BSM15GD120DLCE3224

BSM15GD120DLCE3224 EUPEC | Alldatasheet

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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES 1200 V Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 15 A DC-collector current TC = 25 °C IC 35 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, TC = 80°C ICRM 30 A Gesamt-Verlustleistung total power dissipation T C=25°C, Transistor Ptot 145 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 20V V Dauergleichstrom DC forward current I F 15 A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms IFRM 30 A Grenzlastintegral der Diode I 2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 93 A2s Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. V ISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung IC = 15A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V collector-emitter saturation voltage IC = 15A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V Gate-Schwellenspannung gate threshold voltage I C = 0,6mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = -15V...+15V QG - 0,16 - µC Eingangskapazität input capacitance f = 1MHz,T vj = 25°C,VCE = 25V, VGE = 0V Cies - 1 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,T vj = 25°C,VCE = 25V, VGE = 0V Cres - 0,07 - nF Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - 2 76 µA collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 200 - µA Gate-Emitter Reststrom gate-emitter leakage current V CE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: Mark Münzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) IC = 15A, VCC = 600V turn on delay time (inductive load) VGE = ±15V, RG = 56Ω , Tvj = 25°C td,on - 0,07 - µs VGE = ±15V, RG = 56Ω , Tvj = 125°C - 0,08 - µs Anstiegszeit (induktive Last) IC = 15A, VCC = 600V rise time (inductive load) VGE = ±15V, RG = 56Ω , Tvj = 25°C tr - 0,05 - µs VGE = ±15V, RG = 56Ω , Tvj = 125°C - 0,05 - µs Abschaltverzögerungszeit (ind. Last) IC = 15A, VCC = 600V turn off delay time (inductive load) VGE = ±15V, RG = 56Ω , Tvj = 25°C td,off - 0,3 - µs VGE = ±15V, RG = 56Ω , Tvj = 125°C - 0,34 - µs Fallzeit (induktive Last) IC = 15A, VCC = 600V fall time (inductive load) VGE = ±15V, RG = 56Ω , Tvj = 25°C tf - 0,03 - µs VGE = ±15V, RG = 56Ω , Tvj = 125°C - 0,05 - µs Einschaltverlustenergie pro Puls IC = 15A, VCC = 600V, VGE = 15V turn-on energy loss per pulse RG = 56Ω , Tvj = 125°C, LS = 140nH Eon - 2 - mWs Abschaltverlustenergie pro Puls IC = 15A, VCC = 600V, VGE = 15V turn-off energy loss per pulse RG = 56Ω , Tvj = 125°C, LS = 140nH Eoff - 1,5 - mWs Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 56Ω SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 130 - A Modulinduktivität stray inductance module LsCE - 60 - nH Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip TC=25°C R CC‘+EE‘ - 5,9 - m Ω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung IF = 15A, VGE = 0V, Tvj = 25°C V F - 1,8 2,3 V forward voltage IF = 15A, VGE = 0V, Tvj = 125°C - 1,7 2,2 V Rückstromspitze IF = 15A, - diF/dt = 380A/µsec peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C I RM -1 4-A VR = 600V, VGE = -15V, Tvj = 125°C -1 8-A Sperrverzögerungsladung IF = 15A, - diF/dt = 380A/µsec recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Q r - 1,5 - µAs VR = 600V, VGE = -15V, Tvj = 125°C - 3,4 - µAs Abschaltenergie pro Puls IF = 15A, - diF/dt = 380A/µsec reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C E rec - 0,6 - mWs VR = 600V, VGE = -15V, Tvj = 125°C - 1,3 - mWs 2(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,86 K/W thermal resistance, junction to case Diode/Diode, DC - - 1,50 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste = 1 W/m * K / λgrease = 1 W/m * K RthCK - 0,02 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 150 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung terminals M5 M1 3 6 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse M2 Nm terminal connection torque Gewicht weight G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 IC [A] VCE [V] IC [A] VCE [V] Tj = 25°C Tj = 125°C Ausgangskennlinie (typisch) IC = f (VCE) Output characteristic (typical) VGE = 15V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V Ausgangskennlinienfeld (typisch) IC = f (VCE) Output characteristic (typical) Tvj = 125°C 4(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 IC [A] VGE [V] IF [A] VF [V] 56789 1 0 1 1 1 2 Tj = 25°C Tj = 125°C Übertragungscharakteristik (typisch) IC = f (VGE) Transfer characteristic (typical) VCE = 20V Tj = 25°C Tj = 125°C Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF) Forward characteristic of inverse diode (typical) 5(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 E [mJ] IC [A] E [mJ] RG [ΩΩΩΩ ] 0 5 10 15 20 25 30 Eoff Eon Erec Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =56 ΩΩΩΩ , VCE = 600V, Tj = 125°C 1,5 4,5 7,5 0 60 120 180 240 300 360 420 480 Eoff Eon Erec Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) Switching losses (typical) VGE=15V , IC = 15A , VCE = 600V , Tj = 125°C 6(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 ZthJC [K / W] t [sec] i 1234 ri [K/kW] : IGBT 388 326,8 118,7 26,5 τi [sec] : IGBT 0,048 0,049 0,055 1,149 ri [K/kW] : Diode 164,3 438,7 778,6 118,4 τi [sec] : Diode 0,003 0,018 0,043 0,312 IC [A] VCE [V] Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 56 Ohm, Tvj= 125°C Transienter Wärmewiderstand ZthJC = f (t) Transient thermal impedance 0 200 400 600 800 1000 1200 1400 IC,Modul IC,Chip 0,01 0,1 0,001 0,01 0,1 1 10 100 Zth:Diode Zth:IGBT 7(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 8(8) Seriendatenblatt_BSM15GD120DLC-E3224.xls