BSDB10S65E6

BSDB10S65E6 BOURNS | Alldatasheet

Document overview

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Technical content

Features

■ Low forward voltage drop, high efficiency ■ Low reverse leakage current ■ High peak forward surge current (IFSM) ■ Reduced EMI ■ Maximum operating TJ up to 175 °C ■ Epoxy compound is flame retardant to the UL 94V-0 standard ■ RoHS compliant*, Pb free and halogen free**

Applications

■ Switched-Mode Power Supplies (SMPS) ■ Power Factor Correction (PFC) ■ PV inverters ■ DC-DC converters ■ Telecommunications ■ Motor drives General Information Bourns® Model BSDB10S65E6 Silicon Carbide (SiC) Schottky Diode provides excellent current carrying capacity. This advanced, high efficiency power component is suitable for applications such as converters requiring a high peak forward surge capability, a very low forward voltage drop, reduced thermal resistance and low power loss. Bourns offers Silicon Carbide Schottky Diodes for rectification applications in assorted styles. The Model BSDB10S65E6 is available in a TO263 (D 2PAK) package, well-suited for high frequency Switched-Mode Power Supplies. Additional Information Click these links for more information: PRODUCT SELECTOR TECHNICAL LIBRARY INVENTORY SAMPLES CONTACT Absolute Maximum Ratings (@ TJ = 25 °C Unless Otherwise Noted) Parameter Symbol BSDB10S65E6 Unit Repetitive Peak Reverse Voltage V RRM 650 V Average Forward Current (Square Wave Pulse, D = 0.5, Tmb ≤147 °C, Fig. Zth(J-mb)) IF(AV) 10 A Repetitive Peak Forward Current (Square Wave Pulse, D = 0.5, Tmb ≤147 °C, tp = 25 μs, Fig. Zth(J-mb)) IFRM 20 A Non-Repetitive Peak Forward Surge Current (10 ms, Single Sine-Wave Pulse) IFSM 80 A Total Power Dissipation P tot 125 W Operating Junction Temperature Range T J -55 to +175 °C Storage Temperature T STG -55 to +175 °C Thermal Characteristics Parameter Symbol Condition or Model Min. Typ. Max. Unit Thermal Resistance Junction to Ambient R θ(J-A) In ambient air 60 °C/W Junction to Mounting Base R θ(J-mb) Transient thermal impedance curves 1 1.2 Electrical Characteristics (@ TJ = 25 °C Unless Otherwise Noted) Parameter Symbol Condition or Model Min. Typ. Max. Unit Forward Voltage V F IF = 10 A, TJ = 25 °C IF = 10 A, TJ = 175 °C 1.29 1.5 1.45 1.7 V Reverse Leakage Current I R VR = 650 V, TJ = 25 °C VR = 650 V, TJ = 175 °C 200 μA Recovered Charge Q r dIF/dt = 500 A/μs, VR = 400 V, IF = 10 A 24 nC Diode Capacitance C d VR = 1 V, f = 1 MHz 500 pF Capacitance Stored Energy E c VR = 400 V 5.1 μJ *RoHS Directive 2015/863, Mar 31, 2015 and Annex. ** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov SDB10S65E6

Rating and Characteristic Curves (TJ = 25 °C unless otherwise noted) BSDB10S65E6 Silicon Carbide Schottky Diode Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Typical Reverse CharacteristicsTypical Forward Characteristics Forward Power Dissipation Forward Current Derating Forward Voltage (V) TJ = -55 °C TJ = 0 °C TJ = 25 °C TJ = 100 °C TJ = 150 °C TJ = 175 °C Forward Current (A) 0369 1 2 1 5 Average Forward Current (A) D = 0.1 D = 0.2 D = 0.5 D = 1 Total Power Dissipation (W) 150 120 25 75 125 175 Mounting Base Temperature (°C) D = 1 D = 0.5 D = 0.2 D = 0.1 Peak Forward Current (A) 102 10-1 10-2 10-3 10-4 10-5 150 250 350 450 550 650 Reverse Voltage (V) TJ = -55 °C TJ = 0 °C TJ = 25 °C TJ = 100 °C TJ = 150 °C TJ = 175 °C Reverse Leakage Current (µA)

