BSM150GB170DLC

BSM150GB170DLC EUPEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1700 V Kollektor-Dauergleichstrom TC = 80 °C I C,nom. 150 A DC-collector current TC = 25 °C I C 300 A Periodischer Kollektor Spitzenstrom repetitive peak collctor current tP = 1 ms, TC = 80°C I CRM 300 A Gesamt-Verlustleistung total power dissipation TC =25°C, Transistor P tot 1250 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES +/- 20V V Dauergleichstrom DC forward current IF 150 A Periodischer Spitzenstrom repetitive peak forw. current tp = 1 ms IFRM 300 A Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t 4.500 A2s Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 3,4 kV Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung IC = 150A, VGE = 15V, Tvj = 25°C V CE sat - 2,6 3,2 V collector-emitter saturation voltage IC = 150A, VGE = 15V, Tvj = 125°C - 3,1 3,6 V Gate-Schwellenspannung gate threshold voltage IC = 7mA, VCE = VGE , Tvj = 25°C V GE(th) 4,5 5,5 6,5 V Gateladung gate charge VGE = -15V ... +15V Q G - 1,8 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V C ies -1 0- n F Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V C res - 0,5 - nF VCE = 1700V, VGE = 0V, Tvj = 25°C I CES - 0,05 0,3 mA VCE = 1700V, VGE = 0V, Tvj = 125°C -4 m A Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C I GES - - 200 nA prepared by: Regine Mallwitz date of publication: 28.11.2000 approved by: Chr. Lübke; 28.11.2000 revision: 2 (Series) Kollektor-Emitter Reststrom collector-emitter cut-off current 1(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) IC = 150A, VCE = 900V turn on delay time (inductive load) VGE = ±15V, RG = 10W , Tvj = 25°C t d,on - 0,1 - µs VGE = ±15V, RG = 10W , Tvj = 125°C - 0,1 - µs Anstiegszeit (induktive Last) IC = 150A, VCE = 900V rise time (inductive load) VGE = ±15V, RG = 10W , Tvj = 25°C t r - 0,1 - µs VGE = ±15V, RG = 10W , Tvj = 125°C - 0,1 - µs Abschaltverzögerungszeit (ind. Last) IC = 150A, VCE = 900V turn off delay time (inductive load) VGE = ±15V, RG = 10W , Tvj = 25°C t d,off - 0,8 - µs VGE = ±15V, RG = 10W , Tvj = 125°C - 0,9 - µs Fallzeit (induktive Last) IC = 150A, VCE = 900V fall time (inductive load) VGE = ±15V, RG = 10W , Tvj = 25°C t f - 0,03 - µs VGE = ±15V, RG = 10W , Tvj = 125°C - 0,03 - µs Einschaltverlustenergie pro Puls IC = 150A, VCE = 900V, VGE = 15V turn-on energy loss per pulse R G = 10W , Tvj = 125°C, LS = 60nH E on - 70 - mWs Abschaltverlustenergie pro Puls IC = 150A, VCE = 900V, VGE = 15V turn-off energy loss per pulse R G = 10W , Tvj = 125°C, LS = 60nH E off - 46 - mWs Kurzschlußverhalten tP £ 10µsec, VGE £ 15V SC Data TVj£125°C, VCC =1000V, VCEmax =VCES -LsCE ·dI/dt I SC - 600 - A Modulinduktivität stray inductance module LsCE - 30 - nH Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm R CC'+EE' - 0,6 - m W Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung IF = 150A, VGE = 0V, Tvj = 25°C V F - 2,1 2,5 V forward voltage IF = 150A, VGE = 0V, Tvj = 125°C - 2,1 2,5 V Rückstromspitze IF = 150A, - diF/dt = 1700A/µsec peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C I RM - 110 - A VR = 900V, VGE = -10V, Tvj = 125°C - 130 - A Sperrverzögerungsladung IF = 150A, - diF/dt = 1700A/µsec recovered charge VR = 900V, VGE = -10V, Tvj = 25°C Q r - 35 - µAs VR = 900V, VGE = -10V, Tvj = 125°C - 60 - µAs Abschaltenergie pro Puls IF = 150A, - diF/dt = 1700A/µsec reverse recovery energy VR = 900V, VGE = -10V, Tvj = 25°C E rec -1 5- VR = 900V, VGE = -10V, Tvj = 125°C - 30 - mWs 2(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thJC - - 0,1 K/W thermal resistance, junction to case Diode/Diode, DC - - 0,24 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module lPaste = 1 W/m*K / lgrease = 1 W/m*K R thCK - - 0,012 K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O 3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung max. 5 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M6 max. 5 Nm Gewicht weight G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC IC [A] VCE [V] IC [A] VCE [V] 100 150 200 250 300 Tj = 25°C Tj = 125°C Ausgangskennlinie (typisch) IC = f (VCE ) Output characteristic (typical) VGE = 15V 100 150 200 250 300 VGE = 19V VGE = 15V VGE = 13V VGE = 11V VGE = 9V Ausgangskennlinienfeld (typisch) IC = f (VCE ) Output characteristic (typical) Tvj = 125°C 4(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC IC [A] VGE [V] IF [A] VF [V] 100 150 200 250 300 5 6 7 8 9 10 11 12 13 Tj = 25°C Tj = 125°C Übertragungscharakteristik (typisch) IC = f (VGE ) Transfer characteristic (typical) VCE = 20V 100 150 200 250 300 Tj = 25°C Tj = 125°C Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF) Forward characteristic of inverse diode (typical) 5(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC E [mJ] IC [A] E [mJ] R G [W ] 100 150 200 250 0 50 100 150 200 250 300 Eoff Eon Erec Schaltverluste (typisch) Eon = f (IC ) , Eoff = f (IC ) , Erec = f (IC ) Switching losses (typical) R gon = Rgoff =10W , VCE = 900V, Tj = 125°C 100 120 140 160 0 1 02 03 04 05 0 Eoff Eon Erec Schaltverluste (typisch) Eon = f (RG ) , Eoff = f (RG ) , Erec = f (RG ) Switching losses (typical) IC = 150A , VCE = 900V , Tj = 125°C 6(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC t [sec] i 1234 ri [K/kW] : IGBT 11,16 32,28 48,09 8,47 ti [sec] : IGBT 0,0047 0,0356 0,0613 0,4669 ri [K/kW] : Diode 44,67 88,51 88,51 18,32 ti [sec] : Diode 0,0062 0,0473 0,0473 0,2322 IC [A] VCE [V] ZthJC [K / W] Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) R g = 10 Ohm, Tvj= 125°C 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 1600 1800 IC,Modul IC,Chip Transienter Wärmewiderstand ZthJC = f (t) Transient thermal impedance 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 Zth:Diode Zth:IGBT 7(8) BSM150GB170DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GB 170 DLC vorläufige Daten preliminary data 8(8) BSM150GB170DLC