BSC037N08NS5T INFINEON | Alldatasheet

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Technical content

Features

  • OptimizedforhighperformanceSMPS,e.g.sync.rec.
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 3.7 mΩ ID 136 A Qoss 56 nC QG(0V..10V) 46 nC Type/OrderingCode Package Marking RelatedLinks BSC037N08NS5T PG-TDSON-8 037N08NT -

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet TableofContents

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 136 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) Pulsed drain current3) ID,pulse - - 544 A TC=25°C Avalanche energy, single pulse4) EAS - - 140 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 136

3.0 W TC=25°C

TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - 0.7 1.1 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=72µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.2 4.4 3.7 5.3 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.3 2.0 Ω - Transconductance gfs 47 94 - S |VDS|>2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 3200 4200 pF VGS=0V,VDS=40V,f=1MHz Output capacitance1) Coss - 530 690 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance1) Crss - 25 44 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 10 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 26 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 7 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 15 - nC VDD=40V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 9.0 - nC VDD=40V,ID=50A,VGS=0to10V Gate to drain charge1) Qgd - 10 15 nC VDD=40V,ID=50A,VGS=0to10V Switching charge Qsw - 16 - nC VDD=40V,ID=50A,VGS=0to10V Gate charge total1) Qg - 46 58 nC VDD=40V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=40V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 40 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 56 74 nC VDD=40V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 124 A TC=25°C Diode pulse current IS,pulse - - 544 A TC=25°C Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C Reverse recovery time1) trr - 41 83 ns VR=40V,IF=50A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 36 72 nC VR=40V,IF=50A,diF/dt=100A/µs 1) Defined by design. Not subject to production test

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 120 140 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 120 140 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 120 160 200 240 280 320 360 400 10 V 8 V 7 V 6 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 300 350 400 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 240 280 320 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 150 200 250 100 125 150 175 200 gfs=f(ID),VDS=3V,Tj=25°C

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 max typ RDS(on)=f(Tj),ID=50A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 720 µA 72 µA VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 100 101 102 103 25 °C 175 °C 175 °C, max 25 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 16 V 40 V 64 V VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet Figure2OutlineFootprint(TDSON-8)

OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Rev.2.2,2020-06-17Final Data Sheet RevisionHistory BSC037N08NS5T Revision:2020-06-17,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-01-22 Release of final version 2.1 2019-03-05 Update Diagrams 8 and 9 2.2 2020-06-17 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.