BSL316C_14 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Complementary P + N channel
  • Enhancement mode
  • Logic level (4.5V rated)
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant
  • Halogen free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Symbol Conditions Unit P N Continuous drain current I D T A=25 °C -1.5 1.4 A T A=70 °C -1.2 1.1 Pulsed drain current I D,pulse T A=25 °C -6.0 5.6 Avalanche energy, single pulse E AS P: I D=-1.5 A, N: I D=1.4 A, R GS=25 W 11 3.7 mJ Gate source voltage V GS V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-A114-HBM Soldering temperature T solder °C IEC climatic category; DIN IEC 68-1 Value -55 ... 150 55/150/56 260 ±20 0.5 1) Remark: only one of both transistors active 0 (<250V) PG-TSOP6 Type Package Tape and Reel Information Marking Lead Free Packing BSL316C PG-TSOP-6 H6327: 3000 pcs / reel sPJ Yes Non dry P N VDS -30 30 V RDS(on),max VGS=±10 V 150 160 mW VGS=±4.5 V 270 280 ID -1.5 1.4 A Product Summary 5 6 Rev. 2.3 page 1 2014-07-21

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics P N Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-250 µA - - -30 V N V GS=0 V, I D=250 µA 30 - - Gate threshold voltage P V GS(th) V DS=V GS, I D=-11 µA -2 -1.5 -1 N V DS=V GS, I D=3.7 µA 1.2 1.6 2 Zero gate voltage drain current P I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 µA N V DS=30 V, V GS=0 V, T j=25 °C - - 1 P V DS=-30 V, V GS=0 V, N V DS=30 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current P N P R DS(on) V GS=-4.5 V, I D=-

1.1 A - 177 270 mW

N V GS=4.5 V, I D=-1.1 A - 191 280 P V GS=-10 V, I D=-1.5 A - 113 150 N V GS=10 V, I D=1.4 A - 119 160 Transconductance P g fs |V DS|>2|I D|R DS(on)max, N |V DS|>2|I D|R DS(on)max, I D=1.1 A - 2.3 - ±100 R thJA nAI GSS -V GS=±20 V, V DS=0 V - Values 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB Drain-source on-state resistance Thermal resistance, junction - ambient1) - - 250minimal footprint 2) K/W Rev. 2.3 page 2 2014-07-21

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance P C iss - 212 282 pF N - 71 94 Output capacitance P C oss - 69 91 N - 26 35 Reverse transfer capacitance P Crss - 56 84 N - 5 7 Turn-on delay time P t d(on) - 5.0 - ns N - 3.4 - Rise time P t r - 6.5 - N - 2.3 - Turn-off delay time P t d(off) - 14.3 - N - 5.8 - Fall time P t f - 7.5 - N - 1.0 - Gate Charge Characteristics Gate to source charge P Q gs - -0.6 - nC Gate to drain charge Q gd - -1.2 - Switching charge Q g - -2.4 - Gate plateau voltage V plateau - -2.9 - Gate to source charge N Q gs - 0.3 - Gate to drain charge Q gd - 0.2 - Switching charge Q g 0.6 - Gate plateau voltage V plateau - 3.4 - V DD=15 V, I D=1.4 A, V GS=0 to 5 V Values V GS=0 V, P: V DS=-15 V, N: V DS= 15 V, f =1 MHz P: V DD=-15 V, V GS=-10 V, R G=6 W, I D=-1.5 A N: V DD=15 V, V GS=10 V, R G=6 W, I D=1.4 A V DD=-15 V, I D=-1.5 A, V GS=0 to -5 V Rev. 2.3 page 3 2014-07-21

Parameter Symbol Conditions Unit min. typ. max. Reverse Diode P I S - - -0.5 A N - - 0.5 Diode pulse current P I S,pulse - - -6.0 N - - 5.6 Diode forward voltage P V SD V GS=0 V, I F=-1.5 A, N V GS=0 V, I F=1.4 A, T j=25 °C - 0.86 1.1 Reverse recovery time P t rr - 8.2 - ns N - 9.1 - Reverse recovery charge P Q rr - 2.1 - nC N - 2.6 - Diode continuous forward current Values T C=25 °C V R=±15 V, I F=I S, di F/dt =100 A/µs Rev. 2.3 page 4 2014-07-21

