vs. Diode Forward Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , DIODE FORWARD VOLTAGE (V)SD I , SOURCE CURRENT (A)S 25 C° 150 C°
Document number: DS31898 Rev. 10 - 2 6 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C
Document number: DS31898 Rev. 10 - 2 7 of 7 www.diodes.com December 2019 © Diodes Incorporated BSN20 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the ex press written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diodes Incor porated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated www.diodes.com