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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-Transistor,100V BSC040N10NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet 3 2 5 6 7 8 SuperSO8 8 D 7 D 6 D 5 D S 1 S 2 S 3 G 4 1Description

Features

  • OptimizedforhighperformanceSMPS,e.g.sync.rec.
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.0 mΩ ID 100 A Qoss 75 nC QG(0V..10V) 58 nC Type/OrderingCode Package Marking RelatedLinks BSC040N10NS5 PG-TDSON-8 040N10NS - 1) J-STD20 and JESD22

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet TableofContents

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 100 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W1) Pulsed drain current2) ID,pulse - - 400 A TC=25°C Avalanche energy, single pulse3) EAS - - 200 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 139

2.5 W TC=25°C

TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - 0.5 0.9 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=95µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.4 4.0 4.0 5.6 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.3 2.0 Ω - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 4100 5300 pF VGS=0V,VDS=50V,f=1MHz Output capacitance1) Coss - 630 820 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance1) Crss - 28 49 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3.0Ω Rise time tr - 9 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3.0Ω Turn-off delay time td(off) - 32 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3.0Ω Fall time tf - 10 - ns VDD=50V,VGS=10V,ID=50A, RG,ext=3.0Ω 1) Defined by design. Not subject to production test.

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 19 - nC VDD=50V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 11 - nC VDD=50V,ID=50A,VGS=0to10V Gate to drain charge2) Qgd - 12 18 nC VDD=50V,ID=50A,VGS=0to10V Switching charge Qsw - 19 - nC VDD=50V,ID=50A,VGS=0to10V Gate charge total2) Qg - 58 72 nC VDD=50V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.6 - V VDD=50V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 50 - nC VDS=0.1V,VGS=0to10V Output charge2) Qoss - 75 100 nC VDD=50V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 100 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C Reverse recovery time2) trr - 54 108 ns VR=50V,IF=50A,diF/dt=100A/µs Reverse recovery charge2) Qrr - 90 180 nC VR=50V,IF=50A,diF/dt=100A/µs 1) See ″Gate charge waveforms″ for parameter definition 2) Defined by design. Not subject to production test.

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 120 140 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 100 120 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 120 160 200 240 280 320 360 400 7 V 10 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 300 350 400 5 V 5.5 V 6 V 7 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 240 280 320 360 400 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 120 160 gfs=f(ID);Tj=25°C

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=50A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 950 µA 95 µA VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances VDS[V] C[pF] 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 100 101 102 103 25 °C 150 °C 25 °C, max 150 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 20 V 50 V 80 V VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 100 102 104 106 108 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet 6PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm

OptiMOSTM5Power-Transistor,100V BSC040N10NS5 Rev.2.1,2015-01-07Final Data Sheet RevisionHistory BSC040N10NS5 Revision:2015-01-07,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-11-26 Release of final version 2.1 2015-01-07 Update measurement condition for IDSS WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.