BSDD05G120E2

BSDD05G120E2 BOURNS | Alldatasheet

Document overview

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Technical content

Features

■ High efficiency with low power loss ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant*, Pb free and halogen free**

Applications

■ Switched-Mode Power Supplies (SMPS) ■ Power Factor Correction (PFC) ■ PV inverters ■ DC-DC converters ■ Telecommunications ■ Motor drives Additional Information Click these links for more information: PRODUCT SELECTOR TECHNICAL LIBRARY INVENTORY SAMPLES CONTACT General Information Bourns® Model BSDD05G120E2 Silicon Carbide (SiC) Schottky Diode provides excellent current carrying capacity. This advanced, high efficiency power component is suitable for applications such as converters requiring a high peak forward surge capability, a very low forward voltage drop, reduced thermal resistance and low power loss. Bourns offers Silicon Carbide Schottky Diodes for rectification applications in assorted styles. The Model BSDD05G120E2 is available in a TO252 (DPAK) package, well-suited for high frequency Switched-Mode Power Supplies. Absolute Maximum Ratings (@ TJ = 25 °C Unless Otherwise Noted) Parameter Symbol BSDD05G120E2 Unit Repetitive Peak Reverse Voltage V RRM 1200 V Average Forward Current (Square Wave Pulse, D = 0.5, Tmb ≤157 °C, Fig. Zth(J-mb)) IF(AV) 5A Repetitive Peak Forward Current (Square Wave Pulse, D = 0.5, Tmb ≤157 °C, tp = 25 μs, Fig. Zth(J-mb)) IFRM 10 A Non-Repetitive Peak Forward Surge Current (10 ms, Single Sine-Wave Pulse) IFSM 45 A Total Power Dissipation P tot 136.3 W Operating Junction Temperature Range T J -55 to +175 °C Storage Temperature T STG -55 to +175 °C Thermal Characteristics Parameter Symbol Condition or Model Min. Typ. Max. Unit Thermal Resistance Junction to Ambient R θ(J-A) In ambient air 60 °C/W Junction to Mounting Base R θ(J-mb) Transient thermal impedance curves 0.85 1.1 Electrical Characteristics (@ TJ = 25 °C Unless Otherwise Noted) Parameter Symbol Condition or Model Min. Typ. Max. Unit Forward Voltage V F IF = 5 A, TJ = 25 °C IF = 5 A, TJ = 175 °C 1.42 2.0 1.6 2.5 V Reverse Leakage Current I R VR = 1200 V, TJ = 25 °C VR = 1200 V, TJ = 175 °C 0.5 300 μA Recovered Charge Q r dIF/dt = 500 A/μs, VR = 400 V, IF = 5 A 11 nC Diode Capacitance C d VR = 1 V, f = 1 MHz 260 pF Capacitance Stored Energy E c VR = 800 V 6.2 μJ *RoHS Directive 2015/863, Mar 31, 2015 and Annex. ** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov SDD05G120E

BSDD05G120E2 Silicon Carbide Schottky Diode Rating and Characteristic Curves (TJ = 25 °C unless otherwise noted) Typical Reverse CharacteristicsTypical Forward Characteristics 01234 Forward Voltage (V) TJ = -55 °C TJ = 0 °C TJ = 25 °C TJ = 100 °C TJ = 150 °C TJ = 175 °C Forward Current (A) 102 10-1 10-2 10-3 10-4 100 300 500 700 900 1100 1200 Reverse Voltage (V) TJ = -55 °C TJ = 0 °C TJ = 25 °C TJ = 100 °C TJ = 150 °C TJ = 175 °C Reverse Leakage Current (µA) Forward Current Derating 02468 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.5 D = 1 Total Power Dissipation (W) 25 75 125 175 Mounting Base Temperature (°C) D = 1 D = 0.5 D = 0.2 D = 0.1 Peak Forward Current (A) Forward Power Dissipation Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.

BSDD05G120E2 Silicon Carbide Schottky Diode Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Rating and Characteristic Curves (Continued) Power Derating 180 150 120 25 50 100 150 75 125 175 Mounting Base Temperature (°C) Total Power Dissipation (W) Rth(J-mb) typ. Rth(J-mb) max. Typical Recovered Charge vs VR 0 100 200 300 400 Reverse Voltage (V) Recovered Charge (nC) Typical Diode Capacitance vs VR 300 250 200 150 100 -1 100 101 102 103 Reverse Voltage (V) Diode Capacitance (pF) Typical Capacitance Stored Energy vs VR 0 200 400 800 1000 600 Reverse Voltage (V) Capacitance Stored Energy (µJ) Ec = ∫0 Vr Cd(V)VdV

BSDD05G120E2 Silicon Carbide Schottky Diode Transient Thermal Impedance, Zth(J-mb), per Diode Pulse Duration (s) 10-6 10-5 10-4 10-3 10-2 10-1 11 0 10-1 10-2 10-3 10-4 Transient Thermal Impedance (°C/W) P T ttp tp T D = D = 0.5 D = 0.1 D = 0.05 D = 0.01 single pulse Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Product Dimensions 2.20 - 2.38 (.087 - .094) 0.47 - 0.60 (.019 - .024) 5.25 (.207) MIN. 4.70 (.185) MIN. 2.285 (.090) TYP. 2.90 (.114) REF. 5.23 - 5.43 (.206 - .214) 6.47 - 6.73 (.255 - .265) 5.98 - 6.22 (.378 - .409) 0.90 - 1.10 (.035 - .043) 0 - 0.10 (0 - .004) 0.71 - 0.89 (.028 - .035) 1.40 - 1.70 (.055 - .067) 0.50 - 1.00 (.020 - .039) 0.72 - 1.10 (.028 - .043) DIMENSIONS: MM (INCHES)

BSDD05G120E2 Silicon Carbide Schottky Diode Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Typical Part Marking SDD05G 120E2 XXXX MANUFACTURER’S TRADEMARK DATE CODE 1ST~3RD CHARACTERS INDICATE INTERNAL PRODUCTION CODE 4TH~5TH CHARACTERS INDICATE YEAR 6TH~7TH CHARACTERS INDICATE WEEK 8TH~9TH CHARACTERS INDICATE INTERNAL SERIAL NO. DEVICE CODE LOT ID Environmental Specifications How to Order B SD D 05 G 120 E 2 Manufacturer B = Bourns Product Type SD = SiC Diodes Package Code D = TO252 Current Rating 05 = 5 A Device Type G = General V F Nominal Voltage 120 = 1200 V Configuration E = Single Diode Version Number Pin Information 32,mb Cathode Anode 1: N.C. (Not Connected) MOUNTING BASE (mb) Recommended Footprint 5.9 (.232) 5.75 (.226) 2.45 (.096) 1.4 (.055) 4.57 (.180) 2.4 (.094) DIMENSIONS: MM (INCHES)

BSDD05G120E2 Silicon Carbide Schottky Diode Packaging Specifications 330 (13) 20.5 (.807) (.512) DIA. DIA. 2.0 ± 0.5 (.079 ± .020) (.630) 0.10 (.004) MAX. THICKNESS EMBOSSED CARRIER COVER TAPE 16.4 (.646) 100 (3.937) 21.2 (.835) (.157) 2.7 (.106) 1.75 (.069) 7.5 (.295) (.630) (.315) (.079) 1.5 (.059) DIA. MIN. DIA.1.5 (.059) USER DIRECTION OF FEED QTY: 2,500 PCS PER REEL DIMENSIONS: MM (INCHES) REV. 08/23 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com

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