BSC026N04LS INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • OptimizedforhighperformanceSMPS,e.g.sync.rec.
  • Verylowon-resistanceRDS(on)@VGS=4.5V
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.6 mΩ ID 100 A QOSS 28 nC QG(0V..10V) 32 nC Type/OrderingCode Package Marking RelatedLinks BSC026N04LS PG-TDSON-8 026N04LS - 1) J-STD20 and JESD22

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet TableofContents

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 100 100 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) Pulsed drain current2) ID,pulse - - 400 A TC=25°C Avalanche energy, single pulse3) EAS - - 50 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot

2.5 W TC=25°C

TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - 1.2 2 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 2.1 2.6 2.6 3.6 mΩ VGS=10V,ID=50A VGS=4.5V,ID=50A Gate resistance1) RG - 0.9 1.8 Ω - Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 2300 3220 pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 640 900 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 52 104 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Turn-off delay time td(off) - 37 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=20V,VGS=10V,ID=50A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 6.0 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 3.6 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge1) Qgd - 5.2 7.3 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 7.5 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 32 45 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 16 22 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 13 - nC VDS=0.1V,VGS=0to4.5V Output charge1) Qoss - 28 39 nC VDD=20V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 63 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.86 1 V VGS=0V,IF=50A,Tj=25°C Reverse recovery time1) trr - 24 48 ns VR=20V,IF=50A,diF/dt=400A/µs Reverse recovery charge Qrr - 57 - nC VR=20V,IF=50A,diF/dt=400A/µs 1) Defined by design. Not subject to production test

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 120 160 100 120 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 300 350 400 10 V 5 V 4.5 V 4 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 300 350 400 2.8 V 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 160 240 320 400 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 100 150 200 250 gfs=f(ID);Tj=25°C

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=50A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 250 µA VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 100 101 102 103 25 °C 150 °C 25 ºC, max 150 ºC, max IF=f(VSD);parameter:Tj

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 32 V 20 V 8 V VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet Dimension in mm Figure2OutlineTape(TDSON-8)

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet Figure3OutlineFootprint(TDSON-8)

OptiMOSTMPower-MOSFET,40V BSC026N04LS Rev.2.1,2016-06-09Final Data Sheet RevisionHistory BSC026N04LS Revision:2016-06-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2016-06-09 Update footnotes and max values TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.