BSC010NE2LSI INFINEON | Alldatasheet
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Technical content
Industrial & Multimarket Data Sheet 2.1, 2011-09-08 Final OptiMOS™ BSC010NE2LSI n-Channel Power MOSFET
OptiMOS™ Power-MOSFET BSC010NE2LSI Final Data Sheet 1 2.1, 2011-09-08
1 Description
OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requiremen ts of the sharpened next generation voltage regulation standards in computing applications
Features
- Optimized for high performance Buck converter
- 100% avalanche tested
- Very low on-resistance R DS(on) @ VGS=4.5 V
- Qualified according to JEDEC 1) for target applications
- N-channel
- Pb-free plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- Monolithic integrated Schottky like diode
Applications
- On board power for server
- Power managment for high performance computing
- Synchronous rectification
- High power density point of load converters 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 25 V IFX OptiMOS webpage RDS(on),max 1.05 m Ω IFX OptiMOS product brief ID 100 A IFX OptiMOS spice models QOSS 38 nC nC IFX Design tools Qg.typ 59 Type Package Marking BSC010NE2LSI PG-TDSON-8 010NE2LI
OptiMOS™ Power-MOSFET BSC010NE2LSI Final Data Sheet 2 2.1, 2011-09-08
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current ID -- 1 0 0 A VGS=10 V, TC=25 °C -- 1 0 0 VGS=10 V, TC=100 °C -- 1 0 0 VGS=4.5 V, TC=25 °C -- 1 0 0 VGS=4.5 V, TC=100 °C -- 3 8 VGS=10 V, TA=25 °C, RthJA=50 K/W1)) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Pulsed drain current2) 2) See figure 3 for more detailed information ID,pulse -- 4 0 0 TC=25 °C Avalanche current, single pulse3) 3) See figure 13 for mo re detailed information IAS -- 5 0 Avalanche energy, single pulse EAS -- 1 0 0 m J ID=50 A,RGS=25 Ω Gate source voltage VGS -20 - 20 V Power dissipation Ptot -- 9 6 W TC=25 °C -- 2 . 5 TA=25 °C, RthJA=50 K/W1)) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1 55 150 56 Ncm Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 1 . 3 K / W -- 2 0 t o p Device on PCB RthJA -- 5 0 6 c m 2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air
OptiMOS™ Power-MOSFET BSC010NE2LSI
Electrical characteristics
Final Data Sheet 3 2.1, 2011-09-08
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0 V, ID=1.mA Breakdown voltage temperature coefficien dV(BR)DSS /dTj -1 5 - m V / K ID=10 mA, referenced to 25°C Gate threshold voltage VGS(th) 1.2 - 2 VDS=VGS, ID=250 µA Zero gate voltage drain current IDSS -- 0 . 5 m A VDS=20 V, VGS=0 V, Tj=25 °C -3- VDS=20 V, VGS=0 V, Tj=125 °C Gate-source leakage current IGSS - 10 100 nA VGS=20V, VDS=0 V Drain-source on-state resistance RDS(on) -1 . 1 1 . 4 m Ω VGS=4.5 V, ID=30A, - 0.9 1.05 VGS=10 V, ID=30 A, Gate resistance RG -0 . 6 - Ω Transconductance gfs 80 160 - S | VDS|>2|ID|RDS(on)max, ID=30 A Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss -4 2 0 0 - p F VGS=0 V, VDS=12 V, f=1 MHzOutput capacitance Coss -1 8 0 0 - Reverse transfer capacitance Crss -1 8 0 - Turn-on delay time td(on) -6 . 3 - n s VDD=12 V, VGS=10V, ID=30 A, RG=1 . 6 ΩRise time tr -6 . 2 - Turn-off delay time td(off) -3 2 - Fall time tf -4 . 6 -
OptiMOS™ Power-MOSFET BSC010NE2LSI Final Data Sheet 4 2.1, 2011-09-08 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -1 0 - n C VDD=12 V, ID=30 A, VGS=0 to 4.5 V Gate charge at threshold Qg(th) -6 . 7 - Gate to drain charge Qgd -6 . 9 - Switching charge Qsw -1 0 - Gate charge total Qg -2 9 - Gate plateau voltage Vplateau -2 . 4 - V Gate charge total Qg -5 9 - n C VDD=12 V, ID=30 A, VGS=0 to 10V Gate charge total, sync. FET Qg(sync) -2 5 - VDS=0.1 V, VGS=0 to 4.5 V Output charge Qoss -3 8 - VDD=12 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode continuous forward current Is -- 9 6 A TC=25 °C Diode pulse current IS,pulse -- 4 0 0 Diode forward voltage VSD -0 . 5 6 0 . 7 V VGS=0 V, IF=12 A, Tj=25 °C Reverse recovery charge Qrr -5- n C VR=15 V, IF=Is, diF/dt=400 A/µs
OptiMOS™ Power-MOSFET BSC010NE2LSI Electrical characteristics diagrams Final Data Sheet 5 2.1, 2011-09-08
5 Electrical characteristics diagrams
1 Power dissipation 2 Drain current
Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T
OptiMOS™ Power-MOSFET BSC010NE2LSI Electrical characteristics diagrams Final Data Sheet 6 2.1, 2011-09-08 Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
OptiMOS™ Power-MOSFET BSC010NE2LSI Electrical characteristics diagrams Final Data Sheet 7 2.1, 2011-09-08 Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj
OptiMOS™ Power-MOSFET BSC010NE2LSI Electrical characteristics diagrams Final Data Sheet 8 2.1, 2011-09-08 Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15 15 Typ. drain-source leakage current 16 Gate charge waveforms IDSS=f(VDS); VGS=0 V
OptiMOS™ Power-MOSFET BSC010NE2LSI Package outline Final Data Sheet 9 2.1, 2011-09-08
6 Package outline
Figure 1 Outlines PG-TDSON-8, dimensions in mm/inches
OptiMOS™ Power-MOSFET BSC010NE2LSI Package outline Final Data Sheet 10 2.1, 2011-09-08 Figure 2 Outlines PG-TDSON-8 tape, dimension in mm/inches
OptiMOS™ Power-MOSFET BSC010NE2LSI
Revision History
Final Data Sheet 11 2.1, 2011-09-08
7 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-09-08 Published by Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-suppo rt devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2011-09-08, 2.1 Previous Revision: Revision Subjects (major ch anges since last revision)