BSC009NE2LS5 INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 DataSheet Rev.2.0 Final PowerManagement&Multimarket

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet 3 2 5 6 7 8 SuperSO8 8 D 7 D 6 D 5 D S 1 S 2 S 3 G 4 1Description

Features

  • Optimizedforhighperformancebuckconverters
  • Verylowon-resistanceRDS(on)@VGS=4.5V
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 0.9 mΩ ID 100 A QOSS 28 nC QG(0V..4.5V) 20 nC Type/OrderingCode Package Marking RelatedLinks BSC009NE2LS5 PG-TDSON-8 09NE2LS5 - 1) J-STD20 and JESD22

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet TableofContents

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 100 100 100 100 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) Pulsed drain current2) ID,pulse - - 400 A TC=25°C Avalanche current, single pulse3) IAS - - 50 A TC=25°C Avalanche energy, single pulse EAS - - 90 mJ ID=50A,RGS=25Ω Gate source voltage VGS -16 - 16 V - Power dissipation Ptot

2.5 W TC=25°C

TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - - 1.7 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=16V,VDS=0V Drain-source on-state resistance RDS(on) 0.95 0.75 1.25 0.9 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG - 1 1.7 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=30A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 2900 3900 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 1400 1900 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 130 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 30 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 6.7 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 4.6 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 4.9 - nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 7.0 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 20 28 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 43 57 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 18 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 28 - nC VDD=12V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 74 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.78 1 V VGS=0V,IF=30A,Tj=25°C Reverse recovery charge Qrr - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 120 160 100 120 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 200 300 400 500 600 700 800 4 V 4.5 V 5 V 10 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 0.0 0.4 0.8 1.2 1.6 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 160 240 320 400 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 200 300 400 200 400 600 800 1000 gfs=f(ID);Tj=25°C

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 typ RDS(on)=f(Tj);ID=30A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 250 µA VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 100 101 102 103 25 °C 150 °C IF=f(VSD);parameter:Tj

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 20 V 12 V 5 V VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet 6PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet Dimension in mm Figure2OutlineTDSON-8Tape

OptiMOSTM5Power-MOSFET,25V BSC009NE2LS5 Rev.2.0,2015-03-10Final Data Sheet RevisionHistory BSC009NE2LS5 Revision:2015-03-10,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-03-10 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.