BSB150N15NZ3 INFINEON | Alldatasheet
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Technical content
Industrial & Multimarket Data Sheet 2.3, 2011-03-01 Final OptiMOS™ BSB150N15NZ3 n-Channel Power MOSFET
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Final Data Sheet 1 2.3, 2011-03-01
1 Description
OptiMOS™150V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 150V the best choice for the demandin g requirements of voltage regulator solutions in Solar, Drives, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ produc ts are available in high performance packages to tackle your most challenging applicatio ns giving full flexibility in optimizing space- efficiency and cost.
Features
- Optimized for high switchin g frequency DC/DC converter
- Excellent gate charge x R DS(on) product (FOM)
- Qualified according to JEDEC 1) for target applications
- Pb-free plating; RoHS compliant
- Very low on-resistance R DS(on)
- Low profile (<0.7 mm)
- Low parasitic inductance
- Double sided cooling
- Compatible with DirectFET® package MZ footprint and outline
- 1 0 0 % R g T e s t e d
Applications
- Synchronous rectification
- Primary side switches
- Power managment for high performance computing
- High power density point of load converters 1) J-STD20 and JESD22 2) DirectFET ® is a trademark of International Rectifier Corporation. BSB150N15NZ G uses DirectFET® technology licensed from International Rectifier Corporation. Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 150 V IFX OptiMOS webpage RDS(on),max 15 m Ω IFX OptiMOS product brief ID 48 A IFX OptiMOS spice models QOSS 71 nC IFX Design tools Qg.typ 28 Type Package Marking BSB150N15NZ3 G MG-WDSON-2 0115
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Final Data Sheet 2 2.3, 2011-03-01
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current ID -- 4 8 A VGS=10 V, TC=25 °C
30 VGS=10 V, TC=100 °C
9 VGS=10 V, TA=25 °C,
RthJA=45 K/W1)) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Pulsed drain current2) 2) See figure 3 for more detailed information ID,pulse -- 1 9 2 TC=25 °C Avalanche energy, single pulse EAS -- 4 4 0 m J ID=30 A,RGS=25 Ω Gate source voltage VGS -20 - 20 V Power dissipation Ptot -- 7 8 W TC=25 °C
2.8 TA=25 °C, RthJA=451) K/W
Operating and storage temperature Tj,Tstg -40 - 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 1.6 K/W top 1b o t t o m Device on PCB RthJA -- 4 5 6 c m 2 cooling area1) 1) Device on 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one la yer, 70µm thick) copper area for drain connection. PCB is vertical in still air.
OptiMOS™ Power-MOSFET BSB150N15NZ3 G
Electrical characteristics
Final Data Sheet 3 2.3, 2011-03-01
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0 V, ID=1mA Gate threshold voltage VGS(th) 23 4 VDS=VGS, ID=110 µA Zero gate voltage drain current IDSS -0 . 1 1 0 µ A VDS=120 V, VGS=0 V, Tj=25 °C - 10 100 VDS=120 V, VGS=0 V, Tj=125 °C Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) -1 2 . 5 1 5 m Ω VGS=10V, ID=30A 13 17 VGS=8V, ID=15A Gate resistance RG -0 . 7 - Ω Transconductance gfs 25 50 S | VDS|>2|ID|RDS(on)max, ID=30 A Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 2100 2800 pF VGS=0 V, VDS=75 V, f=1 MHzOutput capacitance Coss - 250 330 Reverse transfer capacitance Crss -5- Turn-on delay time td(on) -1 0 - n s VDD=75V, VGS=10 V, ID=30 A, RG=1 . 6 ΩRise time tr -1 0 - Turn-off delay time td(off) -1 7 - Fall time tf -7-
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Final Data Sheet 4 2.3, 2011-03-01 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -1 1 - n C VDD=75V, ID=30 A, VGS=0 to 10V Gate to drain charge Qgd 4.4 Switching charge Qsw -1 2 - Gate charge total Qg -2 8 3 7 Gate plateau voltage Vplateau -5 . 2 - Output charge Qoss -7 1 9 4 VDD=75 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode continuous forward current Is 48 A TC=25 °C Diode pulse current IS,pulse 192 Diode forward voltage VSD -0 . 9 1 . 2 V VGS=0 V, IF=48 A, Tj=25 °C Reverse recovery time trr -1 1 0 - n C VR=75 V, IF=30A, diF/dt=100 A/µsQrr 337
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Electrical characteristics diagrams Final Data Sheet 5 2.3, 2011-03-01
5 Electrical characteristics diagrams
1 Power dissipation 2 Drain current
Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Electrical characteristics diagrams Final Data Sheet 6 2.3, 2011-03-01 Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Electrical characteristics diagrams Final Data Sheet 7 2.3, 2011-03-01 Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Electrical characteristics diagrams Final Data Sheet 8 2.3, 2011-03-01 Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Package outlines Final Data Sheet 9 2.3, 2011-03-01
6 Package outlines
Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Package outlines Final Data Sheet 10 2.3, 2011-03-01
7 Package outlines
Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET BSB150N15NZ3 G Package outlines Final Data Sheet 11 2.3, 2011-03-01
8 Package outlines
Figure 3 Outlines MG-WDSON-2, dimensions in mm/inches
OptiMOS™ Power-MOSFET BSB150N15NZ3 G
Revision History
Final Data Sheet 9 2.3, 2011-03-01
6 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-03-01 Published by Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. Life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.. Revision History: 2011-03-01, 2.3 Previous Revision: Revision Subjects (major ch anges since last revision)