Rating and Characteristic Curves (Continued) BSDB10S65E6 Silicon Carbide Schottky Diode Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Power Derating Typical Recovered Charge vs VR Typical Diode Capacitance vs VR Typical Capacitance Stored Energy vs VR 180 150 120 25 50 100 150 75 125 175 Mounting Base Temperature (°C) Total Power Dissipation (W) Rth(J-mb) typ. Rth(J-mb) max. 700 600 500 400 300 200 100 -1 100 101 102 103 Reverse Voltage (V) Diode Capacitance (pF) 0 100 200 300 400 500 600 Reverse Voltage (V) Capacitance Stored Energy (µJ) Ec = ∫0 Vr Cd(V)VdV 0 0 100 200 300 400 Reverse Voltage (V) Recovered Charge (nC)

BSDB10S65E6 Silicon Carbide Schottky Diode Product Dimensions 1.22 - 1.40 (.048 - .055) 9.70 - 10.30 (.382 - .406) 1.20 - 1.60 (.047 - .063) 0.60 - 0.90 (.024 - .035) 0.34 - 0.64 (.083 - .114) 14.80 - 15.80 (.583 - .622) 1.05 - 1.45 (.041 - .057) 0 - 0.25 (0 - .010) 4.10 - 4.70 (.161 - .185) 2.20 - 2.79 (.087 - .110) 11.00 (.433) MAX. 6.60 (.260) MIN. 7.80 (.307) MIN. 2.54 (.100) BSC 0.25 (.010) BSC 1.75 (.069) MAX. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. DIMENSIONS: MM (INCHES) Transient Thermal Impedance, Zth(J-mb) Pulse Duration (s) 10-6 10-5 10-4 10-3 10-2 10-1 11 0 10-1 10-2 10-3 Transient Thermal Impedance (°C/W) D = 0.5 D = 0.1 D = 0.05 D = 0.01 single pulse P T ttp tp T D = Recommended Footprint 10.60 (.417) 7.50 (.295) 2.25 (.089) 3.1 (.122) 1.3 (.051) 6.2 (.244) 4.55 (.179) 5.08 (.200) DIMENSIONS: MM (INCHES)

BSDB10S65E6 Silicon Carbide Schottky Diode Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Typical Part Marking Pin Information SDB10S 65E6 XXXX MANUFACTURER’S TRADEMARK DATE CODE 1ST~3RD CHARACTERS INDICATE INTERNAL PRODUCTION CODE 4TH~5TH CHARACTERS INDICATE YEAR 6TH~7TH CHARACTERS INDICATE WEEK 8TH~10TH CHARACTERS INDICATE INTERNAL SERIAL NO. DEVICE CODE LOT ID 32,mb Cathode Anode 1: N.C. (Not Connected) Environmental Specifications How to Order B SD B 10 S 65 E 6 Manufacturer B = Bourns Product Type SD = SiC Diodes Package Code H = TO263 (D 2 PAK) Current Rating 10 = 10 A Device Type S = Low V F Nominal Voltage 65 = 650 V Configuration E = Single Diode Version Number

BSDB10S65E6 Silicon Carbide Schottky Diode Packaging Specifications 330 (13) 20.5 (.807) (.512) DIA. DIA. 2.0 ± 0.5 (.079 ± .020) 0.10 (.004) MAX. THICKNESS EMBOSSED CARRIER COVER TAPE 24.4 (.961) 100 (3.937) 28.4 (1.118) (.157) 5.11 (.201) 1.75 (.069) 11.5 (.453) (.945) (.630) (.079) 1.5 (.059) DIA. MIN. DIA.1.5 (.059) USER DIRECTION OF FEED QTY: 800 PCS PER REEL DIMENSIONS: MM (INCHES) REV. 08/23 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com

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