BSH105

BSH105 KEXIN | Alldatasheet

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www.kexin.com.cn 1 MOSF ET N-Channel MOSFET BSH105 (KSH105) ■ Features

• VDS (V) = 20V
• ID = 1.05 A (VGS = 10V)
• RDS(ON) ＜ 200mΩ (VGS = 4.5V)
• RDS(ON) ＜ 250mΩ (VGS = 2.5V)
• RDS(ON) ＜ 300mΩ (VGS = 1.8V) 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 20 VDGR 20 VGS ±8 Ta=25℃ 1.05 Ta=100℃ 0.67 IDM 4.2 Ta=25℃ 417 Ta=100℃ 170 RthJA 300 ℃/W TJ 150 Tstg -55 to 150 V A Pulsed Drain Current Parameter Continuous Drain Current ID Drain-Source Voltage Gate-Source Voltage Drain-Gate voltage (RGS = 20 KΩ) Junction Temperature Storage Temperature Range PD mW Power Dissipation Thermal Resistance.Junction- to-Ambient D G S

www.kexin.com.cn2 MOSFET N-Channel MOSFET BSH105 (KSH105) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 20 V VDS=16V, VGS=0V 0.1 VDS=16V, VGS=0V, TJ=150℃ 10 Gate-Body Leakage Current IGSS VDS=0V, VGS=±8V ±100 nA VDS=VGS , ID=1mA 0.4 1.2 VDS=VGS , ID=1mA , TJ=150℃ 0.1 VGS=4.5V, ID=0.6A 200 VGS=2.5V, ID=0.6A 250 VGS=2.5V, ID=0.6A TJ=150℃ 375 VGS=1.8V, ID=0.3A 300 Forward transconductance gfs VDS = 16 V; ID = 0.6 A 1.6 S Input Capacitance Ciss 152 Output Capacitance Coss 71 Reverse Transfer Capacitance Crss 33 Total Gate Charge Qg 3.9 Gate Source Charge Qgs 0.4 Gate Drain Charge Qgd 1.4 Turn-On DelayTime td(on) 2 Turn-On Rise Time tr 4.5 Turn-Off DelayTime td(off) 45 Turn-Off Fall Time tf 20 Body Diode Reverse Recovery Time trr 27 Body Diode Reverse Recovery Charge Qrr 19 nC Maximum Body-Diode Continuous Current IS 1.05 Pulsed Reverse Drain Current ISM 4.2 Diode Forward Voltage VSD IS=0.5A,VGS=0V 1 V Zero Gate Voltage Drain Current IDSS uA mΩRDS(On) Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) V ns VGS=8V, VDS=20V, ID=1A,RG=6Ω VGS=0V, VDS=16V, f=1MHz VGS=4.5V, VDS=20V, ID=1A IF= 0.5A, dI/dt= 100A/μs, VGS = 0 V; VR = 16 V A pF nC

www.kexin.com.cn 3 MOSF ET N-Channel MOSFET BSH105 (KSH105) ■ Typical Characterisitics Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ta) Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V Fig.3. Safe operating area. Ta = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Zth j-a = f(t); parameter D = tp/T Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS Normalised Power Dissipation, PD (%) 100 120 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.1 100 1000 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Peak Pulsed Drain Current, IDM (A) single pulse D = 0.5 0.2 0.1 0.05 0.02 tp D = tp/TDP T Normalised Drain Current, ID (%) 100 120 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.5 1.5 2.5 3.5 4.5 0 0.5 1 1.5 2 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 1.1 V 1.5 V 1.3 V 1.7 V 4.5V Tj = 25 C 2.5V VGS = 1.9 V 2.1 V 0.01 0.1 100 0.1 1 10 100 Drain-Source Voltage, VDS (V) Peak Pulsed Drain Current, IDM (A) d.c. 100 ms 10 ms RDS(on) = VDS/ ID tp = 100 us 1 ms 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 Drain Current, ID (A) Drain-Source On Resistance, RDS(on) (Ohms) VGS = 4.5 V 2.5 V 2.1 V1.9 V1.7 V Tj = 25 C 1.5 V

www.kexin.com.cn4 MOSFE T N-Channel MOSFET BSH105 (KSH105) ■ Typical Characterisitics Fig.7. Typical transfer characteristics. ID = f(VGS) Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID) Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 ˚C = f(Tj) Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 0.5 1.5 2.5 0 0.5 1 1.5 2 2.5 3 Gate-Source Voltage, VGS (V) VDS > ID X RDS(on) Tj = 25 C 150 C Drain Current, ID (A) Threshold Voltage, VGS(to), (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 150 Junction Temperature, Tj (C) minimum typical 0.5 1.5 2.5 3.5 0 0.5 1 1.5 2 2.5 3 Drain Current, ID (A) Transconductance, gfs (S) 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 0 0.2 0.4 0.6 0.8 1 Gate-Source Voltage, VGS (V) Drain Current, ID (A) VDS = 5 V Tj = 25 C Normalised Drain-Source On Resistance 0.8 0.9 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 25 50 75 100 125 150 Junction Temperature, Tj (C) VGS = 4.5 V 2.5 V 1.8 V RDS(ON) @ Tj RDS(ON) @ 25C 100 1000 0.1 1 10 100 Drain-Source Voltage, VDS (V) Capacitances, Ciss, Coss, Crss (pF) Ciss Coss Crss

www.kexin.com.cn 5 MOSF ET N-Channel MOSFET BSH105 (KSH105) ■ Typical Characterisitics Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG) Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj 0 2 4 6 8 Gate charge, QG (nC) VDD = 20 V RD = 20 Ohms Tj = 25 C Gate-source voltage, VGS (V) -4.5 -3.5 -2.5 -1.5 -0.5 Drain-Source Voltage, VSDS (V) Source-Drain Diode Current, IF (A) Tj = 25 C 150 C