BSM200GA120DLC EUPEC | Alldatasheet
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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom TC = 80 °C I C,nom. 200 A DC-collector current TC = 25 °C I C 370 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C I CRM 400 A Gesamt-Verlustleistung total power dissipation TC =25°C, Transistor P tot 1470 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES +/- 20V V Dauergleichstrom DC forward current IF 200 A Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms I FRM 400 A Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 6,84 kA2s Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung IC = 200A, VGE = 15V, Tvj = 25°C V CE sat - 2,1 2,6 V collector-emitter saturation voltage IC = 200A, VGE = 15V, Tvj = 125°C - 2,4 t.b.d. V Gate-Schwellenspannung gate threshold voltage IC = 8mA, VCE = VGE , Tvj = 25°C V GE(th) 4,5 5,5 6,5 V Gateladung Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V C ies -1 3- n F Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V C res - t.b.d. - nF Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C I CES - 20 500 µA collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 500 - µA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C I GES - - 400 nA prepared by: Mark Münzer date of publication: 12.02.1999 approved by: Jens Thurau revision: 1 1(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) IC = 200A, VCC = 600V turn on delay time (inductive load) VGE = ±15V, RG = 4,7Ω , Tvj = 25°C t d,on - 0,09 - µs VGE = ±15V, RG = 4,7Ω , Tvj = 125°C - 0,09 - µs Anstiegszeit (induktive Last) IC = 200A, VCC = 600V rise time (inductive load) VGE = ±15V, RG = 4,7Ω , Tvj = 25°C t r - 0,09 - µs VGE = ±15V, RG = 4,7Ω , Tvj = 125°C - 0,1 - µs Abschaltverzögerungszeit (ind. Last) IC = 200A, VCC = 600V turn off delay time (inductive load) VGE = ±15V, RG = 4,7Ω , Tvj = 25°C t d,off - 0,54 - µs VGE = ±15V, RG = 4,7Ω , Tvj = 125°C - 0,59 - µs Fallzeit (induktive Last) IC = 200A, VCC = 600V fall time (inductive load) VGE = ±15V, RG = 4,7Ω , Tvj = 25°C t f - 0,06 - µs VGE = ±15V, RG = 4,7Ω , Tvj = 125°C - 0,09 - µs Einschaltverlustenergie pro Puls IC = 200A, VCC = 600V, VGE = 15V turn-on energy loss per pulse R G = 4,7Ω , Tvj = 125°C, LS = 90nH E on - 18 - mWs Abschaltverlustenergie pro Puls IC = 200A, VCC = 600V, VGE = 15V turn-off energy loss per pulse R G = 4,7Ω , Tvj = 125°C, LS = 90nH E off - 25 - mWs Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 4,7Ω SC Data TVj≤125°C, VCC =900V, VCEmax =VCES -LsCE ·dI/dt I SC - 1250 - A Modulinduktivität stray inductance module LsCE - 16 - nH Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chipTC =25°C R CC‘+EE‘ - 0,5 - m Ω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung IF = 200A, VGE = 0V, Tvj = 25°C V F - 1,8 2,3 V forward voltage IF = 200A, VGE = 0V, Tvj = 125°C - 1,7 t.b.d. V Rückstromspitze IF = 200A, - diF/dt = 2100A/µsec peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C I RM - 180 - A VR = 600V, VGE = -15V, Tvj = 125°C - 240 - A Sperrverzögerungsladung IF = 200A, - diF/dt = 2100A/µsec recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Q r - 24 - µAs VR = 600V, VGE = -15V, Tvj = 125°C - 43 - µAs Abschaltenergie pro Puls IF = 200A, - diF/dt = 2100A/µsec reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C E rec - 7 - mWs VR = 600V, VGE = -15V, Tvj = 125°C - 16 - mWs 2(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thJC - - 0,085 K/W thermal resistance, junction to case Diode/Diode, DC - - 0,15 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste = 1 W/m * K / λgrease = 1 W/m * K R thCK - 0,010 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 150 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O 3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung screw M5 M1 3 6 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminals M6 2,5 5,0 Nm terminal connection torque terminals M4 1,1 2,0 Nm Gewicht weight G 300 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data IC [A] VCE [V] IC [A] VCE [V] 120 160 200 240 280 320 360 400 Tj = 25°C Tj = 125°C Ausgangskennlinie (typisch) IC = f (VCE ) Output characteristic (typical) VGE = 15V 120 160 200 240 280 320 360 400 VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V Ausgangskennlinienfeld (typisch) IC = f (VCE ) Output characteristic (typical) Tvj = 125°C 4(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data IC [A] VGE [V] IF [A] VF [V] 120 160 200 240 280 320 360 400 56789 1 0 1 1 1 2 Tj = 25°C Tj = 125°C Übertragungscharakteristik (typisch) IC = f (VGE ) Transfer characteristic (typical) VCE = 20V 120 160 200 240 280 320 360 400 Tj = 25°C Tj = 125°C Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF) Forward characteristic of inverse diode (typical) 5(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data E [mJ] IC [A] E [mJ] R G [Ω ] 0 40 80 120 160 200 240 280 320 360 400 Eoff Eon Erec Schaltverluste (typisch) Eon = f (IC ) , Eoff = f (IC ) , Erec = f (IC ) Switching losses (typical) VGE =15V, Rgon = Rgoff = 4,7 Ω , VCE = 600V, Tj = 125°C 100 0 5 10 15 20 25 30 Eoff Eon Erec Schaltverluste (typisch) Eon = f (RG ) , Eoff = f (RG ) , Erec = f (RG ) Switching losses (typical) VGE =15V , IC = 200A , VCE = 600V , Tj = 125°C 6(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data ZthJC [K / W] t [sec] i 1234 ri [K/kW] : IGBT 9,51 28,77 37,49 9,23 τi [sec] : IGBT 0,00002 0,004 0,048 0,500 ri [K/kW] : Diode 19,63 51,99 56,73 21,65 τi [sec] : Diode 0,002 0,03 0,072 0,682 IC [A] VCE [V] Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 4,7 Ohm, Tvj= 125°C Transienter Wärmewiderstand ZthJC = f (t) Transient thermal impedance 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 1200 1400 IC,Modul IC,Chip 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 Zth:Diode Zth:IGBT 7(8) DB_BSM200GA120DLC_V.xls
Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GA120DLC vorläufige Daten preliminary data 28,5 2223 16,1 ø6,4 20 29 106,4 2 1 Single Switch 62 IS6 8(8) DB_BSM200GA120DLC_V.xls