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Technical content

Features

  • N-channel
  • Enhancement mode
  • Logic level (4.5V rated)
  • Avalanche rated
  • dv /dt rated
  • Pb-free lead plating; RoHS compliant
  • Qualified according to AEC Q101
  • Halogen free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 7.1 A T A=70 °C 5.7 Pulsed drain current I D,pulse T A=25 °C 28 Avalanche energy, single pulse E AS I D=7.1 A, R GS=25 W 30 mJ Reverse diode dv /dt dv /dt I D=7.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C 2 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114-HBM 0 (0V to 250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value PG-TSOP-6 Type Package Tape and Reel Information Marking Lead Free Packing BSL302SN PG-TSOP-6 H6327 = 3000 pcs. / reel sPE Yes Non dry 2 3 4 5 6 VDS 30 V RDS(on),max VGS=10 V 25 mW VGS=4.5 V 38 ID 7.1 A Product Summary 2.0 page 1 2014-01-09

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJS - - 50 K/W SMD version, device on PCB R thJA minimal footprint - - 230 6 cm2 cooling area1) - - 62.5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 30 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=30 µA 1.2 1.70 2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 mA V DS=20 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=5.7 A - 27 38 mW V GS=10 V, I D=7.1 A - 18 25 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.1 A 16 - S Values 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) 2.0 page 2 2014-01-09

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 564 750 pF Output capacitance C oss - 202 269 Reverse transfer capacitance Crss - 28 43 Turn-on delay time t d(on) - 6.4 - ns Rise time t r - 2.8 - Turn-off delay time t d(off) - 13.7 - Fall time t f - 1.9 - Gate Charge Characteristics Gate to source charge Q gs - 1.78 2.37 nC Gate to drain charge Q gd - 1.2 1.8 Gate charge total Q g - 4.4 6.6 Gate plateau voltage V plateau - 3.2 - V Reverse Diode Diode continous forward current I S - - 2.5 A Diode pulse current I S,pulse - - 28 Diode forward voltage V SD V GS=0 V, I F=7.1 A, T j=25 °C - 0.8 1.2 V Reverse recovery time t rr - 14.2 ns Reverse recovery charge Q rr - 5.1 - nC V R=15 V, I F=7.1 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=7.1 A, R G,ext=1.6 W V DD=15 V, I D=7.1 A, V GS=0 to 5 V 2.0 page 3 2014-01-09

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-2 10-1 100 101 102 10-3 10-2 10-1 100 101 102 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 10-1 100 101 102 ZthJA [K/W] tp [s] 0.4 0.8 1.2 1.6 0 40 80 120 160 Ptot [W] TA [°C] 0 40 80 120 160 ID [A] TA [°C] 2.0 page 4 2014-01-09

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 3.5 V 3.7 V 4 V 4.5 V 7 V 10 V 0 4 8 12 16 RDS(on) [mW] ID [A] 0 1 2 3 4 5 6 7 8 gfs [S] ID [A] 2.7 V 3 V 3.5 V 3.7 V 4 V 4.5 V 7 V 10 V 0 1 2 3 ID [A] VDS [V] 25 °C 150 °C 0 1 2 3 4 5 ID [A] VGS [V] 2.0 page 5 2014-01-09

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=7.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=30 µA parameter: I D

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 RDS(on) [mW] Tj [°C] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 2.8 -60 -20 20 60 100 140 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 5 10 15 20 C [pF] VDS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10-3 10-2 10-1 100 101 102 0 0.4 0.8 1.2 1.6 IF [A] VSD [V] 2.0 page 6 2014-01-09

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=7.1 A pulsed parameter: T j(start) parameter: V DD

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 VBR(DSS) [V] Tj [°C] 6 V 15 V 24 V 0 2 4 6 8 10 VGS [V] Qgate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-1 100 101 IAV [A] tAV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 2.0 page 7 2014-01-09

Package Outline: Footprint: Packaging: Dimensions in mm TSOP6 2.0 page 8 2014-01-09

81726 Munich, Germany

© 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user 2.0 page 9 2014-01-09