BSL202SN INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • N-channel
  • Enhancement mode
  • Super Logic level (2.5V rated)
  • Avalanche rated
  • dv /dt rated
  • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 7.5 A T A=70 °C 6.0 Pulsed drain current I D,pulse T A=25 °C 30 Avalanche energy, single pulse E AS I D=7.5 A, R GS=25 Ω 30 mJ Reverse diode dv /dt dv /dt I D=7.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±12 V Power dissipation1) P tot T A=25 °C 2W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (0V to 250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value TSOP-6 456 V DS 20 V R DS(on),max V GS=4.5 V 22 mΩ V GS=2.5 V 36 I D 7.5 A Product Summary Type Package Tape and Reel Information Marking Lead Free Packing BSL202SN TSOP-6 L6327: 3000 pcs/ reel sPD Yes Non dry Rev 1.07 page 1 2010-03-26

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJS - - 50 K/W SMD version, device on PCB R thJA minimal footprint - - 230 6 cm2 cooling area1) - - 62.5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA 20 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=30 µA 0.7 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C --1 µA V DS=20 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=5.9 A -2 6 3 6 mΩ V GS=4.5 V, I D=7.5 A -1 7 2 2 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.5 A 25 - S Values 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 1.07 page 2 2010-03-26

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 863 1147 pF Output capacitance C oss - 278 370 Reverse transfer capacitance Crss -4 0 6 0 Turn-on delay time t d(on) - 8.26 - ns Rise time t r - 27.5 - Turn-off delay time t d(off) - 18.9 - Fall time t f - 4.06 - Gate Charge Characteristics Gate to source charge Q gs - 1.82 2.42 nC Gate to drain charge Q gd - 1.1 1.6 Gate charge total Q g - 5.8 8.7 Gate plateau voltage V plateau -2- V Reverse Diode Diode continous forward current I S --2 A Diode pulse current I S,pulse -- 3 0 Diode forward voltage V SD V GS=0 V, I F=7.5 A, T j=25 °C - 0.8 1.2 V Reverse recovery time t rr - 14.7 - ns Reverse recovery charge Q rr - 4.62 - nC V R=10 V, I F=7.5 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=7.5 A, R G=6 Ω V DD=10 V, I D=7.5 A, V GS=0 to 4.5 V Rev 1.07 page 3 2010-03-26

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥4.5 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 10-2 10-1 100 101 102 10-3 10-2 10-1 100 101 102 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 102 101 100 10-1 t p [s] Z thJA [K/W] 0.4 0.8 1.2 1.6 0 40 80 120 160 T A [°C] P tot [W] 0 40 80 120 160 T A [°C] I D [A] Rev 1.07 page 4 2010-03-26

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C

1.8 V 2 V

2.2 V 2.5 V 3 V 3.5 V 4.5 V 6 V 048 1 2 1 6 I D [A] R DS(on) [mΩ] 012345678 I D [A] g fs [S] 1.6 V 1.8 V 2 V 2.2 V 2.4 V 2.5 V 3 V 4.5 V 0123 V DS [V] I D [A] 25 °C 150 °C 0123 V GS [V] I D [A] Rev 1.07 page 5 2010-03-26

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=7.5 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=30 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 T j [°C] R DS(on) [mΩ] typ 98 % 2 % 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 T j [°C] V GS(th) [V] Ciss Coss Crss 101 102 103 104 0 5 10 15 20 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 10-2 10-3 0 0.4 0.8 1.2 1.6 V SD [V] I F [A] Rev 1.07 page 6 2010-03-26

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=7.5 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 T j [°C] V BR(DSS) [V] 4 V 10 V 16 V 0 2 4 6 8 10 12 14 Q gate [nC] V GS [V] 25 °C 100 °C 125 °C 103102101100 101 100 10-1 t AV [µs] I AV [A] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g Rev 1.07 page 7 2010-03-26

Package Outline: Footprint: Packaging: Dimensions in mm TSOP6 GPX09300 1.6±0.1 ±0.12.5 ±0.10.25 1.1 MAX. 0.1 MAX.(2.25) +0.1 -0.050.35 (0.35) 10˚ MAX. 10˚ MAX. 2.9±0.2 B 0.2M B 6x 0.95 1.9 A 0.2 AM 0.15+0.1 -0.06 321 456 0.5 0.95 1.9 2.9 HLG09283 Remark: Wave soldering possible dep. on customers process conditions 2.7 3.15Pin 1 marking CPWG5899 0.2 1.15 Rev 1.07 page 8 2010-03-26

81726 München, Germany

© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.07 page 9 2010-03-26