1 Power dissipation (P) 2 Power dissipation (N)

P tot=f(T A) P tot=f(T A)

3 Drain current (P) 4 Drain current (N)

I D=f(T A) I D=f(T A) parameter: V GS≤-10 V parameter: V GS≥10 V 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 Ptot [W] TA [°C] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 40 80 120 160 ID [A] TA [°C] 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 Ptot [W] TA [°C] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 40 80 120 160 -ID [A] TA [°C] Rev. 2.3 page 5 2014-07-21

5 Safe operating area (P) 6 Safe operating area (N)

I D=f(V DS); T A=25 °C; D =0 I D=f(V DS); T A=25 °C; D =0 parameter: t p parameter: t p 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N) Z thJA=f(t p) Z thJA=f(t p) parameter: D =t p/T parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 10-2 10-1 100 101 ID [A] VDS [V] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 102 100 101 102 103 ZthJA [K/W] tp [s] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 10-2 10-1 100 101 -ID [A] -VDS [V] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 102 100 101 102 103 ZthJA [K/W] tp [s] Rev. 2.3 page 6 2014-07-21

9 Typ. output characteristics (P) 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 2.5 V 3 V 3.5 V 4 V 4.5 V

5 V 10 V

ID [A] VDS [V] 3.5 V 4 V 4.5 V 5 V 10 V 100 150 200 250 300 350 400 0 1 2 3 4 5 RDS(on) [mW] ID [A] -2.5 V -3 V -3.5 V -4 V -4.5 V -5 V -10 V 0 1 2 3 -ID [A] -VDS [V] -3 V -3.5 V -4 V -4.5 V -5 V -10 V 100 150 200 250 300 350 400 0 1 2 3 4 5 RDS(on) [mW] -ID [A] Rev. 2.3 page 7 2014-07-21

13 Typ. transfer characteristics (P) 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | ID| RDS(on)max I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j parameter: T j

15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)

R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V R DS(on)=f(T j); I D=1.4 A; V GS=10 V 25 °C 150 °C 0 1 2 3 4 5 ID [A] VGS [V] 25 °C 150 °C 0 1 2 3 4 5 -ID [A] -VGS [V] typ 98% 100 150 200 250 300 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] typ 98% 100 150 200 250 300 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] Rev. 2.3 page 8 2014-07-21

17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=-11 µA V GS(th)=f(T j); V GS=V DS; I D=3.7 µA 19 Typ. capacitances (P) 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz Ciss Coss Crss 101 102 103 0 10 20 30 C [pF] -VDS [V] Ciss Coss Crss 100 101 102 0 10 20 30 C [pF] VDS [V] typ max min 0.4 0.8 1.2 1.6 2.4 2.8 -60 -20 20 60 100 140 180 -VGS(th) [V] Tj [°C] typ min max 0.4 0.8 1.2 1.6 2.4 2.8 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Rev. 2.3 page 9 2014-07-21

21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N)

I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j

23 Avalanche characteristics (P) 24 Avalanche characteristics (N)

I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 25 °C 100 °C 125 °C 0.1 1 10 100 1000 -IAV [A] tAV [µs] 25 °C 100 °C 125 °C 0.1 1 10 100 1000 IAV [A] tAV [µs] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10-2 10-1 100 101 0 0.5 1 1.5 2 -IF [A] -VSD [V] 25 °C 150 °C 98%, 25 °C 98%, 150°C 10-2 10-1 100 101 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.3 page 10 2014-07-21

25 Typ. gate charge (P) 26 Typ. gate charge (N) V GS=f(Q gate); I D=-1.5 A pulsed V GS=f(Q gate); I D=1.4 A pulsed parameter: V DD parameter: V DD

27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)

V BR(DSS)=f(T j); I D=-250 µA V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 180 -VBR(DSS) [V] Tj [°C] -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] -6 V -15 V -24 V 0 1 2 3 4 5 -VGS [V] -Qgate [nC]

6 V 15 V 24 V

VGS [V] Qgate [nC] Rev. 2.3 page 11 2014-07-21

Package Outline: Footprint: Packaging: Dimensions in mm Note: For symmetric types there is no defined Pin 1 orientation in the reel. TSOP6 Rev. 2.3 page 12 2014-07-21

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 13 2014-07-21