BSC025N08LS5 INFINEON | Alldatasheet

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Technical content

Features

  • OptimizedforhighperformanceSMPS,e.g.sync.Rec.
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel,logiclevel
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.5 mΩ ID 187 A Qoss 88 nC QG(0V..4.5V) 44 nC Type/OrderingCode Package Marking RelatedLinks BSC025N08LS5 PG-TDSON-8 025N08LS -

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet TableofContents

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 187 141 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) Pulsed drain current3) ID,pulse - - 748 A TA=25°C Avalanche energy, single pulse4) EAS - - 370 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 156

2.5 W TC=25°C

TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 0.5 0.8 °C/W - Device on PCB, 6 cm² cooling area2) RthJA - - 50 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=115µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 2.1 2.6 2.5 3.3 mΩ VGS=10V,ID=50A VGS=4.5V,ID=25A Gate resistance1) RG - 1.7 2.6 Ω - Transconductance gfs 70 140 - S |VDS|≥2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 5800 7500 pF VGS=0V,VDS=40V,f=1MHz Output capacitance1) Coss - 840 1100 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance1) Crss - 34 60 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 10.4 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 10.3 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 51 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 18.6 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 16 - nC VDD=40V,ID=50A,VGS=0to4.5V Gate charge at threshold Qg(th) - 10 - nC VDD=40V,ID=50A,VGS=0to4.5V Gate to drain charge1) Qgd - 15 22 nC VDD=40V,ID=50A,VGS=0to4.5V Switching charge Qsw - 21 - nC VDD=40V,ID=50A,VGS=0to4.5V Gate charge total1) Qg - 44 55 nC VDD=40V,ID=50A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.8 - V VDD=40V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 80 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 88 117 nC VDS=40V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 110 A TC=25°C Diode pulse current IS,pulse - - 748 A TC=25°C Diode forward voltage VSD - 0.85 1.2 V VGS=0V,IF=50A,Tj=25°C Reverse recovery time1) trr - 44 87 ns VR=40V,IF=50A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 47 93 nC VR=40V,IF=50A,diF/dt=100A/µs 1) Defined by design. Not subject to production test.

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 120 140 160 180 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 120 140 160 100 125 150 175 200 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 120 160 200 240 280 320 360 400 4.5 V 5 V 7 V 10 V 4 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 300 350 400 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 240 280 320 360 400 25 °C 150 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 150 °C 25 °C RDS(on)=f(VGS),ID=50A;parameter:Tj

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 0.0 0.4 0.8 1.2 1.6 2.0 RDS(on)=f(Tj),ID=50A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 1150 µA 115 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 25 °C, max 150 °C 150 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 16 V 40 V 64 V VGS=f(Qgate),ID=40Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-TDSON-8-U08PACKAGE - GROUPNUMBER: LE1L1 cDAb eED1 0.454.055.70 0.900.344.80 0.45 1.200.545.35 0.65 Figure1OutlinePG-TDSON-8,dimensionsinmm

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet Figure2OutlineFootprint(TDSON-8)

OptiMOSTM5Power-Transistor,80V BSC025N08LS5 Rev.2.4,2022-09-22Final Data Sheet RevisionHistory BSC025N08LS5 Revision:2022-09-22,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-10-14 Release of final version 2.1 2016-10-25 Update Rg and EAS 2.2 2019-05-10 Update Diagrams 5, 8, and 9 2.3 2020-12-15 Update current rating and Vsd typ 2.4 2022-09-22 Update outline drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.